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Static characteristics and short channel effect in enhancement-mode AlN/GaN/AlN N-polar MISFET with self-aligned source/drain regions

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Journal of Semiconductors 2014年第12期35卷 43-47页

作者：李斌魏岚温才 School of Science Southwest University of Science and Technology

This paper aims to simulate the I–V static characteristic of the enhancement-mode（E-mode） Npolar GaN metal–insulator–semiconductor field effect transistor（MISFET） with self-aligned source/drain ***, with SILVACO TCAD device simulation, the drain–source current as a function of the gate–source voltage is calculated and the dependence of the drain–source current on the drain–source voltage in the case of different gate–source voltages for the device with a 0.62 m gate length is investigated. Secondly, a comparison is made with the experimental report. Lastly, the transfer characteristic with different gate lengths and different buffer layers has been performed. The results show that the simulation is in accord with the experiment at the gate length of 0.62 m and the short channel effect becomes pronounced as gate length decreases. The E-mode will not be held below a100 nm gate length unless both transversal scaling and vertical scaling are being carried out simultaneously.

关键词： GaN enhancement-mode short channel effect MISFET

Simulation study on short channel double-gate junctionless field-effect transistors

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Journal of Semiconductors 2013年第3期34卷 35-42页

作者：吴美乐靳晓诗揣荣岩刘溪 Jong-Ho Lee School of Information Science and Engineering Shenyang University of Technology School of EECS Eng and ISRC(Inter-University Semiconductor Research Center) Seoul National University Shinlim-Dong Kwanak-GuSeoul 151-742Korea

We study the characteristics of short channel double-gate(DG) junctionless(JL) FETs by device simulation. OutputⅠ-Ⅴcharacteristic degradations such as an extremely reduced channel length induced subthreshold slope increase and the threshold voltage shift due to variations of body doping and channel length have been systematically *** of electron concentration,electric field and potential in the body channel region are also *** with conventional inversion-mode(IM) FETs,which can demonstrate the advantages of JL FETs,have also been performed.

关键词： short channel effect double-gate junctionless field-effect transistor device simulation

Subthreshold behavior of AlInSb/InSb high electron mobility transistors

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Chinese Physics B 2015年第7期24卷 360-364页

作者： S.Theodore Chandra N.B.Balamurugan G.Lakshmi Priya S.Manikandan Department of Electronics and Communication Engineering Thiagarajar College of Engineering

We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Φdeff,minand the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.

关键词： scaling theory subthreshold behavior effective conducting path effect short channel effect

Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

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Journal of Semiconductors 2010年第8期31卷 78-83页

作者：李劲刘红侠李斌曹磊袁博 Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian University

For the first time,a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator（DMG SSOI） MOSFETs is *** investigate the improved short channel effect（SCE）,hot carrier effect（HCE）,drain-induced barrier-lowering（DIBL） and carrier transport efficiency for the novel structure *** analytical model takes into account the effects of different metal gate lengths,work functions,the drain bias and Ge mole fraction in the relaxed SiGe *** surface potential in the channel region exhibits a step potential,which can suppress SCE,HCE and ***,strained-Si and SOI structure can improve the carrier transport efficiency,with strained-Si being particularly ***, the threshold voltage model correctly predicts a＂rollup＂in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe *** validity of the two-dimensional analytical model is verified using numerical simulations.

关键词： SOI MOSFETs strained-Si dual-material gate short channel effect hot carrier effect the drain-induced barrier-lowering two-dimensional model

Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

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Chinese Physics B 2010年第10期19卷 492-498页

作者：李劲刘红侠李斌曹磊袁博 Key Laboratory for Wide Bandgap Semiconductor Devices Ministry of Education School of Microelectronics Xidian University

Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.

关键词： strained-Si gate stack double-gate MOSFETs short channel effect the drain-inducedbarrier-lowering

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack(TMGS) DG-MOSFET

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Chinese Physics B 2016年第10期25卷 518-524页

作者： Shweta Tripathi Department of Electronics & Communication Engineering Motilal Nehru National Institute of Technology

In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.

关键词： triple material symmetrical gate stack(TMGS) DG MOSFET gate stack short channel effect drain induced barrier lowering threshold voltage

Simulations of monolayer SiC transistors with metallic 1T-phase MoS_(2) contact for high performance application

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Chinese Physics B 2021年第11期30卷 495-500页

作者： Hai-Qing Xie Dan Wu Xiao-Qing Deng Zhi-Qiang Fan Wu-Xing Zhou Chang-Qing Xiang Yue-Yang Liu Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering School of Physics and Electronic ScienceChangsha University of Science and TechnologyChangsha 410114China School of Materials Science and Engineering&Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion Hunan University of Science and TechnologyXiangtan 411201China College of Information Science and Engineering Jishou UniversityJishou 416000China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

We preform a first-principles study of performance of 5 nm double-gated(DG)Schottky-barrier field effect transistors(SBFETs)based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS_(2) *** of the wide bandgap of SiC,the corresponding DG SBFETs can weaken the short channel *** calculated transfer characteristics also meet the standard of the high performance transistor summarized by international technology road-map for ***,the bilayer metallic 1T-phase MoS_(2) contacts in three stacking structures all can further raise the ON-state currents of DG SiC SBFETs in varying *** above results are helpful and instructive for design of short channel transistors in the future.

关键词： Schottky-barrier field effect transistor SiC band structure short channel effect

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

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Chinese Physics B 2014年第11期23卷 620-625页

作者： Shweta Tripathi Department of Electronics & Communication Engineering Motilal Nehru National Institute of Technology

An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.

关键词： dual-material-gate MOSFET lightly doped drain short channel effect threshold voltage

Unified MOSFET short channel Factor Using Variational Method

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Journal of Semiconductors 2000年第5期21卷 431-436页

作者：陈文松田立林李志坚清华大学北京 100084

A new natural gate length scale for MOSFET’s is presented using Variational Method. Comparison of the short channel effects is conducted for the uniform channel doping bulk MOSFET, intrinsic channel doping bulk MOSFET, SOI MOSFET and double gated MOSFET. And the results are verified by the 2D numerical simulation. Taken all the 2\|D effects on front gate dielectric, back gate dielectric and silicon film into account, the data validity of electrical equivalent oxide thickness is investigated by this model, as shows that it is valid only when the gate dielectric constant is relatively small.

关键词： Poisson’s equation variational method deep submicron MOSFET short channel effect