Proximity-induced magnetic order in topological insulator on ferromagnetic semiconductor

作     者：Hangtian WANG Koichi MURATA Weiran XIE Jing LI Jie ZHANG Kang L.WANG Weisheng ZHAO Tianxiao NIE Hangtian WANG;Koichi MURATA;Weiran XIE;Jing LI;Jie ZHANG;Kang L.WANG;Weisheng ZHAO;Tianxiao NIE

作者机构：School of Integrated Circuit Science and Engineering and Advanced Innovation Center for Big Data and Brain ComputingBeihang University Beihang-Goertek Joint Microelectronics InstituteQingdao Research InstituteBeihang University Department of Electrical EngineeringUniversity of California 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2023年第66卷第12期

页      面：267-274页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 070203[理学-原子与分子物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 070204[理学-等离子体物理] 070202[理学-粒子物理与原子核物理] 0701[理学-数学] 0702[理学-物理学] 

基　　金：supported by National Natural Science Foundation of China (Grant Nos. 62274009, 61774013) National Key R & D Program of China (Grant No. 2018YFB0407602) International Collaboration Project (Grant No. B16001) 

主　　题：topological insulator ferromagnetic semiconductor proximity effect quantum interference 

摘      要：Introducing magnetic order into topological insulator(TI) to break the time-reversal symmetry can yield numerous fascinating physical phenomena,which brings new hope for the emerging spintronic *** proximity effect is regarded as a promising strategy that could advance the step for realistic application by choosing a suitable ferromagnetic layer with the merits of high Curie temperature and high compatibility with mainstream semiconductor ***,we prepare a Bi2Se3thin film on Sicompatible ferromagnetic semiconductor(FMS) of MnxGe1-xby molecular beam *** integration,the nonmagnetic Bi2Se3exhibits an anomalous Hall signal and a clear weak localization cusp in magnetoresistance until 150 K,confirming that a high-temperature magnetism can be induced by the proximity *** investigation of the magnetoconductance quantitatively indicates that the Bi2Se3conductance suffers a transition from weak antilocalization to weak localization behavior after integrating with MnxGe1-x,and an 80 meV bandgap is predicted to be opened in the surface states in Bi2Se3layer due to the proximityinduced *** results prove that the proximity effect could be an important method to achieve topological magnetism at high temperatures,and reveals its potential for the manipulation of the topological surface states.