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Darwin3: a large-scale neuromorphic chip with a novel ISA and on-chip learning

National Science Review 2024年第05期11卷 29-45页

作者： De Ma Xiaofei Jin Shichun Sun Yitao Li Xundong Wu Youneng Hu Fangchao Yang Huajin Tang Xiaolei Zhu Peng Lin Gang Pan College of Computer Science and Technology Zhejiang University research center for Intelligent Computing Hardware Zhejiang Lab The State Key Lab of Brain-Machine Intelligence Zhejiang University MOE Frontier Science center for Brain Science and Brain-machine Integration Zhejiang University College of micro-nano College of micro-nano Electronics Zhejiang University

Spiking neural networks(SNNs) are gaining increasing attention for their biological plausibility and potential for improved computational efficiency. To match the high spatial-temporal dynamics in SNNs,neuromorphic chips are highly desired to execute SNNs in hardware-based neuron and synapse circuits directly. This paper presents a large-scale neuromorphic chip named Darwin3 with a novel instruction set architecture, which comprises 10 primary instructions and a few extended instructions. It supports flexible neuron model programming and local learning rule designs. The Darwin3 chip architecture is designed in a mesh of computing nodes with an innovative routing algorithm. We used a compression mechanism to represent synaptic connections, significantly reducing memory usage. The Darwin3 chip supports up to2.35 million neurons, making it the largest of its kind on the neuron scale. The experimental results showed that the code density was improved by up to 2..3× in Darwin3, and that the neuron core fan-in and fan-out were improved by up to 4096× and 3072. by connection compression compared to the physical memory depth. Our Darwin3 chip also provided memory saving between 6.8× and 2.0.8× when mapping convolutional spiking neural networks onto the chip, demonstrating state-of-the-art performance in accuracy and latency compared to other neuromorphic chips.

关键词： neuromorphic computing spiking neural network instruction set architecture connectivity compression

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Slicing capacity-centered mode selection and resource optimization for network-assisted full-duplex cell-free distributed massive MIMO systems

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Science China(Information Sciences) 2024年第1期67卷 203-220页

作者： Jie WANG Jiamin LI Pengcheng ZHU Dongming WANG Hongbiao ZHANG Yue HAO Bin SHENG National Mobile Communications research Laboratory Southeast University 2. Purple Mountain Laboratories China Mobile research Institute

Network-assisted full-duplex(NAFD) cell-free distributed massive multiple-input multipleoutput(MIMO) systems enable uplink(UL) and downlink(DL) communications within the same timefrequency resources,which potentially reduce latency by avoiding the overhead of switching UL/DL ***,how to choose UL/DL modes remains an important factor affecting system *** the dramatic increase in the number of users and access points(APs),massive access brings significant overhead in the mode ***,the different quality of service(QoS) among users also makes the effective utilization of resources *** one of the most promising technologies in sixth-generation(6G),network slicing enables the adaptive configuration of limited UL/DL resources through the resource isolation assisted NAFD ***,we propose a slicing capacity-centered *** this scheme,APs are motivated by slicing requirements and associated slices to form different *** mode selection and resource allocation are performed within each subsystem to reduce overhead and improve resource *** implement this scheme efficiently,a double-layer deep reinforcement learning(DRL)mechanism is used to realize the joint optimization of mode selection and resource *** results show that the slicing capacity-centered scheme can effectively improve resource utilization and reduce overhead.

关键词： network-assisted full-duplex network slicing mode selection resource optimization deep reinforcement learning

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Core-Shell Semiconductor-Graphene nanoarchitectures for Efficient Photocatalysis:State of the Art and Perspectives

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nano-micro Letters 2024年第12期16卷 553-588页

作者： Jinshen Lan Shanzhi Qu Xiaofang Ye Yifan Zheng Mengwei Ma Shengshi Guo Shengli Huang Shuping Li Junyong Kang Engineering research center of {2.-nano Optoelectronic Materials and Devices Ministry of EducationFujian Key Laboratory of Semiconductor Materials and ApplicationsCI Center for OSEDDepartment of PhysicsXiamen UniversityXiamen 361005People’s Republic of China

Semiconductor photocatalysis holds great promise for renewable energy generation and environment remediation,but generally suffers from the serious drawbacks on light absorption,charge generation and transport,and structural stability that limit the *** core-shell semiconductorgraphene(CSSG)nanoarchitectures may address these issues due to their unique structures with exceptional physical and chemical *** review explores recent advances of the CSSG nanoarchitectures in the photocatalytic *** starts with the classification of the CSSG nanoarchitectures by the ***,the construction methods under internal and external driving forces were introduced and compared with each ***,the physicochemical properties and photocatalytic applications of these nanoarchitectures were discussed,with a focus on their role in *** ends with a summary and some perspectives on future development of the CSSG nanoarchitectures toward highly efficient photocatalysts with extensive *** harnessing the synergistic capabilities of the CSSG architectures,we aim to address pressing environmental and energy challenges and drive scientific progress in these fields.

关键词： Core-shell semiconductor-graphene nanoarchitecture Photocatalysis Driving force Interface

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Flexible printed three dimensional(3D) integrated carbon nanotube complementary metal oxide semiconductor(CMOS) thin film transistors and circuits

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Science China(Information Sciences) 2024年第09期67卷 280-293页

作者： Zhaofeng CHEN Jiaqi LI Min LI Hongxuan GUO Jianwen ZHAO SEU-FEI nano-Pico center Key Laboratory of MEMS of Ministry of Education Southeast University Printable Electronics research center Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences School of nano Technology and nano Bionics University of Science and Technology of China

The threshold voltage modulation of carbon nanotube thin-film transistors（TFTs） and flexible three-dimensional（3D） integration circuits has become hot research topics for carbon-based electronics. In this paper, a doping-free gate electrode technology is introduced to significantly modulate the threshold voltage of polymer-sorted semiconducting single-walled carbon nanotube（sc-SWCNT） TFTs in combination with the highly effective gate-controlling ability of solid-state electrolyte thin films as the dielectrics. A systematic investigation was conducted on the impact of printed silver, evaporated silver, and evaporated aluminum（Al） gate electrodes on the threshold voltage of flexible printed bottom-gate and top-gate SWCNT TFTs. The results indicate that the SWCNT TFTs with Al gate electrodes exhibit enhancement-mode characteristics with excellent electrical properties, such as the negative threshold voltages（-0.6 V）, high Ion/Ioff（up to 10～6）, low subthreshold swing(61.4 mV · dec-1), and small hysteresis. It is attributed to either the formation of lower work function thin films（Al2.3） at the electrode/dielectric layer interfaces through the natural oxidation of the Al bottom-gate electrodes or the dipole reaction of the Al top-gate electrodes from X-ray photoelectron spectroscopy（XPS） and ultraviolet photoelectron spectroscopy（UPS） data. In addition, 3D complementary metal-oxide-semiconductor（CMOS） inverters with common gate electrodes were constructed using the resulting enhancement-mode P-type SWCNT TFTs and matched N-type SWCNT TFTs, which shows high voltage gain（34）, rail-to-rail output and high noise margins(80.04%, VDD=-1 V)as well good mechanical flexibility at low operation voltages. It demonstrates that SWCNT TFTs have great advantages for building large-scale 3D flexible integrated circuits.

关键词： three-dimensional CMOS circuits printing technology polymer-sorted semiconducting carbon nanotubes enhancement-mode thin-film transistors threshold voltage modulation

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A self-centering and stiffness-controlled MEMS accelerometer

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microsystems & nanoengineering 2024年第1期10卷 27-40页

作者： Yiming Jin Zhipeng Ma Ziyi Ye Mingkang Li Xudong Zheng Zhonghe Jin School of Aeronautics and Astronautics Zhejiang UniversityHangzhou 310013China Key Laboratory of micro/nano-Satellite {2. of Zhejiang Province Hangzhou 310007PR China

This paper presents a high-performance MEMS accelerometer with a DC/AC electrostatic stiffness tuning capability based on double-sided parallel plates(DSPPs).DC and AC electrostatic tuning enable the adjustment of the effective stiffness and the calibration of the geometric offset of the proof mass,respectively.A dynamical model of the proposed accelerometer was developed considering both DC/AC electrostatic tuning and the temperature *** on the dynamical model,a self-centering closed loop is proposed for pulling the reference position of the forceto-rebalance(FTR)to the geometric center of *** self-centering accelerometer operates at the optimal reference position by eliminating the temperature drift of the readout circuit and nulling the net electrostatic tuning *** stiffness closed-loop is also incorporated to prevent the pull-in instability of the tuned low-stiffness accelerometer under a dramatic temperature ***-time adjustments of the reference position and the DC tuning voltage are utilized to compensate for the residue temperature drift of the proposed *** a result,a novel controlling approach composed of a self-centering closed loop,stiffness-closed loop,and temperature drift compensation is achieved for the accelerometer,realizing a temperature drift coefficient(TDC)of approximately 7μg/℃ and an Allan bias instability of less than 1μg.

关键词： stiffness electrostatic centering

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A spaceborne advanced storage system for remote sensing microsatellites

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Frontiers of Information Technology & Electronic Engineering 2024年第4期25卷 600-615页

作者： Shilei TU Huiquan WANG Yue HUANG Zhonghe JIN micro-Satellite research {2. Zhejiang UniversityHangzhou 310027China Key Laboratory of micro-nano Satellite {2. Zhejiang ProvinceHangzhou 310027China

With the development of satellite miniaturization and remote sensing,the establishment of microsatellite constellations is an inevitable *** to their limited size,weight,and power,spaceborne storage systems with excellent scalability,performance,and reliability are still one of the technical bottlenecks of remote sensing *** on the commercial off-the-shelf field-programmable gate array and memory devices,a spaceborne advanced storage system(SASS)is proposed in this *** work provides a dynamic programming,queue scheduling multiple-input multiple-output cache technique and a high-speed,high-reliability NAND flash controller for multiple microsatellite payload *** results show that SASS has outstanding scalability with a maximum write rate of 2.2. Mb/s and preserves at least 78.53%of the performance when a single NAND flash *** scheduling technique effectively shortens the data scheduling time,and the data remapping method of the NAND flash controller can reduce the retention error by at least 50.73%and the program disturbance error by at least 37.80%.

关键词： microsatellite Spaceborne advanced storage system(SASS) Scalability Performance Reliability

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Lewis acid-doped transition metal dichalcogenides for ultraviolet–visible photodetectors

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Chinese Physics B 2024年第9期33卷 628-635页

作者： Heng Yang Mingjun Ma Yongfeng Pei Yufan Kang Jialu Yan Dong He Changzhong Jiang Wenqing Li Xiangheng Xiao School of Physics and Technology Key Laboratory of Artificial Micro-and Nano-Structures of Ministry of EducationWuhan UniversityWuhan 430072China Wuhan research center for Infectious Diseases and Cancer Chinese Academy of Medical SciencesWuhan 430072China

Ultraviolet photodetectors(UV PDs)are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm *** present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides(TMDs),which can effectively be used to extend the optical response *** p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl_(4)as a light absorption layer on the surface of WS_(2.,significantly enhancing its UV photodetection *** 365 nm laser irradiation,WS_(2.PDs exhibit response speed of 2. ms/2. ms,responsivity of 660 mA/W,detectivity of 3.3×10^(11)Jones,and external quantum efficiency of 2.6%.Moreover,we successfully apply this doping method to other TMDs materials(such as MoS_(2.,MoSe_(2.,and WSe_(2.)and fabricate WS_(2. lateral p–n heterojunction PDs.

关键词： two-dimensional (2.) materials p-type doping transition metal dichalcogenides photodetectors

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Multistage microstructured Ionic Skin for Real-Time Vital Signs Monitoring and Human-Machine Interaction

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Energy & Environmental Materials 2024年第6期7卷 218-229页

作者： Xueke Wang Jinyu Zi Yi Chen Qiang Wu Zhimin Xiang Yongqiang Tu Peng Yang Yanfen Wan National center for International research on Photoelectric and Energy Materials Yunnan Key Laboratory for Micro/Nano Materials&TechnologyYunnan Key Laboratory of Electromagnetic Materials and DevicesSchool of Materials and EnergyYunnan UniversityKunming 650091China

Skin-like electronics research aiming to mimic even surpass human-like specific tactile cognition by operating perception-to-cognition-to-feedback of stimulus to build intelligent cognition systems for certain imperceptible or inappreciable signals was so ***,we constructed an all-in-one tri-modal pressure sensing wearable device to address the issue of power supply by integrating multistage microstructured ionic skin(MM i-skin)and thermoelectric self-power staffs,which exhibits high sensitivity *** MM i-skin with multi-stage“interlocked”configurations achieved precise recognition of subtle signals,where the sensitivity reached up to 3.95 kPa^(−1),as well as response time of 46 ms,cyclic stability(over 1500 cycles),a wide detection range of 0–2.0 ***,we developed the thermoelectricity {2.generator,piezoelectricity {2.generator,and piezocapacitive sensing as an integrated tri-modal pressure sensing,denoted as P-iskin,T-iskin,and C-iskin,*** multifunctional ionic skin enables real-time monitoring of weak body signals,rehab guidance,and robotic motion recognition,demonstrating potential for Internet of things(IoT)applications involving the artificial intelligence-motivated sapiential healthcare Internet(SHI)and widely distributed human-machine interaction(HMI).

关键词： bio-template method integrated device ionic skin skin-like microstructure tri-modal pressure sensing

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Implantable probe with integrated reference electrode for in situ neural signal and calcium ion monitoring

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Bio-Design and Manufacturing 2024年第4期7卷 591-595页

作者： Junyu Xiao Mengfei Xu Longchun Wang Bin Yang Jingquan Liu National Key Laboratory of Advanced micro and nano Manufacture Technology Shanghai Jiao Tong UniversityShanghai 200240China Department of micro/nano Electronics Shanghai Jiao Tong UniversityShanghai 200240China

Monitoring the electrophysiology activity of neurons and blood calcium signals can enable a better understanding of disease-related neural system ***,currently,in situ calcium ion monitoring tools are scarce and exhibit low integration and limited *** this letter,we propose an implantable probe with an integrated in situ Ag/AgCl reference electrode(ISA/ARE)that can monitor action potential(AP)and Ca^(2.) concentrations.

关键词： neural electrode enable

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Spatially selective p-type doping for constructing lateral WS_(2. p-n homojunction via low-energy nitrogen ion implantation

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Light(Science & Applications) 2024年第6期13卷 1159-1169页

作者： Yufan Kang Yongfeng Pei Dong He Hang Xu Mingjun Ma Jialu Yan Changzhong Jiang Wenqing Li Xiangheng Xiao School of Physics and Technology Key Lab of Artificial Micro-and Nano-Structures of Ministry of EducationWuhan UniversityWuhanChina

The construction of lateral p-n junctions is very important and challenging in two-dimensional(2.)semiconductor manufacturing *** researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2. ***,interface pollution and large area scalability are challenges that are difficult to overcome with vertical stacking *** 2. lateral p-n homojunction is an effective strategy to address these *** selective p-type doping of 2. semiconductors is expected to construct lateral p-n *** this work,we have developed a low-energy ion implantation system that reduces the implanted energy to 300 ***-energy implantation can form a shallow implantation depth,which is more suitable for modulating the electrical and optical properties of 2. ***,we utilize low-energy ion implantation to directly dope nitrogen ions into few-layer WS_(2. and successfully realize a precise regulation for WS_(2. with its conductivity type transforming from n-type to bipolar or even p-type ***,the universality of this method is demonstrated by extending it to other 2. semiconductors,including WSe_(2.,SnS_(2. and MoS_(2..Based on this method,a lateral WS_(2. p-n homojunction is fabricated,which exhibits significant rectification characteristics.A photodetector based on p-n junction with photovoltaic effect is also prepared,and the open circuit voltage can reach to 0.39 *** work provides an effective way for controllable doping of 2. semiconductors.

关键词： implantation doping Spatial

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