Substitutional doping in 2D transition metal dichalcogenides

作     者：Leyi Loh Zhepeng Zhang Michel Bosman Goki Eda Leyi Loh;Zhepeng Zhang;Michel Bosman;Goki Eda

作者机构：Department of PhysicsNational University of Singapore2 Science Drive 3Singapore117551Singapore Department of Materials Science and EngineeringNational University of Singapore9 Engineering Drive 1Singapore117575Singapore Department of ChemistryNational University of Singapore3 Science Drive 3Singapore117543Singapore Centre for Advanced 2D MaterialsNational University of Singapore2 Science Drive 2Singapore117542Singapore 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2021年第14卷第6期

页      面：1668-1681页

核心收录：

学科分类：08[工学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：the Ministry of Education(MOE),Singapore,under AcRF Tier 3(MOE2018-T3-1-005) the Singapore National Research Foundation for funding the research under medium-sized centre programme.M.B.acknowledges support from MOE’s AcRF Tier 1(R-284-000-179-133) 

主　　题：substitutional doping transition metal dichalcogenide two-dimensional semiconductor acceptor donor 

摘      要：Two-dimensional(2D)van der Waals transition metal dichalcogenides(TMDs)are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental *** to conventional semiconductors,substitutional doping is key to tailoring their electronic properties and enabling their device ***,we review recent progress in doping methods and understanding of doping effects in group 6 TMDs(MX2,M=Mo,W;X=S,Se,Te),which are the most widely studied model 2D semiconductor *** and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n-or p-type *** review will survey the impact of substitutional doping on the electrical and optical properties of these materials,discuss open questions,and provide an outlook for further studies.