Theory and Practice of“Striping”for Improved ON/OFF Ratio in Carbon Nanonet Thin Film Transistors

作     者：Ninad Pimparkar Qing Cao John A.Rogers Muhammad A.Alam 

作者机构：School of Electrical and Computer EngineeringPurdue UniversityWest LafayetteIndiana 47907-1285USA Department of Chemistry Materials and Science Engineering Electrical and Computer Engineering Beckman Institute Frederick and Seitz Materials Res.LabUniversity of IllinoisUrbanaIL 61801USA 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2009年第2卷第2期

页      面：167-175页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the Network for Computational Nanotechnology and the Lilly Foundation for financial support the National Science Foundation(NIRT-0403489) the Department of Energy(DE-FG02-07ER46471) Motorola,Inc.,the Frederick-Seitz Materials Research Laboratory,and the Center for Microanalysis of Materials(DE-FG02-07ER46453 and DE-FG02-07ER46471)at the University of Illinois 

主　　题：Nanonet Carbon nanotube flexible electronics thin film transistors 

摘      要：A new technique to reduce the influence of metallic carbon nanotubes(CNTs)relevant for large-scale integrated circuits based on CNT-nanonet transistorsis proposed and ***,electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors;however,the corresponding degradation in ON-current has made these techniques somewhat ***,we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called“striping;this allows fabrication of transistors with ON/OFF ratio1000 and ON-current degradation no more than a factor of *** offer first principle numerical models,experimental confirmation,and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.