Subthreshold behavior of AlInSb/InSb high electron mobility transistors

作     者：S.Theodore Chandra N.B.Balamurugan G.Lakshmi Priya S.Manikandan 

作者机构：Department of Electronics and Communication EngineeringThiagarajar College of Engineering 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第7期

页      面：360-364页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the Council of Scientific&Industrial Research(CSIR) Government of India under the SRF Scheme(Sanction Letter No:08/237(0005)/2012-EMR-I) 

主　　题：scaling theory subthreshold behavior effective conducting path effect short channel effect 

摘      要：We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Φdeff,minand the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.