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Clean energy 2023年第4期7卷 873-884页

作者： R Raja Nivedha Jai Govind Singh Weerakorn Ongsakul Department of energy Environment and Climate ChangeAsian Institute of TechnologyThailand

energy access,climate change and public health issues are some major drivers for the need for renewable sources.However,most renewable sources,excluding large hydro,have zero or negligible rotational inertia,which is critical to stabilizing the power system after contingency.Therefore,this paper proposes a droop-based inertia emulator to reduce the rate of change of frequency and frequency deviations.The robustness of the controller is analysed by applying various uncertainties and disturbances of power system components that were carried out using DIgSILENT PowerFactory simulations.The obtained results are compared with existing literature and the desired performance shows an improvement in the rate of change of frequency of 34.78%for an IEEE 6-bus system,24.32%for a 12-bus system and 18%for a 39-bus system.

关键词： control of the rate of change of frequency low-inertia power system inertia emulator control rate of change of frequency impact of solar PV on frequency control impact of battery storage on inertia and frequency control

Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p-n junction in solar cell

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Journal of Semiconductors 2009年第7期30卷 67-69页

作者：张陆成沈辉 Institute for Solar Energy Systems Sun Yat-Sen University

Shunt can drastically decrease the solar cell conversion efficiency and its current measurement result only reflects the overall shunting effect of all shunts in a whole cell.In order to accurately characterize local shunts caused by the penetration of front contacts through the emitter junction, silicon solar cells with a new structure named beam bridge contact were fabricated.The result showed that the region under the emitter was more badly shunted than the other emitter regions.The sample preparation process was completely compatible with the industrial silicon fabrication sequence, which was of great convenience.The measurement results give informations on the solar cell structure, material ingredients, and process parameters.

关键词： solar cell shunt resistance measurement

Lessons learned from the underrepresentation of women in STEM: AI-enabled solutions and more

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能源与人工智能(英文)

能源与人工智能(英文) 2021年第3期5卷 375-378页

作者： Waad Abuwatfa Nada Zamel Amani Al-Othman Department of Chemical Engineering American University of SharjahSharjahUAE Fraunhofer Institute for Solar Energy Systems ISEFreiburgGermany

The participation of women science,technology,engineering and mathematics(STEM)and energy fields is essential in advancing knowl-edge,securing economic growth,promoting prosperity and contribut-ing to the well-being of societies.Although the number of women in-volved in STEM fields has recently witnessed an increase in compar-ison to their natural counterparts,the“leaky pipeline”metaphor still applies.A greater number of women“leak out”and leave the educa-tional and professional pipelines at every stage of their lives,transition-ing from school to university to their careers,than men[1].The epitome of gender differences in the fields of STEM and energy industry can be captured by the disparities in representation of women in publications,salaries,senior rankings,annual productivity and resources allocation[2].

关键词： learned senior publications

Generation Mechanism of Inhomogeneous Minority Carrier Lifetime Distribution in High Quality mc-Si Wafers and the Impacts on Electrical Performance of Wafers and solar Cells

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Journal of Materials Science & Technology 2015年第11期31卷 1094-1100页

作者： Xianxin Liu Genghua Yan Ruijiang Hong Institute for Solar Energy Systems Guangdong Provincial Key Laboratory of Photovoltaic Technology Sun Yat-sen University

To find out the causation of inhomogeneous minority carrier lifetime distribution in high quality multicrystalline silicon （mc-Si） wafers, impurities and lattice defects were systematically studied by means of Fourier transform infrared （FTIR） spectroscopy and metallography, Inhomogeneously distributed oxygen impurity and dislocations were demonstrated to be key leading factors, and the restriction mechanism was discussed. Scattering process caused by ionized impurities and dislocations decreased carrier mobility, while carrier concentration was not significantly affected. Measurements showed that resistivity was higher and more dispersive in low lifetime area. solar cells were fabricated with these wafers. Cells＇ efficiency of inhomogeneous ones exhibited averagely 0.27% lower than the regular ones in absolute terms. Recombination centers and leakage loss induced by dislocations and impurities led to the reduction in shunt resistors and open-circuit voltage, and then affected the performance of cells.

关键词： mc-Si wafers Minority carrier lifetime Oxygen impurity Dislocation

Study of large area hydrogenated microcrystalline silicon p-layers for back surface field in crystalline silicon solar cells

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Science China(Technological Sciences) 2011年第1期54卷 63-69页

作者： BAN Qun Martin HANKER Dietmar BORCHERT SHEN Hui institute for solar energy System Sun Yat-sen University Guangzhou 510006 China Fraunhofer Institute for Solar Energy Systems Laboratory and Service Center Gelsenkirchen 45884 Germany

A series of hydrogenated microcrystalline silicon (μc-Si:H) p-layers for back surface field in crystalline silicon solar cells were deposited on glass substrates by the developed large area (45 cm×45 cm) plasma enhanced chemical vapour deposition processor operating at 13.56 MHz and various values of source gas trimethylboron (TMB) to H2 flowratio. The influence of deposition parameters on the large area p-layer performance was intensively studied,as well as the thin film uniformity,optical,electrical and structural performances by Raman,FTIR,Ellipsometry,etc. Arrhenius and Tauc plots were used to discuss the μc-Si:H thin film’s activation energy and the defects state distribution. When amorphous-microcrystalline transition state was obtained,the deposited p-doped μc-Si:H layers showed specific resistance of 38.3 Ω-1cm-1 at the flowratio of 0.66% and high crystallinity of 45%–50% with no further treatment. The effect of source gas flowratio,deposition rate,and source gas partial pressure on μc-Si:H thin film’s performance was also investigated.

关键词：晶体硅太阳能电池微晶硅等离子增强化学气相沉积面积背面氢化性能参数 Raman

Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength

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Journal of Semiconductors 2011年第12期32卷 48-52页

作者：段春艳刘超艾斌赖键钧邓幼俊沈辉 State Key Laboratory of Optoelectronic Materials and Technologies Institute for Solar Energy SystemsSun Yat-sen University

Selected area laser-crystallized polycrystalline silicon （p-Si） thin films were prepared by the third harmonics （355 nm wavelength） generated by a solid-state pulsed Nd：YAG laser. Surface morphologies of 400 nm thick films after laser irradiation were analyzed. Raman spectra show that film crystallinity is improved with in- crease of laser energy. The optimum laser energy density is sensitive to the film thickness. The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ/cm^2 for 300 nm thick films and between 777-993 mJ/cm^2 for 400 nm thick films. The optimized laser energy density is 634, 975 and 1571 mJ/cm^2 for 300, 400 and 500 nm thick films, respectively.

关键词： polycrystalline silicon thin films Nd：YAG laser laser crystallization

Determination of the specific shunt resistances under and away from the front contacts of solar cell

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Science China(Technological Sciences) 2009年第10期52卷 3082-3084页

作者： ZHANG LuCheng SHEN Hui Institute for Solar Energy Systems Sun Yat-sen UniversityGuangzhou 510006China

New structure of front contacts was devised and fabricated for accurately measuring the resistances under and away from the front contacts of silicon solar cell with the results showing that the former was much worse. The sample preparing sequence was completely compatible with the conventional solar cell manufacturing process, which demonstrated the convenience of this approach. With the aid of this characterization technique, detailed information can be obtained on the solar cell structure, material ingredients and process parameters, especially the sintering process.

关键词： silicon solar cell contact shunt characterization

Effects of substrate characteristics on the passivation performance of ALD-Al_2O_3 thin film for high-efficiency solar cells

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Journal of Semiconductors 2014年第5期35卷 26-31页

作者：梁宗存王殿磊朱彦斌 School of Physics and Engineering Institute for Solar Energy Systems State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat-Sen University

Atom layer deposition （ALD）-Al2O3 thin films are considered effective passivation layers for p-type silicon surfaces. A lower surface recombination rate was obtained through optimizing the deposition parameters. The effects of some of the basic substrate characteristics including material type, bulk resistivity and surface morphology on the passivation performance of ALD-Al2O3 are evaluated in this paper. Surface recombination velocities of 7.8 cm/s and 6.5 cm/s were obtained for p-type and n-type wafers without emitters, respectively. Substrates with bulk resistivity ranging from 1.5 to 4 Ω · cm were all great for such passivation films, and a higher implied Voc of 660 mV on the 3 Ω · cm substrate was achieved. A minority carrier lifetime （MCL） of nearly 10 μs higher was obtained for cells with a polished back surface compared to those with a textured surface, which indicates the necessity of the polishing process for high-efficiency solar cells. For n-type semi-finished solar cells, a lower effective front surface recombination velocity of 31.8 cm/s was acquired, implying the great potential of （ALD）-Al2O3 thin films for high-efficiency n-type solar cells.

关键词： atom layer deposition （ALD）-Al2O3 passivation minority carrier lifetime surface recombinationvelocity solar cell

Simulation and experiment of a photovoltaic—air source heat pump system with thermal energy storage for heating and domestic hot water supply

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Building Simulation 2023年第10期16卷 1897-1913页

作者： Junyu Da Ming Li Guoliang Li Yunfeng Wang Ying Zhang solar energy Research institute Yunnan Normal UniversityNo.768Juxian StreetChenggong districtKunmingYunnan650500China

For China,the development of low-energy buildings is one of the necessary routes for achieving carbon neutrality.Combining photovoltaic(PV)with air source heat pump(ASHP)yields a great potential in providing heating and domestic hot water(DHW)supply in non-central heating areas.However,the diurnal and seasonal inconsistencies between solar availability and building heat load can severely affect the efficacy of solar energy systems.This study creates and numerically simulates a PV-ASHP system with thermal energy storage(TES)in transient system simulation software,TRNSYS.Experimental studies are conducted to validate the simulation model.The system’s yearly operational characteristics are simulated to reveal the energy conversion relationship between the system’s thermoelectric storage and heating and DHW demand.The results show that the synergy between heating and DHW simultaneously improves the direct utilization of solar energy compared to single heating.The yearly self-consumption and self-satisfaction rates of PV and the COP of the ASHP increase by 131.25%,10.53%and 9.56%,respectively.solar energy contributes 55.54%to the system,with a PV capacity of 82 W per square meter of building area.This study provides fresh approaches to developing flexible building-integrated PV-ASHP technologies and balance of the energy exchange among the PV,building load and TES.

关键词： PV-ASHP TRNSYS heating and DHW thermal energy storage simulation and experiment

Analysis of each branch current of serial solar cells by using an equivalent circuit model

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Chinese Physics B 2014年第2期23卷 597-603页

作者：易施光张万辉艾斌宋经纬沈辉 Institute for Solar Energy Systems State Key Laboratory of Optoelectronic Materials and TechnologiesSchool of Physics and EngineeringSun Yat-Sen University Guangdong Testing institute of Product Quality Supervision

In this paper, based on the equivalent single diode circuit model of the solar cell, an equivalent circuit diagram for two serial solar cells is drawn. Its equations of current and voltage are derived from Kirchhoff＇s current and voltage law. First, parameters are obtained from the I-V （current-voltage） curves for typical monocrystalline silicon solar cells （125 mmx 125 mm）. Then, by regarding photo-generated current, shunt resistance, serial resistance of the first solar cell, and resistance load as the variables. The properties of shunt currents （Ishl and Ish2）, diode currents （/D1 and/]：）2）, and load current （IL） for the whole two serial solar cells are numerically analyzed in these four cases for the first time, and the corresponding physical explanations are made. We find that these parameters have different influences on the internal currents of solar cells. Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module.

关键词： solar cell equivalent circuit current property