Valley excitons in two-dimensional semiconductors
Valley excitons in two-dimensional semiconductors作者机构:Department of PhysicsThe University of Hong Kong Center of Theoretical and Computational PhysicsThe University of Hong Kong Department of PhysicsUniversity of Washington Department of Material Science and EngineeringUniversity of Washington
出 版 物:《National Science Review》 (国家科学评论(英文版))
年 卷 期:2015年第2卷第1期
页 面:57-70页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:support by the Croucher Foundation(Croucher Innovation Award),the University of Hong Kong(OYA),and the RGC of Hong Kong(HKU17305914P) support by RGC(HKU9/CRF/13G)and UGC(AoE/P-04/08)of Hong Kong support from DoE,BES,Materials Science and Engineering Division(DE-SC0008145) the National Science Foundation(DMR-1150719),and the National Science Foundation,Oice of Emerging Frontiers in Research and Innovation(EFRI-1433496)
主 题:exciton valley physics two-dimensional semiconductor transition metal dichalcogenides
摘 要:Monolayer group-VIB transition-metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. he atractive properties include the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large efective masses. he physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges and the valley-dependent optical selection rules for interband transitions. Here, we give a brief overview of the experimental and theoretical indings on excitons in two-dimensional transition-metal dichalcogenides,with focus on the novel properties associated with their valley degrees of freedom.