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Chinese Physics B 2021年第7期30卷 467-477页

作者： Yancai Xu Rong Zhou Qin Yin Jiao Li Guoxiang Si Hongbin Zhang School of Physics and Electronics Shandong Normal UniversityJinan 250014China

Organic/inorganic hybrid van der waals heterostructure with an atomically abrupt interface has attracted great research interests within the field of multifunctional electronic and optoelectronic *** integration of organic rubrene films with inorganic Si semiconductors can avoid the atomic mutual-diffusion at the interface,and provide the possibility of forming two-dimensional van der waals heterojunction accompanied with the type-II energy band alignment,due to the transfer behaviors of majority carriers at the *** this study,the high-quality rubrene/Si van der waals heterostructure with an electronically abrupt junction was prepared,and a self-powered photodetector was then constructed based on this hybrid *** photodetector demonstrated an excellent switching response to the 1064 nm monochromatic light with large on/off current ratio of 7.0×10^(3),the maximum photocurrent of 14.62 m A,the maximum responsivity of 2.07 A/W,the maximum detectivity of 2.9×10^(11)Jones,and a fast response time of 13.0μ*** study offers important guidance for preparing high-quality rubrene/Si hybrid van der waals heterostructure with desirable band alignment,and the designed heterojunction photodetector has an important application prospect in the field of multifunctional optoelectronics.

关键词： rubrene van der waals heterojunction photodetector band alignment

Bi2O2Se/BP van der waals heterojunction for high performance broadband photodetector

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Science China(Information Sciences) 2021年第4期64卷 142-148页

作者： Xing LIU Wenhui WANG Fang YANG Shaopeng FENG Zhenliang HU Junpeng LU Zhenhua NI School of Physics Southeast University

Broadband photodetector has wide applications in the field of remote sensing,health monitoring and medical ***-dimensional（2D） materials with narrow bandgaps have shown enormous potential in broadband ***,the device performance is often restricted by the high dark ***,we demonstrate a high performance broadband photodetector by constructing Bi2O2Se/BP van der waals *** device exhibits a p-n diode behavior with a current rectification ratio of ～*** from the low dark current of the heterojunction and the effective carrier separation,the device achieves the responsivity（R） of～500 A/W,～4.3 A/W and～2.3 A/W at 700 nm,1310 nm and 1550 nm,*** specific detectivity（D*） is up to ～2.8 × 1011Jones（700 nm）,～2.4 × 10～9 Jones（1310 nm）and ～1.3 × 10～9 Jones（1550 nm）.Moreover,the response time is ～9 ms,which is more than 20 times faster than that of individual BP（～190 ms） and Bi2O2Se（～180 ms） devices.

关键词： Bi2O2Se/BP van der waals heterojunction broadband photodetector low dark current narrow bandgap

Mixed-dimensional van der waals heterojunction-enhanced Raman scattering

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Nano Research 2022年第1期15卷 637-643页

作者： Mingze Li Yunjia Wei Xingce Fan Guoqun Li Qi Hao Teng Qiu School of Physics Southeast UniversityNanjing 211189China

van der waals heterojunctions(vdWHs)provide an excellent material system for the research of heterojunction-enhanced Raman scattering(HERS)due to their complexity and ***,the traditional two-dimensional vdWHs are not conducive to the full utilization of near-field light due to the limitation of single ***,we fabricate T-shaped mixed-dimensional SnSe_(2)/ReS_(2) vdWHs via chemical vapor deposition and wetting transfer method,and demonstrate that the mixed-dimensional vdWHs can be used as ultrasensitive HERS chips based on the effective photo-induced charge ***,the radiative energy transfer effect enhanced by near-field light further magnifies the HERS signals,improving the detection limit of rhodamine 6G(R6G)to femtomolar ***,we demonstrate that the ultrasensitive screening of crystal violet in multicomponent solutions adsorbed on SnSe_(2)/ReS_(2) vdWHs can be achieved by adjusting the laser wavelength,which has not been achieved by noble metal *** work provides new insights into the mixed-dimensional vdWHs and demonstrates the great application potential of T-shaped heterojunctions.

关键词： van der waals heterojunction enhanced Raman scattering photo-induced charge transfer radiative energy transfer Raman spectroscopic screening

ZnSb/Ti_(3)C_(2)T_(x)MXene van der waals heterojunction for flexible near-infrared photodetector arrays

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Journal of Semiconductors 2024年第5期45卷 99-105页

作者： Chuqiao Hu Ruiqing Chai Zhongming Wei La Li Guozhen Shen State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronic Engineering University of Chinese Academy of SciencesBeijing 100049China School of Integrated Circuits and Electronics Beijing Institute of TechnologyBeijing 100081China

Two-dimension(2D)van der waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)***,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene based flexible NIR photodetector array via a facile photolithography *** single ZnSb/Ti_(3)C_(2)T_(x)photodetector exhibited a high light-to-dark current ratio of 4.98,fast response/recovery time(2.5/1.3 s)and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti_(3)C_(2)T_(x)MXene nanoflakes,and the formed 2D van der waals *** polyethylene terephthalate(PET)substrate enables the ZnSb/Ti_(3)C_(2)T_(x)photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending ***,the ZnSb/Ti_(3)C_(2)T_(x)photodetectors were integrated into a 26×5 device array,realizing a NIR image sensing application.

关键词： ZnSb nanoplates Ti_(3)C_(2)T_(x)MXene van der waals heterojunction flexible photodetector image sensing

Record high photoresponse observed in CdS-black phosphorous van der waals heterojunction photodiode

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Science China Materials 2020年第8期63卷 1570-1578页

作者： Muhammad Zubair Chenguang Zhu Xingxia Sun Huawei Liu Biyuan Zheng Jiali Yi Xiaoli Zhu Dong Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China

Two-dimensional(2D)materials have recently received great attention for their atomic thin thickness and thus derived outstanding electrical,optical and optoelectronic ***,the dangling-bond-free surfaces of 2D materials enable the direct integration of different materials with various properties through van der waals(vdW)forces into vdW heterostructures,providing new opportunities for constructing new type devices with superior *** this study,we report the vertical assembly of n-type CdS and p-type BP into p-n *** electrically tunable heterojunction device shows a high current rectifying ratio up to8×103at a low bias voltage range of±1 V and an ideality factor of *** interestingly,the CdS/BP vdW heterojunction exhibits an ultra-high photoresponsivity up to 9.2×105A W-1and an ultra-high specific detectivity of 3.2×1013Jones with a low bias voltage of 1.0 V,which is among the highest in the reported results of 2D *** operated at a self-powered mode,the device also exhibits excellent photodetection performances with a high photoresponsivity of0.27 A W-1and a high external quantum efficiency of 76%.Time-resolved photoresponse characterizations indicate that the device possesses a fast response time of about 10 *** developed CdS/BP vdW heterojunctions will find potential applications in the next-generation nanoscale electronics and optoelectronics applications.

关键词： CdS/BP van der waals heterojunction type tunable electrical properties photovoltaic self-driven photodetector

S‐Scheme 2D/2D Bi_(2)MoO_(6)/BiOI van der waals heterojunction for CO_(2) photoreduction

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Chinese Journal of Catalysis 2022年第7期43卷 1657-1666页

作者： Zhongliao Wang Bei Cheng Liuyang Zhang Jiaguo Yu Youji Li S.Wageh Ahmed A.Al‐Ghamdi State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of TechnologyWuhan 430070HubeiChina Laboratory of Solar Fuel Faculty of Materials Science and ChemistryChina University of GeosciencesWuhan 430074HubeiChina College of chemistry and chemical engineering Jishou UniversityJishou 416000HunanChina Department of Physics Faculty of ScienceKing Abdulaziz UniversityJeddah 21589Saudi Arabia

Reducing CO_(2) to hydrocarbon fuels by solar irradiation provides a feasible channel for mitigating excessive CO_(2) emissions and addressing resource ***,severe charge recombi‐nation and the high energy barrier for CO_(2) photoreduction on the surface of photocatalysts com‐promise the catalytic ***,a 2D/2D Bi_(2)MoO_(6)/BiOI composite was fabricated to achieve improved CO_(2) photoreduction *** transfer in the composite was facilitated by the van der waals heterojunction with a large‐area *** function calculation demon‐strated that S‐scheme charge transfer is operative in the composite,and effective charge separation and strong redox capability were revealed by time‐resolved photoluminescence and electron para‐magnetic resonance ***,the intermediates of CO_(2) photoreduction were identi‐fied based on the in situ diffuse reflectance infrared Fourier‐transform *** functional theory calculations showed that CO_(2) hydrogenation is the rate‐determining step for yielding CH_(4) and *** Bi_(2)MoO_(6) into the composite further decreased the energy barrier for CO_(2) photoreduction on BiOI by 0.35 *** study verifies the synergistic effect of the S‐scheme heterojunction and van der waals heterojunction in the 2D/2D composite.

关键词： 2D/2D S‐scheme heterojunction van der waals heterojunction CO_(2)photoreduction

Highly efficient tunable photodetector with a bipolar response in van der waals heterojunctions

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Science China(Technological Sciences) 2024年第2期67卷 639-646页

作者： SHI ChaoFan ZHANG Shi XIAO KeNing ZHANG LiBo HAN Li ZHU YuLin TANG WeiWei LIU ChangLong LI GuanHai CHEN XiaoShuang College of Physics and Optoelectronic Engineering Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of Sciences Hangzhou310024China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

The heterojunction integration of two-dimensional(2D)materials via van der waals(vdW)forces,unencumbered by lattice and processing constraints,constitutes an efficacious approach to enhance the overall optoelectronic performance of photodetectors,due to an assortment of distinctive light-matter ***,vdW heterojunction photodetectors based on transition metal dichalcogenides(TMDs)face an inevitable trade-off between low dark currents and high responsivity,curtailing the application potential of myriad novel optoelectronic components in sensing,spectral,and communication *** this study,we present the successful actualization of a highly sensitive,self-powered,and gate-tunable bipolar response *** mechanisms underlying photocurrent generation were scrutinized via bias-,power-,and position-dependent mapping photoresponse measurements,identifying the photovoltaic effect,which is attributable to the Schottky junction’s built-in electric field,as the predominant *** prototype Au-WS2-graphene photodetector exhibits a remarkable light on/off ratio of 1.2×10^(6),a specific detectivity of 6.12×10^(11)cm H^(z1/2)W^(-1)with 20μs response time at 638 *** wide gate-tunable responsivity provides an adjustability scope,ranging from 0.9 to 3.1 A W^(-1).Notably,the device demonstrates an exceptional linear photocurrent response,with a linear dynamic range(LDR)value approximating 130 dB,which significantly surpasses that of other photodetectors based on TMDs.

关键词： WS2/graphene van der waals heterojunction gate-tunable bipolar response

Two-Dimensional Materials for Highly Efficient and Stable Perovskite Solar Cells

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Nano-Micro Letters 2024年第10期16卷 176-212页

作者： Xiangqian Shen Xuesong Lin Yong Peng Yiqiang Zhang Fei Long Qifeng Han Yanbo Wang Liyuan Han State Key Laboratory of Metal Matrix Composites Shanghai Jiao Tong UniversityShanghai 200240People's Republic of China Xinjiang Key Laboratory of Solid State Physics and Devices School of Physical Science and TechnologyXinjiang UniversityUrumqi 830046People's Republic of China Special Division of Environmental and Energy Science College of Arts and SciencesKomaba Organization for Educational ExcellenceUniversity of TokyoTokyo 153-8902Japan State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of TechnologyWuhan 430070People's Republic of China College of Chemistry Henan Institute of Advanced TechnologyZhengzhou UniversityZhengzhou 450001People's Republic of China Guangxi Key Laboratory of Optical and Electronic Materials and Devices Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of ResourcesSchool of Materials Science and EngineeringGuilin University of TechnologyGuilin 541004People's Republic of China

Perovskite solar cells(PSCs)offer low costs and high power conversion ***,the lack of long-term stability,primarily stemming from the interfacial defects and the sus-ceptible metal electrodes,hinders their practical *** the past few years,two-dimensional(2D)materials(e.g.,graphene and its derivatives,transitional metal dichalcogenides,MXenes,and black phosphorus)have been identified as a promising solution to solving these problems because of their dangling bond-free surfaces,layer-dependent electronic band structures,tunable functional groups,and inherent ***,recent progress of 2D material toward efficient and stable PSCs is summarized,including its role as both interface materials and *** discuss their beneficial effects on perovskite growth,energy level alignment,defect passivation,as well as blocking external *** particular,the unique properties of 2D materials to form van der waals heterojunction at the bottom interface are ***,perspectives on the further development of PSCs using 2D materials are provided,such as designing high-quality van der waals heterojunction,enhancing the uniformity and coverage of 2D nanosheets,and developing new 2D materials-based electrodes.

关键词： Perovskite solar cells Two-dimensional materials Interface engineering van der waals heterojunction Electrodes

Highly sensitive infrared polarized photodetector enabled by out-ofplane PSN architecture composing of p-MoTe_(2),semimetal-MoTe_(2)and n-SnSe_(2)

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Nano Research 2022年第6期15卷 5384-5391页

作者： Yiming Sun Jingxian Xiong Xuming Wu Wei Gao Nengjie Huo Jingbo Li Institute of Semiconductors South China Normal UniversityGuangzhou 510631China School of Physics Science and Technology Lingnan Normal UniversityZhanjiang 524048China

Leveraging the unique physical properties,two-dimensional(2D)materials have circumvented the disadvantages of conventional epitaxial semiconductors and held great promise for potential optoelectronic *** far,two main detector architectures including photodiode based on a van der waals P-N junction or Schottky junction and phototransistor based on individual 2D materials or hybrids have been well ***,a trade-off between responsivity and speed always exists in those technologies thus hindering the overall performance ***,we propose a new device concept by sandwiching the 2D anisotropic semimetal between p-type and n-type semiconductors in the out-of-plane direction,called PSN architecture,realizing the improvement of each parameter including broad spectral coverage,fast speed,high sensitivity,power-free and *** stack the p-type 2H-MoTe_(2),Weyl semimetal 1T-MoTe_(2)and n-type SnSe_(2)layer-by-layer constructing vertical sandwich structure where the top and bottom layers contribute to the internal built-in electric field,the intermediate layer can facilitate the exciton dissociation and act as infrared polarized light *** a result,this PSN device exhibits broadband photo-response from 405 to 1,550 nm without external bias *** optical communication band(1,310 nm),operating at self-driven mode and room temperature,the responsivity and detectivity can reach up to 64.2 mA·W^(–1)and 2.2×10^(11)Jones,respectively,along with fast speed on the order of ***,the device simultaneously exhibits exceptional detection capability for infrared polarized light,demonstrating the anisotropic photocurrent ratio of 1.55 at 1,310 nm and 2.02 at 1,550 nm,which is attributed to the strong in-plane optical anisotropy of middle 1T-MoTe_(2)*** work develops a new photodetector scheme with novel PSN architecture toward broadband,self-power,polarized light sensing and imaging modules.

关键词： self-powered broadband photodetector van der waals heterojunction PSN architecture

Fully depleted vdW heterojunction based high performance photovoltaic photodetector

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Journal of Materiomics 2023年第6期9卷 1039-1047页

作者： Yonghong Zeng Fanxu Meng Sidi Fan Pengfei Wang Cuiyun Kou Mingyi Sun Haiguo Hu Rui Cao Swelm Wageh Omar A.Al-Hartomy Abul Kalam Bowen Du Wenchao Ding Songrui Wei Zhinan Guo Qiuliang Wang Han Zhang College of Physics and Optoelectronic Engineering Institute of Microscale OptoelectronicsInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and TechnologyInterdisciplinary Center of High Magnetic Field Physics of Shenzhen UniversityShenzhen UniversityShenzhen518060China Guangzhou Key Laboratory of Sensing Materials and Devices Center for Advanced Analytical ScienceSchool of Chemistry and Chemical EngineeringGuangzhou UniversityGuangzhou510006China Department of Physics Faculty of ScienceKing Abdulaziz UniversityJeddah21589Saudi Arabia Research Center for Advanced Materials Science(RCAMS) Department of ChemistryCollege of ScienceKing Khalid UniversityP.O.Box 9004Abha61413Saudi Arabia Foshan Electrical and Lighting Co. LTD64 North Fenjiang RoadFoshanChina Institute of Electrical Engineering Chinese Academy of SciencesBeijing100190China Center of Characterization and Analysis Jilin Institute of Chemical TechnologyJilin132022China

van der waals(vdW)heterojunctions,with their unique electronic and optoelectronic properties,have become promising candidates for photodetector *** the contribution of the depletion region in vdW heterojunction,which would enhance both of the collection efficiency and speed of the photogenerated carriers,presents an effective strategy for achieving high performance vdW heterojunction ***,a fully depleted vdW heterojunction photodetector is built on two-dimensional(2D)semiconductor materials(GaTe and InSe)layered on a pattered bottom electrode in vertical structure,in which the generation and motion of carriers are exclusively achieved in the depletion *** to the intrinsic built-in electric field,the elimination of series resistance and the depletion region confinement of carriers,the as-fabricated photodetector exhibits prominent photovoltaic properties with a high open-circuit voltage of 0.465 V,as well as photoresponse characteristics with outstanding responsivity,detectivity and photoresponse speed of 63.7 A/W,3.88×10^(13)Jones,and 32.7 ms *** overall performance of this fully depleted GaTe/InSe vdW heterojunctions photodetectors are ranking high among the top level of 2D materials based *** indicates the device architecture can provide new opportunities for the fabrication of high-performance photodetectors.

关键词： Two-dimensional material van der waals heterojunction Fully depleted photodetector Photovoltaic