Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory
作者机构：College of Integrated CircuitsHangzhou Global Scientific and Technological Innovation CentreZhejiang University
出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))
年 卷 期：2024年第67卷第6期
页 面：190-197页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）]
基 金：supported by National Natural Science Foundation of China (Grant Nos. 62090034, 62104214, 62261160574, 62090030) National Key R&D Program of China (Grant No. 2022YFA1204303) Young Elite Scientists Sponsorship Program by CAST (Grant No. 2021QNRC001) Opening Project of Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University (Grant No. JDGD-202202) Kun-Peng Program of Zhejiang Province ZJU Micro-Nano Fabrication Center ZJU-Hangzhou Global Scientific and Technological Innovation Center for the supports
主 题：heterogeneous integration charge-coupled device floating gate optical memory molybdenum disulfide lightly doped silicon
摘 要：Optical memory integrates the function of optical sensing in memory devices, remarkably promoting the interconnection between sensory and memory terminals. Silicon charge-coupled photodetectors and floating gate memory have been widely used in imaging and storage technologies, respectively. However,the heterogeneous integration of the two devices requires technological innovation and complex electrical connections. In this work, we adopt a three-dimensional layer stacking method to design a novel optical memory device. On the top of Si charge-coupled photodetectors, we successively deposit two-dimensional graphene,hexagonal boron nitride, and molybdenum disulfide as a floating gate layer, a tunneling layer, and a readout layer, respectively. By applying a gate bias on lightly doped Si, a deep depletion layer is formed with a high voltage potential drop. Under dark conditions, the depletion layer cannot be filled, and the electric field across the h-BN tunnel barrier is relatively small. Under light irradiation, the deep depletion layer is gradually filled, and the h-BN tunneling layer withstands the increasing electric field, resulting in charge storage in the floating gate layer. Based on this mechanism, the device exhibits a gate voltage-dependent operation mode, including an integrated optical sensing-memory mode and an electrically driven storage mode. Under moderate gate voltage, the device can effectively detect the optical information with varied intensity and store the optical information in the floating gate, displaying optically controlled memory characteristics. Our work demonstrates a compact device structure for optical memory and displays excellent optically controlled memory performance, which can be applied in artificial vision systems.
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