Spatially selective p-type doping for constructing lateral WS_(2) p-n homojunction via low-energy nitrogen ion implantation
作者机构：School of Physics and TechnologyKey Lab of Artificial Micro-and Nano-Structures of Ministry of EducationWuhan UniversityWuhanChina
出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)
年 卷 期：2024年第13卷第6期
页 面：1159-1169页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
基 金：financially supported by the National Natural Science Foundation of China (12025503,U23B2072,12074293,and 12275198) the Fundamental Research Funds for the Center Universities (2042024kf0001 and 2042023kf0196)
主 题：implantation doping Spatial
摘 要：The construction of lateral p-n junctions is very important and challenging in two-dimensional(2D)semiconductor manufacturing *** researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2D ***,interface pollution and large area scalability are challenges that are difficult to overcome with vertical stacking *** 2D lateral p-n homojunction is an effective strategy to address these *** selective p-type doping of 2D semiconductors is expected to construct lateral p-n *** this work,we have developed a low-energy ion implantation system that reduces the implanted energy to 300 ***-energy implantation can form a shallow implantation depth,which is more suitable for modulating the electrical and optical properties of 2D ***,we utilize low-energy ion implantation to directly dope nitrogen ions into few-layer WS_(2) and successfully realize a precise regulation for WS_(2) with its conductivity type transforming from n-type to bipolar or even p-type ***,the universality of this method is demonstrated by extending it to other 2D semiconductors,including WSe_(2),SnS_(2) and MoS_(2).Based on this method,a lateral WS_(2) p-n homojunction is fabricated,which exhibits significant rectification characteristics.A photodetector based on p-n junction with photovoltaic effect is also prepared,and the open circuit voltage can reach to 0.39 *** work provides an effective way for controllable doping of 2D semiconductors.
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