Fully depleted vdW heterojunction based high performance photovoltaic photodetector
作者机构：College of Physics and Optoelectronic EngineeringInstitute of Microscale OptoelectronicsInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and TechnologyInterdisciplinary Center of High Magnetic Field Physics of Shenzhen UniversityShenzhen UniversityShenzhen518060China Guangzhou Key Laboratory of Sensing Materials and DevicesCenter for Advanced Analytical ScienceSchool of Chemistry and Chemical EngineeringGuangzhou UniversityGuangzhou510006China Department of PhysicsFaculty of ScienceKing Abdulaziz UniversityJeddah21589Saudi Arabia Research Center for Advanced Materials Science(RCAMS)Department of ChemistryCollege of ScienceKing Khalid UniversityP.O.Box 9004Abha61413Saudi Arabia Foshan Electrical and Lighting Co.LTD64 North Fenjiang RoadFoshanChina Institute of Electrical EngineeringChinese Academy of SciencesBeijing100190China Center of Characterization and AnalysisJilin Institute of Chemical TechnologyJilin132022China
出 版 物：《Journal of Materiomics》 (无机材料学学报（英文）)
年 卷 期：2023年第9卷第6期
页 面：1039-1047页
核心收录：
学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学]
基 金：supported by the State Key Research Development Program of China(Grant No.2019YFB2203503) National Natural Science Fund(Grant Nos.61875138,61961136001,62104153,62105211 and U1801254) Natural Science Foundation of Guangdong Province(2018B030306038 and 2020A1515110373) Science and Technology Projects in Guangzhou(no.202201000002) Science and Technology Innovation Commission of Shenzhen(JCYJ20180507182047316 and 20200805132016001) Natural Science Foundation of Jilin Province(Grant No.YDZJ202201ZYTS429)
主 题：Two-dimensional material van der waals heterojunction Fully depleted photodetector Photovoltaic
摘 要：Van der Waals(vdW)heterojunctions,with their unique electronic and optoelectronic properties,have become promising candidates for photodetector *** the contribution of the depletion region in vdW heterojunction,which would enhance both of the collection efficiency and speed of the photogenerated carriers,presents an effective strategy for achieving high performance vdW heterojunction ***,a fully depleted vdW heterojunction photodetector is built on two-dimensional(2D)semiconductor materials(GaTe and InSe)layered on a pattered bottom electrode in vertical structure,in which the generation and motion of carriers are exclusively achieved in the depletion *** to the intrinsic built-in electric field,the elimination of series resistance and the depletion region confinement of carriers,the as-fabricated photodetector exhibits prominent photovoltaic properties with a high open-circuit voltage of 0.465 V,as well as photoresponse characteristics with outstanding responsivity,detectivity and photoresponse speed of 63.7 A/W,3.88×10^(13)Jones,and 32.7 ms *** overall performance of this fully depleted GaTe/InSe vdW heterojunctions photodetectors are ranking high among the top level of 2D materials based *** indicates the device architecture can provide new opportunities for the fabrication of high-performance photodetectors.
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