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Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory

Science China(Information Sciences) 2024年第6期67卷 190-197页

作者： Zheng BIAN Feng TIAN Zongwen LI Xiangwei SU Tianjiao ZHANG Jialei MIAO Bin YU Yang XU Yuda ZHAO College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation CentreZhejiang University

Optical memory integrates the function of optical sensing in memory devices, remarkably promoting the interconnection between sensory and memory terminals. Silicon charge-coupled photodetectors and floating gate memory have been widely used in imaging and storage technologies, respectively. However,the heterogeneous integration of the two devices requires technological innovation and complex electrical connections. In this work, we adopt a three-dimensional layer stacking method to design a novel optical memory device. On the top of Si charge-coupled photodetectors, we successively deposit two-dimensional graphene,hexagonal boron nitride, and molybdenum disulfide as a floating gate layer, a tunneling layer, and a readout layer, respectively. By applying a gate bias on lightly doped Si, a deep depletion layer is formed with a high voltage potential drop. Under dark conditions, the depletion layer cannot be filled, and the electric field across the h-BN tunnel barrier is relatively small. Under light irradiation, the deep depletion layer is gradually filled, and the h-BN tunneling layer withstands the increasing electric field, resulting in charge storage in the floating gate layer. Based on this mechanism, the device exhibits a gate voltage-dependent operation mode, including an integrated optical sensing-memory mode and an electrically driven storage mode. Under moderate gate voltage, the device can effectively detect the optical information with varied intensity and store the optical information in the floating gate, displaying optically controlled memory characteristics. Our work demonstrates a compact device structure for optical memory and displays excellent optically controlled memory performance, which can be applied in artificial vision systems.

关键词： heterogeneous integration charge-coupled device floating gate optical memory molybdenum disulfide lightly doped silicon

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High-temperature-tolerant flexible supercapacitors: Gel polymer electrolytes and electrode materials

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Journal of Energy Chemistry 2025年第1期100卷 426-457页

作者： Chong Peng Xinyi Huang Mingwei Zhao Shuling Liao Quanhong Yang Nianjun Yang Siyu Yu School of Chemistry & Chemical Engineering Southwest University Nanoyang Group Tianjin Key Laboratory of Advanced Carbon and Electrochemical Energy Storage School of Chemical Engineering and Technology and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin University Department of Chemistry & IMO-IMOMEC Hasselt University

The development of flexible supercapacitors(FSCs) capable of operating at high temperatures is crucial for expanding the application areas and operating conditions of supercapacitors. Gel polymer electrolytes and electrode materials stand as two key components that significantly impact the efficacy of hightemperature-tolerant FSCs(HT-FSCs). They should not only exhibit high electrochemical performance and excellent flexibility, but also withstand intense thermal stress. Considerable efforts have been devoted to enhancing their thermal stability while maintaining high electrochemical and mechanical performance. In this review, the fundamentals of HT-FSCs are outlined. A comprehensive overview of state-of-the-art progress and achievements in HT-FSCs, with a focus on thermally stable gel polymer electrolytes and electrode materials is provided. Finally, challenges and future perspectives regarding HT-FSCs are discussed, alongside strategies for elevating operational temperatures and *** review offers both theoretical foundations and practical guidelines for designing and manufacturing HT-FSCs, further promoting their widespread adoption across diverse fields.

关键词： Flexible supercapacitors High-temperature tolerance Gel polymer electrolytes Electrode materials

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Saturation thickness of stacked SiO_(2)in atomic-layer-deposited Al_(2)O_(3)gate on 4H-SiC

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Chinese Physics B 2023年第8期32卷 397-403页

作者：邵泽伟徐弘毅王珩宇任娜盛况 College of Electrical Engineering Zhejiang UniversityHangzhou 310063China Hangzhou Global scientific and technological innovation center Zhejiang UniversityHangzhou 311215China

High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction ***,under identical conditions of gate oxide thickness and gate voltage,the high-k dielectric enables a greater charge accumulation in the channel region,resulting in a larger number of free electrons available for ***,the lower energy band gap of high-k materials leads to significant leakage currents at the interface with Si C,which greatly affects device *** inserting a layer of SiO_(2)between the high-k material and Si C,the interfacial barrier can be effectively widened and hence the leakage current will be *** this study,the optimal thickness of the intercalated SiO_(2)was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al_(2)O_(3)layer and thermally nitride SiO_(2).Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al_(2)O_(3)stacked on 1 nm,2 nm,3 nm,6 nm,or 9 nm thick nitride SiO_(2).Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric ***,a saturation thickness of stacked SiO_(2)that contributed to dielectric breakdown and interfacial band offsets was *** findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.

关键词： 4H-SiC SiO_(2)/Al_(2)O_(3)stacks saturation thickness dielectric breakdown

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Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning

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Science China(Information Sciences) 2021年第6期64卷 188-195页

作者： Yayao LI Yue WANG Lei YIN Wen HUANG Wenbing PENG Yiyue ZHU Kun WANG Deren YANG Xiaodong PI State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang University Advanced Semiconductor Research Institute ZJU-Hangzhou Global Scientific and Technological Innovation Center

With advances in Si-based technology infrastructures and the rapid integration of Si-based optoelectronics, Si-based optoelectronic synaptic devices have the potential to greatly facilitate the large-scale deployment of neuromorphic computing. The incorporation of solution-processable polymer semiconductors into Si-based optoelectronics may enable the cost-effective fabrication of optoelectronic synaptic ***(3-hexylthiophene)(P3HT) is a semiconducting polymer used to manufacture optoelectronic synaptic transistors with P3HT channels and Si gates. The gate dielectric between them consists of a *** inorganic-organic Si/P3HT optoelectronic synaptic transistors can mimic synapses when exposed to optical and electrical stimuli. The Si/P3HT synaptic devices can spatiotemporally integrate optical and electrical stimuli to mimic cross-modal learning.

关键词： poly(3-hexylthiophene) silicon optoelectronic synaptic devices cross-modal learning transistor

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W-doped In_(2)O_(3) nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

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Chinese Physics B 2023年第11期32卷 604-608页

作者：杨洋傅传玉柯硕崔航源方晓万昌锦万青 School of Electronic Science&Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China School of Micro-Nano Electronics Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou 310027China

Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper,neuromorphic transistors with W-doped In_(2)O_(3)nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current(EPSC), long-term potentiation(LTP), and depression(LTD). Moreover, the synaptic plasticity of the nanofiber transistor can be synergistically modulated by light pulse and electrical *** last, pulsed light learning and pulsed electrical forgetting behaviors were emulated in 5×5 nanofiber device *** results provide new insights into the development of nanofiber optoelectronic neuromorphic devices with synergistic synaptic plasticity.

关键词： W-doped In_(2)O_(3)nanofibers neuromorphic transistors optoelectronic synaptic plasticity

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Combining reinforcement learning with mathematical programming:An approach for optimal design of heat exchanger networks

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Chinese Journal of Chemical Engineering 2024年第5期69卷 63-71页

作者： Hui Tan Xiaodong Hong Zuwei Liao Jingyuan Sun Yao Yang Jingdai Wang Yongrong Yang State Key Laboratory of Chemical Engineering College of Chemical and Biological EngineeringZhejiang UniversityHangzhou 310027China ZJU-Hangzhou Global scientific and technological innovation center Hangzhou 311215China

Heat integration is important for energy-saving in the process *** is linked to the persistently challenging task of optimal design of heat exchanger networks(HEN).Due to the inherent highly nonconvex nonlinear and combinatorial nature of the HEN problem,it is not easy to find solutions of high quality for large-scale *** reinforcement learning(RL)method,which learns strategies through ongoing exploration and exploitation,reveals advantages in such ***,due to the complexity of the HEN design problem,the RL method for HEN should be dedicated and designed.A hybrid strategy combining RL with mathematical programming is proposed to take better advantage of both *** insightful state representation of the HEN structure as well as a customized reward function is introduced.A Q-learning algorithm is applied to update the HEN structure using theε-greedy *** results are obtained from three literature cases of different scales.

关键词： Heat exchanger network Reinforcement learning Mathematical programming Process design

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High-performance and multifunctional organic photovoltaic devices

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Journal of Zhejiang University-Science A(Applied Physics & Engineering) 2024年第10期25卷 841-853页

作者： Yiming WANG Lijian ZUO State Key Laboratory of Silicon Materials Department of Polymer Science and EngineeringZhejiang UniversityHangzhou 310027China Zhejiang University-Hangzhou Global scientific and technological innovation center Hangzhou 310014China

Organic photovoltaic devices(OPVs)are emerging as a promising renewable energy source for the *** unique advantages,such as semitransparency,light weight,superior flexibility,and low cost,enable a wide range of ***,compared to silicon-based photovoltaics,OPVs still face challenges for further improving their ***,there is a need to explore their potential of multi-functionality for practical application in various *** review summarizes the recent achievements in optimizing device performance and enhancing power-conversion efficiency,particularly via tuning the intermolecular interaction to reduce the electron-vibration coupling and non-radiative charge recombination(denoted as the“dilution effect”).Moreover,the representative development of ultra-thin Ag transparent electrode-based OPVs with multi-functional capabilities(such as semitransparency,flexibility,stretchability,and better aesthetics)has also been ***,this review aims to provide a broad landscape on the recent development of OPV and to unlock the full potential of OPVs.

关键词： Organic photovoltaic Multi-component Semitransparent Flexibility

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Electrical modeling of dielectric barrier discharge considering surface charge on the plasma modified material

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Chinese Physics B 2020年第7期29卷 383-388页

作者： Hong-Lu Guan Xiang-Rong Chen Tie Jiang Hao Du Ashish Paramane Hao Zhou Zhejiang Provincial Key Laboratory of Electrical Machine Systems College of Electrical EngineeringZhejiang UniversityHangzhou 310027China ZJU-Hangzhou Global scientific and technological innovation center Hangzhou 311200China

We present the variations of electrical parameters of dielectric barrier discharge(DBD)when the DBD generator is used for the material modification,whereas the relevant physical mechanism is also *** equivalent circuit model is applied for a DBD generator working in a filament discharging mode,considering the addition of epoxy resin(EP)as the plasma modified *** electrical parameters are calculated through the circuit *** surface conductivity,surface potential decay,trap distributions and surface charge distributions on the EP surface before and after plasma treatments were measured and *** is found that the coverage area of micro-discharge channels on the EP surface is increased with the discharging time under the same applied AC *** results indicate that the plasma modified material could influence the ignition of new filaments in return during the modification ***,the surface conductivity and density of shallow traps with low trap energy of the EP samples increase after the plasma *** surface charge distributions indicate that the improved surface properties accelerate the movement and redistribution of charge carriers on the EP *** variable electrical parameters of discharge are attributed to the redistribution of deposited surface charge on the plasma modified EP sample surface.

关键词： dielectric barrier discharge surface charge plasma treatment circuit model

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Investigation of Ag(Ga,In)Se_(2)as thin-film solar cell absorbers:A first-principles study

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Science China(Physics,Mechanics & Astronomy) 2022年第10期65卷 101-108页

作者： Rong Wang Baoying Dou Yifeng Zheng Su-Huai Wei Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation CenterHangzhou 311200China Beijing Computational Science Research center Beijing 100193China

Using first-principles calculations,the structural,electronic,and defect properties of AgInSe_(2)(AIS),AgGaSe_(2)(AGS),and their alloys(AIGS)are systematically studied and compared with their Cu counterparts as potential candidates for thin-film solar cell *** bandgap energies of AIS(1.24 eV)and AGS(1.84 eV)are larger than their Cu counterparts,despite their larger lattice *** to the Shockley-Queisser theory,AIS or AIGS could be more suitable for solar-cell-absorber materials than their Cu ***,after investigating the band structures and intrinsic defect properties of AIS and AGS,we find that,(i)AIS and AGS have large negative crystal field splitting,thus low density of states near the valence band maximum(VBM);(ii)similar to the Cu counterparts,Ag vacancy(V_(Ag))is the main hole-carrier provider,while In_(Ag)(or Ga_(Ag))serves as the hole-carrier killer in p-type AIS(or AGS).However,because the positions of theVBM and conduction band minimum of AIS(or AGS)are lower than those of Cu In Se_(2)(CIS)[or Cu Ga Se_(2)(CGS)],the compensation of the p-type doping in AIS(or AGS)is more ***,the p-type doping of AIS(or AIGS)is more difficult than that of CIS(or CIGS),which is consistent with the doping limit *** improve the p-type doping of the AIS(or AIGS)as the solar-cell absorber,thus,improve the power conversion efficiency(PCE),the Ag-rich/(In,Ga)-poor/Se-rich growth condition is *** engineering of AIS with AGS can enhance the PCE because it can tune the bandgap energy of the absorber and band alignment at the absorber/buffer *** importantly,we suggest that for AIS(or AIGS)solar cell,the traditional buffer material of Cd S is not suitable anymore due to the large conduction band offset between AIS and Cd S.A new buffer layer material with a lower conduction band edge is necessary for better electron transport in AIS(or AIGS)solar cell.

关键词： thin-film solar cells chalcopyrites point defects alloys first-principles calculations

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CaCO_(3)-MnSiO_(x)hybrid particles to enable CO_(2)-mediated combinational tumor therapy

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Nano Research 2022年第9期15卷 8281-8290页

作者： Congkun Xie Tian Zhang Yike Fu Gaorong Han Xiang Li State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang 310027China ZJU-Hangzhou Global scientific and technological innovation center Zhejiang UniversityHangzhou 311200China

Nanocatalysts mediated reactive oxygen species(ROS)based therapy has been exploited as an alternative therapeutic modality of tumor with high specificity and minimal side ***,the treatment outcome is limited by the efficiency of local catalytic ***,we report a novel type of core–shell hybrid nanoparticles(CaCO_(3)@MS),consisting of CaCO_(3)and MnSiO_(x),for synergistic tumor inhibition combining enhanced catalytic effect and calcium *** this system,MnSiO_(x)serves as catalysts with glutathione(GSH)responsive Mn^(2+)ions release ***_(3)nanoparticles play three important roles,including carbon dioxide(CO_(2))donor,pH modulator,and Ca^(2+)overload *** is found that the CaCO_(3)nanoparticles can induce CO_(2)production and pH increase in acidic tumor environment,both of which promote Mn^(2+)mediated ROS *** simultaneous release of Ca^(2+)ions from CaCO_(3)triggers calcium overload in tumor,which functions collaboratively with excessive ROS to induce cancer cell *** results demonstrate that after treatment with CaCO_(3)@MS,a remarkable tumor inhibition was achieved both in vitro and in vivo,while no clear toxic effect was *** study has therefore provided a feasible effective approach to improve catalytic therapeutic efficacy by an“exogenous CO_(2)delivery”strategy for combinational tumor therapy.

关键词： nanocatalytic therapy manganese silicate carbon dioxide(CO_(2)) Ca^(2+)overload pH modulation

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