Analytical modeling of AlInSb/InSb MOS gate HEMT structure with improved performance

作     者：T.D.Subash T.Gnanasekaran P.Deepthi Nair 

作者机构：Department of ECE K.N.S.K.College of Engineering NagercoilTamilnaduIndia Department of IT R.M.K.College of Engineering and Technology ChennaiTamilnaduIndia Department of ECE Annai Vailankanni College of Engineering KanyakumariTamilnaduIndia 

出 版 物：《International Journal of Modeling, Simulation, and Scientific Computing》 (建模、仿真和科学计算国际期刊（英文）)

年 卷 期：2016年第7卷第3期

页      面：386-394页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0701[理学-数学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

主　　题：Heterostructure 2DEG HEMT bandgap 

摘      要：The performance of AlInSb/InSb heterostructure with various parameters is considered with T-Cad *** the heterojunctions are having more advantageous properties that is a real support for so many application such as solar cells,semiconductor cells and *** properties of semiconductors are discussed here with various parameters that are depending up on the performance of accurate device[Pardeshi H.,Pati S.K.,Raj G.,Mohankumar N.,Sarkar C.K.,***.33(12):124001-1–124001-7,2012].The maximum drain current density is achieved with improving the density of two-dimensional electron gas(2DEG)and with high *** electron mobility transistor(HEMT)structure is used with the different combinations of layers which have different *** such as electron mobility,bandgap,dielectric constant,etc.,are considered differently for each layer[Zhang A.,Zhang L.,Tang Z.,IEEE *** Devices 61(3):755–761,2014].The high electron mobility electrons are now widely used in so many *** proposed work of AlInSb/InSb heterostructure implements the same process which will be a promise for future research works.