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Performance analysis of Insb based QWFET for ultra high speed applications

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Journal of semiconductors 2015年第1期36卷 60-63页

作者： T.D.subash T.Gnanasekaran C.Divya k.n.s.k.college of engineering Nagercoil-629901 India department of IT RMK College of Engineering and Technology 629401 India Centre for IT & Eng Manonmaniam Sundaranar University 627012 India

An indium antimonide based QWFET（quantum well field effect transistor） with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for semiconductors（ITRs）requirements of drive current（semiconductor Industry Association 2010）. The performance of the device is investigated using the sYnOPsYs CAD（TCAD） software. In sb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5–10 times low DC power dissipation.

关键词： QWFET Insb gate length cut-off frequency short-channel effects

THD Reduction for Permanent Magnet synchronous Motor Using simulated Annealing

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Intelligent Automation & soft Computing 2023年第2期35卷 2325-2336页

作者： R.senthil Rama C.R.Edwin selva Rex n.Herald Anantha Rufus J.Annrose department of Electrical&Electronics engineering Kalaivanar N S K College of EngineeringNagercoil629001India department of Electrical&Electronics engineering Vignana Bharathi Institute of TechnologyHyderabad501301India department of Electronics and Communication engineering Vel Tech Rangarajan Dr.Sagunthala R&D Institute of Science and TechnologyChennai600062India department of Information Technology St.Xavier’s Catholic College of EngineeringNagercoil629003India

Any nonlinear behavior of the system is analyzed by a useful way of Total Harmonic Distortion(THD)*** THD achieves lower peak current,higher efﬁciency and longer equipment life *** annealing(sA)is applied due to the effectiveness of locating solutions that are close to ideal and to challenge large-scale combinatorial optimization for Permanent Magnet synchronous Machine(PMsM).The parameters of direct torque controllers(DTC)for the drive are automatically adjusted by the optimization *** of the PI-Fuzzy-sA algorithm are retained when used *** also improves the rate of system *** response improvement and har-monic reduction is achieved with sA-based DTC for *** mechanism is known to be faster than other ***,it is observed that as compared to other algorithms,the projected algorithm yields a reduced total harmonic *** a result of the employment of space Vector Modulation(sVM)techni-que,the system is resistant to changes in motor speciﬁcations and load *** MATLAB&simulink simulation,the experiment is done and the per-formance is calculated for the controller.

关键词： PMsM simulated annealing space vector modulation direct torque control THD

Analysis of charge density and Fermi level of Al In sb/In sb single-gate high electron mobility transistor

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Journal of semiconductors 2015年第6期36卷 47-52页

作者： s.Theodore Chandra n.B.Balamurugan M.Bhuvaneswari n.Anbuselvan n.Mohankumar national Instruments Electronics Laboratory Department of ECE Thiagarajar College of Engineering department of ece SKP Engineering College

A compact model is proposed to derive the charge density of the AlInsb/Insb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with applied gate voltage. The proposed model considers the Fermi level dependence of charge density and vice versa. The analytical results generated by the proposed model are compared and they agree well with the experimental results. The developed model can be used to implement a physics based compact model for an Insb HEMT device in sPICE applications.

关键词： charge density Fermi level high electron mobility transistor 2D analytical model

A novel AnFIs Based sMC with Fractional Order PID Controller

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Intelligent Automation & soft Computing 2023年第4期36卷 745-760页

作者： A.Jegatheesh M.Germin nisha n.kopperundevi department of ece Arunachala College of Engineering for WomenVellichanthai629203Tamil NaduIndia department of EEE St Xaviers Catholic College of EngineeringNagercoil290036Tamil NaduIndia department of ece Swarnandhra College of Engineering and TechnologyNarasapur534280Andhra PradeshIndia

Interacting The highest storage capacity of a circular tank makes it pop-ular in process *** of the varying surface area of the cross-sec-tions of the tank,this two-tank level system has nonlinear *** theﬂow rate of liquid is one of the most difﬁcult challenges in the production *** proposed effort is critical in preventing time delays and errors by managing theﬂuid *** scholars have explored and explored ways to reduce the problem of nonlinearity,but their techniques have not yielded better *** types of controllers with various techniques are implemented by the proposed *** Mode Controller(sMC)with Fractional Order PID Controller based on Intelligent Adaptive neuro-Fuzzy Infer-ence system(AnFIs)is a novel technique for liquid level regulation in an inter-connected spherical tank system to avoid interferences and achieve better performance in comparison of rise time,settling time,and overshoot *** the simulated results acquired by the controller yields the efﬁciency of the proposed *** simulated results were produced using MATLAB 2018 and the FOMCOn ***,the performance of the conventional controller(FOPID,PID-sMC)and proposed AnFIs based sMC-FOPID control-lers are compared and analyzed the performance indices.

关键词： nonlinear system performance indices AnFIs based sliding mode controller with fractional order PID PID controller

Effect of B_(4)C on strength coefficient,cold deformation and work hardening exponent characteristics of Mg composites

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Journal of Magnesium and Alloys 2022年第5期10卷 1381-1400页

作者： s.suresh M.navaneetha krishnan s.C.Vettivel department of Mechanical engineering University College of EngineeringNagercoilTamilnaduIndiaPin:629004 department of Mechanical engineering Universal College of Engineering and TechnologyVallioorTamilnaduIndiaPin:627117 department of Mechanical engineering Chandigarh College of Engineering and TechnologyChandiagarh 160019India

The emphasis of this exploration was to examine the workability and work hardening performance of Mg(Magnesium)specimen and Mg-B_(4)C composites created via the powder metallurgy *** pure Mg and Mg-B_(4)C composites are made with distinct weight percentages(Mg-5%B_(4)C,Mg-10%B_(4)C,and Mg-15%B_(4)C)at the unit aspect *** powders and composites characterization are executed by sEM(scanning Electron Microscope),EDs(Energy Dispersive spectrum)with an elemental map,and XRD(X-ray Diffraction)*** displays that,the B_(4)C particles were dispersed consistently with the Mg *** workability and work hardening examination was conducted in triaxial stress conditions using the cold deformation *** consequence of workability stress exponent factor(β_(σ)),distinct stress proportion factors(σ_(m)/σ_(eff)and σ_(θ)/σ_(eff)),instantaneous work hardening exponent(n_(1)),work hardening exponent(n),coefficient of strength(k)and instantaneous coefficient of strength(k_(1))are *** outcome displays that Mg-15%B_(4)C specimen has greater workability and work hardening parameter,initial relative density,and triaxial stresses compared with the Mg specimen and Mg-(5–10%)B_(4)C composites.

关键词： Powder metallurgy Cold deformation Workability Instantaneous work hardening exponent Workability stress exponent Triaxial stress

Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric

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Journal of semiconductors 2014年第4期35卷 48-51页

作者： s.Theodore Chandra n.B.Balamurugan national Instruments Electronics Laboratory Department of ECE Thiagarajar College of Engineering

We have analyzed the effective oxide thickness （EOT） of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional si02 gate insulator with a material that has a much higher dielectric constant （high-k） gate, materials like si3n4, Al2O3, Y2O3 and HfO2. We have also analyzed the channel conductance, the effect of a change in thickness, the average velocity of the charge carrier and the conductance efficiency in order to study the performance of silicon nanowire transistors in the nanometer region. The analysis was performed using the Fettoy, a numerical simulator for ballistic nanowire transistors using a simple top of the barrier （natori） approach, which is composed of several matlab scripts. Our results show that hafnium oxide （HfO2） gate insulator material provides good thermal stability, a high recrystallization temperature and better interface qualities when compared with other gate insulator materials; also the effective oxide thickness of lifO2 is found to be 0.4 nm.

关键词： high-k dielectric hafnium oxide silicon nanowire transistor effective oxide thickness

Compact analytical model for single gate AlInsb/Insb high electron mobility transistors

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Journal of semiconductors 2014年第11期35卷 46-50页

作者： s.Theodore Chandra n.B.Balamurugan G.subalakshmi T.shalini G.Lakshmi Priya national Instruments Electronics Laboratory Department of ECEThiagarajar College of Engineering

We have developed a 2D analytical model for the single gate Allnsb/lnsb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calculating the parameters such as surface potential, electric field distribution and drain current. The high mobility of the AlInsb/Insb quantum makes this HEMT ideal for high frequency, high power applications. The working of the single gate Allnsb/Insb HEMT device is studied by considering the variation of gate source voltage, drain source voltage, and channel length under the gate region and temperature. The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions. The results from the analytical model are compared with that of numerical simulations （TCAD） and a good agreement between them is achieved.

关键词： high electron mobility transistor AlInsb/Insb quantum well 2D analytical model Poisson's equation surface potential electric field

Test Vector Optimization Using Pocofan-Poframe Partitionin

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Computers, Materials & Continua 2018年第3期54卷 251-268页

作者： P.PattunnaRajam Reeba korah G.Maria kalavathy department of ece Anna UniversityChennaiTamil NaduIndia department of ece Alliance UniversityBangaloreKarnatakaIndia department of CsE St.Joseph’s College of EngineeringChennaiTamil NaduIndia

This paper presents an automated POCOFAn-POFRAME algorithm thatpartitions large combinational digital VLsI circuits for pseudo exhaustive testing. In thispaper, a simulation framework and partitioning technique are presented to guide VLsIcircuits to work under with fewer test vectors in order to reduce testing time and todevelop VLsI circuit designs. This framework utilizes two methods of partitioningPrimary Output Cone Fanout Partitioning (POCOFAn) and POFRAME partitioning todetermine number of test vectors in the circuit. The key role of partitioning is to identifyreconvergent fanout branch pairs and the optimal value of primary input node n andfanout F partitioning using I-PIFAn algorithm. The number of reconvergent fanout andits locations are critical for testing of VLsI circuits and design for testability. Hence, theirselection is crucial in order to optimize system performance and reliability. In the presentwork, the design constraints of the partitioned circuit considered for optimizationincludes critical path delay and test time. POCOFAn-POFRAME algorithm uses theparameters with optimal values of circuits maximum primary input cone size (n) andminimum fan-out value (F) to determine the number of test vectors, number of partitionsand its locations. The IsCAs’85 benchmark circuits have been successfully partitioned,the test results of C499 shows 45% reduction in the test vectors and the experimentalresults are compared with other partitioning methods, our algorithm makes fewer testvectors.

关键词： Pseudo exhaustive testing POCOFAn (Primary Output Cone FanoutPartitioning) POFRAME partitioning combinational digital VLsI circuit testing criticalpath delay testing time design for testability

Efficient Communication in Wireless sensor networks Using Optimized Energy Efficient Engroove Leach Clustering Protocol

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Tsinghua science and Technology 2024年第4期29卷 985-1001页

作者： n.Meenakshi sultan Ahmad A.V.Prabu J.nageswara Rao nashwan Adnan Othman Hikmat A.M.Abdeljaber R.sekar Jabeen nazeer sRM Institute of science and Technology KattankulathurChennai 603203India department of Computer science College of Computer Engineering and SciencesPrince Sattam Bin Abdulaziz UniversityAlkharj 11942Saudi Arabia University Center for Research and Development(UCRD) Department of Computer Science and EngineeringChandigarh UniversityGharuanMohali 140413India department of ece Koneru Lakshmaiah Education FoundationVaddeswaramGuntur 522502India department of Computer science and engineering Lakireddy Balireddy College of Engineering(A)NTR District 521230India department of Computer engineering College of EngineeringKnowledge UniversityErbil 44001Iraq department of Computer science Faculty of Information TechnologyApplied Science Private UniversityAmman 11937Jordan department of Electronics and Communication engineering(ece) School of EngineeringPresidency UniversityBangalore 834001India

The Wireless sensor network(Wsn)is a network that is constructed in regions that are inaccessible to human *** widespread deployment of wireless micro sensors will make it possible to conduct accurate environmental monitoring for a use in both civil and military *** make use of these data to monitor and keep track of the physical data of the surrounding environment in order to ensure the sustainability of the *** data have to be picked up by the sensor,and then sent to the sink node where they may be *** nodes of the Wsns are powered by batteries,therefore they eventually run out of *** energy restriction has an effect on the network life span and environmental *** objective of this study is to further improve the Engroove Leach(EL)protocol’s energy efficiency so that the network can operate for a very long time while consuming the least amount of *** lifespan of Wsns is being extended often using clustering and routing *** Meta Inspired Hawks Fragment Optimization(MIHFO)system,which is based on passive clustering,is used in this study to do *** cluster head is chosen based on the nodes’residual energy,distance to neighbors,distance to base station,node degree,and node *** on distance,residual energy,and node degree,an algorithm known as Heuristic Wing Antfly Optimization(HWAFO)selects the optimum path between the cluster head and Base station(Bs).They examine the number of nodes that are active,their energy consumption,and the number of data packets that the Bs *** overall experimentation is carried out under the MATLAB *** the analysis,it has been discovered that the suggested approach yields noticeably superior outcomes in terms of throughput,packet delivery and drop ratio,and average energy consumption.

关键词： wireless sensor networks energy efficient engroove leach protocol meta inspired Hawks fragment optimization heuristic wing antfly optimization