Study of large area hydrogenated microcrystalline silicon p-layers for back surface field in crystalline silicon solar cells

作     者：BAN Qun Martin HANKER Dietmar BORCHERT SHEN Hui 

作者机构：Institute for Solar Energy System Sun Yat-sen University Guangzhou 510006 China Fraunhofer Institute for Solar Energy Systems Laboratory and Service Center Gelsenkirchen 45884 Germany 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2011年第54卷第1期

页      面：63-69页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National "863" Project of China (Grant No.2006AA05Z409) the "Kaisi" Oversea R&D Schol-arship of Sun Yat-sen University 

主　　题：μc-Si:H flowratio uniformity band structure 

摘      要：A series of hydrogenated microcrystalline silicon （μc-Si：H） p-layers for back surface field in crystalline silicon solar cells were deposited on glass substrates by the developed large area （45 cm×45 cm） plasma enhanced chemical vapour deposition processor operating at 13.56 MHz and various values of source gas trimethylboron （TMB） to H2 flowratio. The influence of deposition parameters on the large area p-layer performance was intensively studied, as well as the thin film uniformity, optical, electrical and structural performances by Raman, PTIR, Ellipsometry, etc. Arrhenius and Tauc plots were used to discuss the μc-Si：H thin film＇s activation energy and the defects state distribution. When amorphous-microcrystalline transition state was obtained, the deposited p-doped μc-Si：H layers showed specific resistance of 38.3 Ω^-1cm1 at the flowratio of 0.66% and high crystallinity of 45%-50% with no further treatment. The effect of source gas flowratio, deposition rate, and source gas partial pressure on μc-Si：H thin film＇s performance was also investigated.