Performance analysis of InSb based QWFET for ultra high speed applications

作     者：T.D.Subash T.Gnanasekaran C.Divya 

作者机构：K.N.S.K College of Engineering Nagercoil-629901 India Department of IT RMK College of Engineering and Technology 629401 India Centre for IT & Eng Manonmaniam Sundaranar University 627012 India 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第1期

页      面：60-63页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 12[管理学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：QWFET InSb gate length cut off frequency short channel effects 

摘      要：An indium antimonide based QWFET（quantum well field effect transistor） with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for Semiconductors（ITRS）requirements of drive current（Semiconductor Industry Association 2010）. The performance of the device is investigated using the SYNOPSYS CAD（TCAD） software. In Sb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5–10 times low DC power dissipation.