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Nano Research 2019年第9期12卷 2373-2377页

作者： Virginia L. Johnson Auddy Anilao Kristie J. Koski Department of Chemistry University of CaliforniaDavisDavisCA 95616USA

Two-dimensional(2D)layered silicon telluride(SizTes)nanocrystals were compressed to 12 GPa using diamond anvil cell *** measurements show a color change from transparent red to opaque black indicating a semiconductor-to-metal phase *** scattering was used to observe the stiffening of the crystal lattice and subsequent phase behavior.A possible phase transition was *** 9.5±0.5 GPa evidenced by the disappearance of the Atg stretching *** was intercalated with elemental manganese to^1 at.%.Intercalation lowers the pressure of the proposed phase transition to 7.5±1 *** modes show both phonon stiffening and phonon softening,suggesting negative linear *** results provide fundamental insight into the high-pressure optical phonon behavior of silicon telluride and illuminate how a specific electron-donating intercalant can chemically alter pressure-dependent optical phonon behavior.

关键词： silicon telluride Si2Te3 high pressure diamond anvil cell two-dimensional(2D)layered material

Study of thermal expansion of mercury indium telluride crystals by XRD technique

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中国有色金属学会会刊：英文版 2009年第S3期19卷 776-779页

作者：王领航介万奇 Electronic Materials Research Laboratory Key Laboratory of Education MinistryXi'an Jiaotong University State Key Laboratory of Solidification Processing Northwestern Polytechnical University

The thermal expansion behavior of mercury indium telluride (MIT) crystals, Hg(3-3x)In2xTe3(x=0.5), based on X-ray diffraction experimental data is studied at 298-573 K. The variation of the lattice parameter of MIT crystals with temperature was determined and the thermal expansion coefficient was deduced to be 6.18×10-6 K-1. The results of the thermal expansion are fitted to polynomial expressions. It is found that the lattice parameter decreases quickly with temperature increasing at 298-330 K and then increases continuously up to 573 K. The minimum lattice parameter corresponds to a maximum shrinkage of 0.06%.

关键词： mercury indium telluride crystal growth XRD thermal expansion semiconductor material

Modeling Nd^(3+)-Yb^(3+)-Tm^(3+)-Er^(3+) Codoped telluride Glass Fiber for 0.4 to 2.0 μm Emission Spectra

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Journal of Shanghai Jiaotong university(Science) 2018年第3期23卷 352-359页

作者： NKONDE Sampa JIANG Chun State Key Laboratory of Advanced Optical Communication Systems and Networks~ Department of Electronic Engineering Shanghai Jiao Tong University Shanghai 200240 China

The modeling of rare-earth-doped fiber amplifier is accomplished by utilizing the rate and propagation equations of distinct levels for a laser medium. A complex theoretical model for neodymium （Nd3＋）, erbium （Er3＋）, thulium （Tm3＋） and ytterbium （Yb3＋） codoped telluride glass fiber covering 0.4--2.0 μm emission spectra is presented. The emission spectra of Nd3＋-Er3＋-Tm3＋-yb3＋ codoped telluride fiber are realized with the excitation of both 808 and 980 nm lasers pumped at 500 mW. Numerical methods are used to calculate the emission spectra covering 0.4--2.0 μm. With the Nd3＋, Tm3＋ and Yb3＋ ion concentrations fixed at 2 x 1020 ion/m3, the Er3＋ ion concentration optimized to 8 x 10^20 ion/m3 and the fiber length spanning from 0.5 to 2 m, a peak amplified spontaneous emission （ASE） power of 19.8 mW is attainable, and a minimum ASE power of 7.96 mW can also be achieved. The analytical techniques and results indicate that when a telluride codoped fiber with suitable ion concentrations of Nd3＋, Er3＋, Tm3＋ and Yb3＋ is excited by both 980 and 808 nm pump lasers, 0.4-2.0 μm emission spectra are attainable for vast optical applications.

关键词： telluride codoped fiber rare-earth-doped fiber optical communication

Electrochemical Deposition and Optimization of Thermoelectric Nanostructured Bismuth telluride Thick Films

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Engineering（科研） 2011年第6期3卷 659-667页

作者： Hesham M. A. Soliman Abdel-Hady B. Kashyout 不详

Bismuth telluride thick films are suitable for thermoelectric (TE) devices covering large areas and operating at small-to-moderate temperature differences (20 - 200 K). High efficiency and high coefficient of performance (COP) are expected to be achieved by using thick films in some cooling applications. Bismuth telluride thick films fabrication have been achieved with Galvanostatic and Potentionstatic deposition. Stoichiometric bismuth telluride thick film was obtained by Galvanostatic deposition at current density of 3.1 mAcm-2. Bismuth telluride films with average growth rate of 10 μmh-1 and different composition were obtained. Effects of current density and composition of electrolyte in Galvanostatic deposition were studied. The current density affected the film compactness, where films deposited at lower current density were more compact than those deposited at higher current density. The morphology of the films did not depend on the current density, but chemical composition was observed when different composition of electrolyte was used. Effects of distance between electrodes, composition of electrolyte solution, and stirring in Potentionstatic deposition were studied. The shorter the distance between electrodes, the higher the electric field, thus the higher current density was applied and the deposited film was less compact. The current density increased more rapidly with stirring during electrodeposition which leads to less compact film. Through this study, films electrode-posited from solution containing 0.013 M Bi(NO3)3.5 H2O, 0.01 M TeO2 and 1 M HNO3 at 3.1 mA cm-2 for 6 hours without stirring and with interelectrode distance of 4.5 cm were free-standing with average film thickness of 60 μm and optimum film composition of Bi2Te3. The crystallite size of the later films was found to be around 4.3 nm using Scherrer’s equation from XRD patterns. Also, negative Seebeck coefficient for the same samples was revealed with an average value of -82 μV.K-1.

关键词： Bismuth telluride Thermoelectric Electrodeposition Nanostructure Thick Film

Fabrication and Characterization of PLD-Grown Bismuth telluride (Bi2Te3) and Antimony telluride (Sb2Te3) Thermoelectric Devices

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Journal of Electronics Cooling and Thermal Control 2017年第3期7卷 63-77页

作者： Ibrahim M.Abdel-Motaleb Syed M.Qadri Department of Electrical Engineering Northern Illinois UniversityDeKalbILUSA

We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.

关键词： Thermoelectric Devices Bismuth telluride Bi2Te3 Antimony telluride Sb2Te3 Pulsed Laser Deposition PLD Seebeck Effect

Structure Refinement of Samarium Tritellurides

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Chinese Journal of Structural Chemistry 1996年第4期15卷 267-269页

作者：池利生邓水全等 StateKeyLaboratoryofStructuralChemistry FujianInst StateKeyLaboratoryofStructura

The title compound was prepared from the corresponding elements(Sm, Te) using iodine as transport agent. The crystal structure was determined by the single crystal X-ray diffraction techniques with the crystal data as follows: SmTe3,M_r= 533. 15, orthorhombic. Cmcm, a=4. 323(2), b= 25. 613(3),c=4. 335(2) A,V=480. 0 A￣3, Z=4, D_x=7. 38 g/cm￣3, F(000) =872,μ= 300. 2 cm￣(-1), R=0. 061,Rw.=0. 066 for 660 observed(I≥3σ(I)) unique reflections. The compound is isostructural with NdTe_3￣[1].

关键词： synthesis telluride crystal structure

Transverse magnetoresistance peculiarities of thermoelectric Lu-doped Bi_2Te_3 compound due to strong electrical disorder

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Journal of Rare Earths 2019年第3期37卷 292-298页

作者： Oleg Ivanov Maxim Yaprintsev Elena Danshina Belgorod State University Belgorod State Technological University named after V.G.Shukhov

The n-type thermoelectric Bi_(1.9)Lu_(0.1)Te_3 was prepared by microwave-solvothermal method and spark plasma sintering. The magnetic field and temperature dependences of transverse magneto resistance measured within temperature 2-200 K interval allow finding the peculiarities characteristic for strongly disordered and inhomogeneous semiconductors. The first peculiarity is due to appearance of linear-inmagnetic field contribution to the total magneto resistance reflected in a crossover from quadratic magnetoresistance at low magnetic fields to linear magneto resistance at high magnetic fields. The linear magnetoresistance can result from the Hall resistance picked up from macroscopically distorted current paths due to local variations in stoichiometry of the compound studied. The second peculiarity is that both linear magnetoresistance magnitude and crossover field are functions of carrier mobility which is in agreement with the Parish and Littlewood model developed for disordered and inhomogeneous semiconductors. An increase in the mobility due to a decrease in temperature is accompanied by an increase in the magnetoresistance magnitude and a decrease in the crossover field. Finally, the third peculiarity is related to the remarkable deviation of the total magnetoresistance measured at various temperatures from the Kohler's rule. Presence of strong inhomogeneity and disorder in the Bi_(1.9)Lu_(0.1)Te_3 structure concluded from the magnetoresistance peculiarities can be responsible for the remarkable reduction in the total thermal conductivity of this compound.

关键词： Bismuth telluride Linear positive magnetoresistance Semiconductors Thermoelectric material Carrier mobility Kohler’s rule

Gold mineralization in the Guilaizhuang deposit,southwestern Shandong Province,China:Insights from phase relations among sulfides,tellurides,selenides and oxides

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Gold mineralization in the Guilaizhuang deposit,southwestern...

Anisotropic transport in a possible quasi-one-dimensional topological candidate:TaNi_(2)Te_(3)

中国科学院地质与地球物理研究所2014年度（第14届）学术年会

作者： Wen-Gang Xu Hong-Rui Fan Fang-Fang Hu M.Santosh Kui-Feng Yang Ting-Guang Lan Bo-Jie Wen Key Laboratory of Mineral Resources Institute of Geology and GeophysicsChinese Academy of Sciences China University of Geosciences(Beijing)

The Guilaizhuang gold deposit is composed of limestone- and breccia-type *** the limestone ores,gold is hosted by pyrite,As-bearing pyrite and arsenopyrite,whereas in the breccia ores,tellurides are the main gold *** often isomorphously substitutes for sulfur in sulfides in the limestone ores,but occurs as selenides in the breccia *** is the only oxide in the breccia ores,associated with barite and other *** this paper,the thermodynamic parameters,especially the Gibbs free energies of formation and reaction,of related sulfides,tellurides,selenides and oxides are computed to explain the distinct mineral styles in the limestone- and breccia-type *** construct the phase relations among minerals delineated by phase diagrams at 250 ℃,the temperature for gold precipitation in the Guilaizhuang *** to the phase relations between sulfides and selenides,we propose that gold has been transported as[Au(HS,HSe)]-,and released during rapid formation of pyrite,As-pyrite and arsenopyrite,at log/S(g) between —12.8 and— 11.4(250 ℃).In the breccia ores,log/Te(g) and log/Se(g) are constrained within —12.9 to —9.4,and —12.4 to —6.9(250 ℃),respectively,based on the mineral assemblages observed in the *** phase relations between tellurides and selenides indicate that calaverite,the only stable gold telluride mineral in nature,was not stable in the breccia ores at 250 ℃ during the gold *** on EMPA analysis,the so-called "calaverite" revealed from microscopic observations is in fact Au-Ag telluride,probably derived from the decomposition of sylvanite(AuAgTe) and petzite(AuAgTe),the only two stable Au-Ag tellurides in nature at high ***,we do not exclude the possibility that calaverite occurs in this deposit,which may have precipitated in early relatively high tellurium concentration stage preceding gold *** was not detected in gold-bearing tellurides,implying that selenide is unr

关键词： Gold mineralization Sulfide telluride Selenide Phase relation Guilaizhuang gold deposit China

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Tungsten 2023年第3期5卷 325-331页

作者： Yi Liu Chun-Qiang Xu Wen-He Jiao Ping-Gen Cai Bin Li Wei Zhou Bin Qian Xue-Fan Jiang Kalaivaman R Raman Sankar Xiang-Lin Ke Guang-Han Cao Xiao-Feng Xu Department of Applied Physics Zhejiang University of TechnologyHangzhou 310023China Department of Physics and Astronomy Michigan State UniversityEast LansingMI 48824-2320USA School of Physics and Key Laboratory of MEMS of the Ministry of Education Southeast UniversityNanjing 211189China Department of Physics Zhejiang University of Science and TechnologyHangzhou 310023China New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science Nanjing University of Posts and TelecommunicationsNanjing 210023China Department of Physics Changshu Institute of TechnologyChangshu 215500China Institute of Physics Academia SinicaTaipei 11529China Department of Physics Zhejiang UniversityHangzhou 310027China

We report on the solid-state synthesis and the strongly anisotropic transport properties of the ternary telluride TaNi_(2)Te_(3),whose three orthogonal resistivity coefficients exhibit a large ratio of 1.4:1:2294(14:1:2303) at 300 K(2 K),thereby demonstrating its quasi-one-dimensional(q1D) electronic *** Kohler’ s rule in different current/field configurations shows a moderate *** one dimensionality manifests itself in the needle-like shape of crystal,the large anisotropic resistivity and the flat Fermi surface normal to the chain ***,the first-principles calculations also provide evidence for the existence of the nontrivial topological carriers in this q1D *** calculation demonstrates that TaNi_(2)Te_(3) is a strong topological nontrivial material with topological indices(1;1 0 1) and its nontrivial topology is also evidenced from its bulk-surface *** study may therefore offer a new platform for engineering the topologically nontrivial phase in low-dimensional materials,in analogy to the recently discovered q1D topological TaNiTe_(5).

关键词： Topological materials-Quasi-one-dimensionality telluride

Approaching the minimum lattice thermal conductivity of p-type SnTe thermoelectric materials by Sb and Mg alloying

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Science Bulletin 2019年第14期64卷 1024-1030页

作者： Tiezheng Fu Jiazhan Xin Tiejun Zhu Jiajun Shen Teng Fang Xinbing Zhao State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang University

SnTe, as the nontoxic analogue to high-performance PbTe thermoelectric material, has captured the worldwide interest recently. Many triumphant instances focus on the strategies of band convergence, resonant doping, and nano-precipitates phonon scattering. Herein, the p-type SnTe-based materials Sn0.85-xSb0.15MgxTe (x=0-0.10) are fabricated and a combined effect of Sb and Mg is investigated. Sb alloying tunes the hole carrier concentration of SnTe and decreases the lattice thermal conductivity. Mg alloying leads to a nearly hundredfold rise of disorder parameter due to the large mass and strain fluctuations, and as a consequence the lattice thermal conductivity decreases further down to ~0.64Wm^-1K^-1 at 773K, close to the theoretical minimum of the lattice thermal conductivity (~0.50Wm^-1K^-1) of SnTe. In conjunction with the enhancement of the Seebeck coefficient caused by band convergence due to Mg alloying, the maximum zTmax reaches ~1.02 and the device zTdevice of ~0.50 at 773K for Sn0.79Sb0.15Mg0.06Te, suggesting this SnTe-based composition has a promising potential in intermediate temperature thermoelectric applications.

关键词： Tin telluride Thermoelectric materials Point defect scattering Band convergence