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Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors

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Journal of Materials Science & Technology 2022年第11期106卷 243-248页

作者： Jingyi Ma Xinyu Chen Yaochen Sheng Ling Tong Xiaojiao Guo Minxing Zhang Chen Luo Lingyi Zong Yin Xia Chuming Sheng Yin Wang Saifei Gou Xinyu Wang Xing Wu Peng Zhou David Wei Zhang Chenjian Wu Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai200433China In Situ Devices Center Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal UniversityShanghai 200241China School of Electronic Information Soochow UniversitySuzhou215006China

The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film.

关键词： two-dimensional semiconductor MoS_(2) Top gate Field effect transistor Logic inverter

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Stacking monolayers at will:A scalable device optimization strategy for two-dimensional semiconductors

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Nano Research 2022年第7期15卷 6620-6627页

作者： Xiaojiao Guo Honglei Chen Jihong Bian Fuyou Liao Jingyi Ma Simeng Zhang Xinzhi Zhang Junqiang Zhu Chen Luo Zijian Zhang Lingyi Zong Yin Xia Chuming Sheng Zihan Xu Saifei Gou Xinyu Wang Peng Gong Liwei Liu Xixi Jiang Zhenghua An Chunxiao Cong Zhijun Qiu Xing Wu Peng Zhou Xinyu Chen Ling Tong Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsZhangjiang Fudan International Innovation CenterFudan UniversityShanghai 200433China The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen 518057China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of MicroFudan UniversityShanghai 200433China State Key Laboratory of ASIC and System School of Information Science and EngineeringFudan UniversityShanghai 200433China Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering East China Normal UniversityShanghai 200241China Shenzhen Six Carbon Technology Shenzhen 518055China Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan UniversityShanghai 200433China

In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability,higher mobility,and broader spectral response.However,the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films.In this work,we propose a strategy of stacking MoS_(2) monolayers via a vacuum transfer method,by which one could obtain wafer-scale high-quality MoS_(2) films with the desired number of layers at will.The optical characteristics of these stacked ML-MoS_(2) films(>2L)indicate a weak interlayer coupling.The stacked MLMoS_(2) phototransistors show improved optoelectrical performances and a broader spectral response(approximately 300-1,000 nm)than that of 1L-MoS_(2).Additionally,the dual-gate ML-MoS_(2) transistors enable enhanced electrostatic control over the stacked ML-MoS_(2) channel,and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.

关键词： two-dimensional semiconductor field-effect transistors chemical vapor deposition(CVD)synthesis interlayer coupling vacuum transfer method dual-gate transistor

Substitutional doping in 2D transition metal dichalcogenides

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Nano Research 2021年第6期14卷 1668-1681页

作者： Leyi Loh Zhepeng Zhang Michel Bosman Goki Eda Department of Physics National University of Singapore2 Science Drive 3Singapore117551Singapore Department of Materials Science and Engineering National University of Singapore9 Engineering Drive 1Singapore117575Singapore Department of Chemistry National University of Singapore3 Science Drive 3Singapore117543Singapore Centre for Advanced 2D Materials National University of Singapore2 Science Drive 2Singapore117542Singapore

two-dimensional(2D)van der Waals transition metal dichalcogenides(TMDs)are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental studies.Similar to conventional semiconductors,substitutional doping is key to tailoring their electronic properties and enabling their device applications.Here,we review recent progress in doping methods and understanding of doping effects in group 6 TMDs(MX2,M=Mo,W;X=S,Se,Te),which are the most widely studied model 2D semiconductor system.Experimental and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n-or p-type dopants.This review will survey the impact of substitutional doping on the electrical and optical properties of these materials,discuss open questions,and provide an outlook for further studies.

关键词： substitutional doping transition metal dichalcogenide two-dimensional semiconductor acceptor donor

Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe_(2)

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National Science Open 2023年第1期2卷 24-34页

作者： Liheng An Zishu Zhou Xuemeng Feng Meizhen Huang Xiangbin Cai Yong Chen Pei Zhao Xi Dai Jingdi Zhang Wang Yao Junwei Liu Ning Wang Department of Physics and Center for Quantum Materials the Hong Kong University of Science and TechnologyHong KongChina William Mong Institute of Nano Science and Technology the Hong Kong University of Science and TechnologyHong KongChina Department of Physics University of Hong KongHong KongChina

We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe_(2) in antiparallel interface stacking geometry,where local centrosymmetry of atomic registries at the twist interface does not favor the spontaneous electronic polarizations as recently observed in the parallel interface stacking geometry.The unconventional ferroelectric behaviors probed by electronic transport measurement occur at half filling insulating states at 1.5 K and gradually disappear at about 40 K.Single band Hubbard model based on the triangular moirélattice and the interlayer charge transfer controlled by insulating phase transition are proposed to interpret the formation of electronic polarization states near half filling in twisted WSe_(2) devices.Our work highlights the prominent role of many-body electronic interaction in fostering novel quantum states in moiré-structured systems.

关键词： two-dimensional semiconductor twist moiré ferroelectricity electron interaction electronic transport

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Valley excitons in two-dimensional semiconductors

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National Science Review 2015年第1期2卷 57-70页

作者： Hongyi Yu Xiaodong Cui Xiaodong Xu Wang Yao Department of Physics The University of Hong Kong Center of Theoretical and Computational Physics The University of Hong Kong Department of Physics University of Washington Department of Material Science and Engineering University of Washington

Monolayer group-VIB transition-metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. he atractive properties include the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large efective masses. he physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges and the valley-dependent optical selection rules for interband transitions. Here, we give a brief overview of the experimental and theoretical indings on excitons in two-dimensional transition-metal dichalcogenides,with focus on the novel properties associated with their valley degrees of freedom.

关键词： exciton valley physics two-dimensional semiconductor transition metal dichalcogenides

High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure

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Journal of semiconductors 2020年第8期41卷 52-58页

作者： Chang Li Cheng Chen Jie Chen Tao He Hongwei Li Zeyuan Yang Liu Xie Zhongchang Wang Kai Zhang Nano Science and Technology Institute University of Science and Technology of ChinaSuzhou 215123China i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China School of Materials Science and Engineering Shanghai UniversityShanghai 200444China CAS Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science&TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro-Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy(SZ)Shenzhen UniversityShenzhen 518060China International Iberian Nanotechnology Laboratory(INL) Avenida Mestre Jose Veiga s/nBraga 4715-330Portugal

Black phosphorous(BP),an excellent two-dimensional(2D)monoelemental layered p-type semiconductor material with high carrier mobility and thickness-dependent tunable direct bandgap structure,has been widely applied in various devices.As the essential building blocks for modern electronic and optoelectronic devices,high quality PN junctions based on semiconductors have attracted widespread attention.Herein,we report a junction field-effect transistor(JFET)by integrating narrow-gap p-type BP and ultra-wide gap n-typeβ-Ga2O3 nanoflakes for the first time.BP andβ-Ga2O3 form a vertical van der Waals(vdW)heterostructure by mechanically exfoliated method.The BP/β-Ga2O3 vdW heterostructure exhibits remarkable PN diode rectifying characteristics with a high rectifying ratio about 107 and a low reverse current around pA.More interestingly,by using the BP as the gate andβ-Ga2O3 as the channel,the BP/β-Ga2O3 JFET devices demonstrate excellent n-channel JFET characteristics with the on/off ratio as high as 107,gate leakage current around as low as pA,maximum transconductance(gm)up to 25.3μS and saturation drain current(IDSS)of 16.5μA/μm.Moreover,it has a pinch-off voltage of–20 V and a minimum subthreshold swing of 260 mV/dec.These excellent n-channel JFET characteristics will expand the application of BP in future nanoelectronic devices.

关键词： two-dimensional semiconductor black phosphorous β-gallium oxide vdWs heterostructure junction field-effect transistor

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