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A threshold voltage and drain current model for symmetric dual-gate amorphous In GaZnO thin film transistors

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Science China(Information Sciences) 2018年第2期61卷 194-203页

作者： Minxi CAI Ruohe YAO School of Electronic and Information Engineering South China University of Technology

Based on the drift-diffusion theory, a simple threshold voltage and drain current model for symmetric dual-gate(DG) amorphous In Ga Zn O(a-IGZO) thin film transistors(TFTs) is developed. In the subthreshold region, most of the free electrons are captured by trap states in the bandgap of a-IGZO, thus the ionized trap states are the main contributor to the diffusion component of device drain current. Whereas in the above-threshold region, most of the trap states are ionized, and free electrons increase dramatically with gate voltage, which in turn become the main source of the drift component of device drain current. Therefore,threshold voltage of DG a-IGZO TFTs is defined as the gate voltage where the diffusion component of drain current equals the drift one, which can be determined with physical parameters of a-IGZO. The developed threshold voltage model is proved to be consistent with trap-limited conduction mechanism prevailing in a-IGZO, with the effect of drain bias being also taken into account. The gate overdrive voltage-dependent mobility is well modeled by the derived threshold voltage, and comparisons of the obtained drain current with experiment data show good verification of our model.

关键词： amorphous In Ga Zn O drift-diffusion current dual-gate thin film transistors threshold voltage

Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

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Chinese Physics B 2017年第12期26卷 587-590页

作者：齐栋宇张冬利王明湘 Department of Microelectronics Soochow University Suzhou 215006 China

Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-metal metal-oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction. The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the back-channel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device （L=2 μm）. It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region.

关键词： amorphous indium-gallium-zinc oxide thin film transistors positive bias stress hump

Effect of active layer deposition temperature on the performance of sputtered amorphous In–Ga–Zn–O thin film transistors

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Journal of Semiconductors 2014年第1期35卷 34-39页

作者：吴杰施俊斐董承远邹忠飞陈宇霆周大祥胡哲詹润泽 Center for Opto-Electronic Materials and Devices National Engineering Lab of TFT-LCD Materials and TechnologiesShanghai Jiao Tong University Infovision Optoelectronics (Kunshan) Co. Ltd

The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO （a-IGZO） thin film transistors （TFTs） is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as ＂optimized-annealed＂ are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150℃ while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and Ols spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films, Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature.

关键词： thin film transistors amorphous oxide semiconductors magnetron sputtering deposition temperature

Homojunction structure amorphous oxide thin film transistors with ultra-high mobility

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Journal of Semiconductors 2023年第5期44卷 19-26页

作者： Rongkai Lu Siqin Li Jianguo Lu Bojing Lu Ruqi Yang Yangdan Lu Wenyi Shao Yi Zhao Liping Zhu Fei Zhuge Zhizhen Ye State Key Laboratory of Silicon Materials Key Laboratory for Biomedical Engineering of Ministry of EducationSchool of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials Institute of WenzhouZhejiang UniversityWenzhou 325006China Department of Electronic Science and Technology College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China Ningbo Institute of Materials Technology and Engineering Chinese Academy of SciencesNingbo 315201China

Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/*** are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect *** research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.

关键词： thin film transistors homojunction carrier mobility amorphous oxides

Theory and Practice of“Striping”for Improved ON/OFF Ratio in Carbon Nanonet thin film transistors

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Nano Research 2009年第2期2卷 167-175页

作者： Ninad Pimparkar Qing Cao John A.Rogers Muhammad A.Alam School of Electrical and Computer Engineering Purdue UniversityWest LafayetteIndiana 47907-1285USA Department of Chemistry Materials and Science Engineering Electrical and Computer Engineering Beckman Institute Frederick and Seitz Materials Res.Lab University of IllinoisUrbanaIL 61801USA

A new technique to reduce the influence of metallic carbon nanotubes(CNTs)relevant for large-scale integrated circuits based on CNT-nanonet transistorsis proposed and ***,electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors;however,the corresponding degradation in ON-current has made these techniques somewhat ***,we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called“striping”;this allows fabrication of transistors with ON/OFF ratio>1000 and ON-current degradation no more than a factor of *** offer first principle numerical models,experimental confirmation,and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.

关键词： Nanonet Carbon nanotube flexible electronics thin film transistors

ADO-phosphonic acid self-assembled monolayer modified dielectrics for organic thin film transistors

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Journal of Semiconductors 2014年第10期35卷 41-44页

作者：李哲峰罗贤叶 School of Chemistry and Chemical Engineering Chongqing University

This study explores a strategy of using the phosphonic acid derivative （11-（（12-（anthracen-2- yl）dodecyl）oxy）-11-oxoundecyl） phosphonic acid （ADO-phosphonic acid） as self-assembled monolayers （SAMs） on a Si/SiO2 surface to induce the crystallization ofrubrene in vacuum deposited thin film transistors, which showed a field-effect mobility as high as 0.18 cm2/（V.s）. It is found that ADO-phosphonic acid SAMs play a unique role in modulating the morphology ofrubrene to form a crystalline film in the thin-film transistors.

关键词： thin film transistors self-assembled monolayer phosphonic acid derivative

Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

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Journal of Semiconductors 2015年第4期36卷 40-43页

作者： SubhraChowdhury SwarnabhaChattaraj DhrubesBiswas ParagjyotiGogoi RajibSaikia SanjibChangmai thin film Laboratory Department of Physics Sibsagar College Joysagar-785665 Assam India

ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors （TFTs）. The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al203 as the gate insulator and AI as the source, drain and gate electrodes. The TFTs were annealed in air at 500℃ for 1 h. The TFTs with a 50μm channel length exhibited a high field-effect mobility of 0.45 cm2/（V.s） and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 10 6, respectively.

关键词： chemical bath deposition thin film transistors electrical properties

Finite element analysis of temperature distribution of polycrystalline silicon thin film transistors under self-heating stress

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Frontiers of Electrical and Electronic Engineering in China 2009年第2期4卷 227-233页

作者： Huaisheng WANG Mingxiang WANG Zhenyu YANG Department of Microelectronics Soochow UniversitySuzhou 215021China

The temperature distribution of typical n-type polycrystalline silicon thin film transistors under selfheating(SH)stress is studied by finite element *** both steady-state and transient thermal simulation,the influence of device power density,substrate material,and channel width on device temperature distribution is *** study is helpful to understand the mechanism of SH degradation,and to effectively alleviate the SH effect in device operation.

关键词： finite element analysis(FEA) temperature distribution thin film transistors self-heating steady-state transient state

Ultralow-Voltage Electric-Double-Layer Oxide-Based thin-film transistors with Faster Switching Response on Flexible Substrates

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Chinese Physics Letters 2014年第7期31卷 218-221页

作者：张进吴国栋 Wuhan National Laboratory for Optoelectronics School of Optoelectronic Science and Engineering Huazhong University of Science and Technology Wuhan 430074 School of Electronic Science and Engineering Nanjing University Nanjing 210093 Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201

Phosphosilicate glass （PSG） electrolyte films are deposited by improving the content of phosphorus doping during plasma-enhanced chemical vapor deposition, and a fast electric-double-layer （EDL） polarization response of 100 kHz is measured. The mechanism of the fast polarization response and EDL formation are investigated in detail. By using PSG electrolyte films as gate dielectrics, indium-zinc-oxide （1Z0） thin-film transistors （TFTs） are fabricated on flexible plastic substrates. Due to the huge EDL gate capacitance, such TFTs show only 0.8 V operation and excellent electrical performances with a large current on/off ratio of 10^7, low subthreshold swing of 72 m V/decade and high Eeld-effect mobility of 16.76 cm^2 /V·s. More importantly, the devices exhibit a fast switching response above 100Hz. Our results demonstrate that such PSG gated TFTs take a great step for low-power flexible oxide electronics application.

关键词： thin film transistors