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Elevating the comprehensive thermal properties of rare-earth cerates through high-entropy design

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Journal of Materiomics 2024年第5期10卷 1126-1136页

作者： Zhaoxuan Zhang Yiling Huang Fan Peng Wei Zheng Caifen Jiang Xuemei Song Yi Zeng School of microelectronics Shanghai UniversityShanghai201800China The State Key Lab of High Performance Ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of ScienceShanghai200050China

In the rapidly evolving aerospace sector,the quest for sophisticated thermal barrier coating(TBC)materials has *** materials are primarily sought for their superior comprehensive thermal characteristics,which include a low thermal conductivity coupled with a high coefficient of thermal expansion(CTE)that synergizes with the *** our study,we adopt a solid-state method to synthesize a series of high-entropy rare-earth cerates:La_(2)Ce_(2)O_(7)(1RC),(La_(1/2)Nd_(1/2))2Ce_(2)O_(7)(2RC),(La_(1/3)Nd_(1/3)Sm_(1/3))_(2)Ce_(2)O_(7)(3RC),(La_(1/4)Nd_(1/4)Sm_(1/4)Eu_(1/4))_(2)Ce_(2)O_(7)(4RC),and(La_(1/5)Nd_(1/5)Sm_(1/5)Eu_(1/5)Gd_(1/5))2Ce2O7(5RC),all sintered at 1,600℃ for 10 *** thoroughly examine their phase structure,morphology,elemental distribution,and thermal *** in-depth analysis of the phonon scattering mechanisms reveals that 4RC and 5RC exhibit exceptional thermal properties:high CTEs of 13.00×10^(−6) K^(−1) and 12.77×10^(−6) K^(−1) at 1,400℃,and low thermal conductivities of 1.55 W/(m·K)and 1.68 W/(m·K)at 1,000℃,*** to other TBC systems,4RC and 5RC stand out for their excellent thermal *** study significantly contributes to the development of high-entropy oxides for TBC applications.

关键词： Thermal barrier coatings(TBCs) Comprehensive thermal properties Coefficient of thermal expansion Thermal conductivity Phonon scattering mechanisms

Hyperbolic hierarchical graph attention network for knowledge graph completion

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High Technology Letters 2024年第3期30卷 271-279页

作者： XU Hao CHEN Shudong QI Donglin TONG Da YU Yong CHEN Shuai institute of microelectronics of Chinese Academy of Sciences Beijing 100029P.R.China University of Chinese Academy of Sciences Beijing 100049P.R.China

Utilizing graph neural networks for knowledge embedding to accomplish the task of knowledge graph completion(KGC)has become an important research area in knowledge graph ***,the number of nodes in the knowledge graph increases exponentially with the depth of the tree,whereas the distances of nodes in Euclidean space are second-order polynomial distances,whereby knowledge embedding using graph neural networks in Euclidean space will not represent the distances between nodes *** paper introduces a novel approach called hyperbolic hierarchical graph attention network(H2GAT)to rectify this ***,the paper conducts knowledge representation in the hyperbolic space,effectively mitigating the issue of exponential growth of nodes with tree depth and consequent information ***,it introduces a hierarchical graph atten-tion mechanism specifically designed for the hyperbolic space,allowing for enhanced capture of the network structure inherent in the knowledge ***,the efficacy of the proposed H2GAT model is evaluated on benchmark datasets,namely WN18RR and FB15K-237,thereby validating its *** H2GAT model achieved 0.445,0.515,and 0.586 in the Hits@1,Hits@3 and Hits@10 metrics respectively on the WN18RR dataset and 0.243,0.367 and 0.518 on the FB15K-237 *** incorporating hyperbolic space embedding and hierarchical graph attention,the H2GAT model successfully addresses the limitations of existing hyperbolic knowledge embedding models,exhibiting its competence in knowledge graph completion tasks.

关键词： hyperbolic space link prediction knowledge graph embedding knowledge graph completion(KGC)

SHEL:a semantically enhanced hardware-friendly entity linking method

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High Technology Letters 2024年第1期30卷 13-22页

作者：亓东林 CHEN Shudong DU Rong TONG Da YU Yong institute of microelectronics of Chinese Academy of Sciences Beijing 100029P.R.China University of Chinese Academy of Sciences Beijing 100190P.R.China

With the help of pre-trained language models,the accuracy of the entity linking task has made great strides in recent ***,most models with excellent performance require fine-tuning on a large amount of training data using large pre-trained language models,which is a hardware threshold to accomplish this *** researchers have achieved competitive results with less training data through ingenious methods,such as utilizing information provided by the named entity recognition *** paper presents a novel semantic-enhancement-based entity linking approach,named semantically enhanced hardware-friendly entity linking(SHEL),which is designed to be hardware friendly and efficient while maintaining good ***,SHEL's semantic enhancement approach consists of three aspects:(1)semantic compression of entity descriptions using a text summarization model;(2)maximizing the capture of mention contexts using asymmetric heuristics;(3)calculating a fixed size mention representation through pooling *** series of semantic enhancement methods effectively improve the model's ability to capture semantic information while taking into account the hardware constraints,and significantly improve the model's convergence speed by more than 50%compared with the strong baseline model proposed in this *** terms of performance,SHEL is comparable to the previous method,with superior performance on six well-established datasets,even though SHEL is trained using a smaller pre-trained language model as the encoder.

关键词： entity linking(EL) pre-trained models knowledge graph text summarization semantic enhancement

SSA-over-array(SSoA):A stacked DRAM architecture for nearmemory computing

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Journal of Semiconductors 2024年第10期45卷 42-53页

作者： Xiping Jiang Fujun Bai Song Wang Yixin Guo Fengguo Zuo Wenwu Xiao Yubing Wang Jianguo Yang Ming Liu institute of microelectronics of the Chinese Academy of Sciences Beijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100029China Xi’an UniIC Semiconductors Xi’an 710075China School of microelectronics University of Science and Technology of ChinaHefei 230026China

Aiming to enhance the bandwidth in near-memory computing,this paper proposes a SSA-over-array(SSoA)*** relocating the secondary sense amplifier(SSA)from dynamic random access memory(DRAM)to the logic die and repositioning the DRAM-to-logic stacking interface closer to the DRAM core,the SSoA overcomes the layout and area limitations of SSA and master DQ(MDQ),leading to improvements in DRAM data-width density and frequency,significantly enhancing bandwidth *** quantitative evaluation results show a 70.18 times improvement in bandwidth per unit area over the baseline,with a maximum bandwidth of 168.296 Tbps/*** believe the SSoA is poised to redefine near-memory computing development strategies.

关键词： near-memory vertical stacking SSA bandwidth density

Proximity-induced magnetic order in topological insulator on ferromagnetic semiconductor

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Science China(Information Sciences) 2023年第12期66卷 267-274页

作者： Hangtian WANG Koichi MURATA Weiran XIE Jing LI Jie ZHANG Kang L.WANG Weisheng ZHAO Tianxiao NIE School of Integrated Circuit Science and Engineering and Advanced Innovation Center for Big Data and Brain Computing Beihang University beihang-goertek joint microelectronics institute Qingdao Research InstituteBeihang University Department of Electrical Engineering University of California

Introducing magnetic order into topological insulator(TI) to break the time-reversal symmetry can yield numerous fascinating physical phenomena,which brings new hope for the emerging spintronic *** proximity effect is regarded as a promising strategy that could advance the step for realistic application by choosing a suitable ferromagnetic layer with the merits of high Curie temperature and high compatibility with mainstream semiconductor ***,we prepare a Bi2Se3thin film on Sicompatible ferromagnetic semiconductor(FMS) of MnxGe1-xby molecular beam *** integration,the nonmagnetic Bi2Se3exhibits an anomalous Hall signal and a clear weak localization cusp in magnetoresistance until 150 K,confirming that a high-temperature magnetism can be induced by the proximity *** investigation of the magnetoconductance quantitatively indicates that the Bi2Se3conductance suffers a transition from weak antilocalization to weak localization behavior after integrating with MnxGe1-x,and an 80 meV bandgap is predicted to be opened in the surface states in Bi2Se3layer due to the proximityinduced *** results prove that the proximity effect could be an important method to achieve topological magnetism at high temperatures,and reveals its potential for the manipulation of the topological surface states.

关键词： topological insulator ferromagnetic semiconductor proximity effect quantum interference

High-performance flexible semiconductor fibres for multi-scenario communication applications

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Science China Materials 2024年第7期67卷 2363-2364页

作者： Qinghui Lin Yang Li Guozhen Shen School of Information Science and Engineering University of JinanJinan 250022China School of microelectronics Shandong UniversityJinan 250101China School of Integrated Circuits and Electronics Beijing institute of Technology Beijing 100081China

With the advances in the field of flexible fibre technology in recent years,a variety of flexible fibres with different preparation processes have emerged[1,2].However,most of the flexible fibres in the past have structural breaks,making them unsuitable for long-term use as wearable fabrics[3,4].Glass semiconductors are widely used in thermally stretched fibres due to their advantages such as controllable fluidity,but they suffer from electronic defects compared with crystalline semi conductors in electronic semiconductors such as silicon(Si)and germanium(Ge)[5].Obviously,the semiconductor component in flexible optic fibres is a key component in regulating their mechanical and electrical properties[6].

关键词： wear fibres fibre

Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

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Journal of Semiconductors 2024年第7期45卷 40-44页

作者： Yuting Chen Xinlv Duan Xueli Ma Peng Yuan Zhengying Jiao Yongqing Shen Liguo Chai Qingjie Luan Jinjuan Xiang Di Geng Guilei Wang Chao Zhao Beijing Superstring Academy of Memory Technology Beijing 100176China State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

关键词： In-Ga-Zn-O(IGZO) thermal atomic layer deposition vertical channel thin-film transistor

Emerging materials and transistors for integrated circuits

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National Science Review 2024年第3期11卷 7-8页

作者： Ming Liu Lian-Mao Peng Lab of Nanofabrication and Novel Device Integration Institute of Microelectronics Chinese Academy of Sciences Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics School of Electronics Peking University

The device technology for integrated circuits(ICs) has received a great deal of attention in the past decade since the mainstream silicon-based complementary metal-oxide-semiconductor(CMOS) field-effect transistor(FET) for modern ICs had been encountering development bottlenecks due to the combination of power constraints, physics, cost and fabrication processes.

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Optimized numerical density functional theory calculation of rotationally symmetric jellium model systems

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Chinese Physics B 2024年第10期33卷 349-355页

作者： Guangdi Zhang Li Mao Hongxing Xu School of Physics and Technology Wuhan UniversityWuhan 430070China Wuhan institute of Quantum Technology Wuhan 430205China School of microelectronics Wuhan UniversityWuhan 430072China Henan Academy of Sciences Zhengzhou 450046China

In real space density functional theory calculations,the effective potential depends on the electron density,requiring self-consistent iterations,and numerous integrals at each step,making the process *** our research,we propose an optimization method to expedite density functional theory(DFT)calculations for systems with large aspect ratios,such as metallic nanorods,nanowires,or scanning tunneling microscope *** method focuses on employing basis set to expand the electron density,Coulomb potential,and exchange-correlation *** precomputing integrals and caching redundant results,this expansion streamlines the integration process,significantly accelerating DFT *** a case study,we have applied this optimization to metallic nanorod systems of various radii and lengths,obtaining corresponding ground-state electron densities and potentials.

关键词： density functional theory basis set integrals precomputation nanorod