Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

作     者：SubhraChowdhury SwarnabhaChattaraj DhrubesBiswas ParagjyotiGogoi RajibSaikia SanjibChangmai 

作者机构：Thin Film Laboratory Department of Physics Sibsagar College Joysagar-785665 Assam India 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第4期

页      面：40-43页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the University Grants Commission  New Delhi  India  for providing financial assistance under the Major Research Project Program 

主　　题：chemical bath deposition thin film transistors electrical properties 

摘      要：ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors （TFTs）. The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al203 as the gate insulator and AI as the source, drain and gate electrodes. The TFTs were annealed in air at 500℃ for 1 h. The TFTs with a 50μm channel length exhibited a high field-effect mobility of 0.45 cm2/（V.s） and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 10 6, respectively.