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A flexible nickel phthalocyanine resistive random access memory with multi-level data storage capability

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Journal of Materials Science & Technology 2021年第27期86卷 151-157页

作者： Tariq Aziz Yun Sun Zu-Heng Wu Mustafa Haider Ting-Yu Qu Azim Khan Chao Zhen Qi Liu Hui-Ming Cheng Dong-Ming Sun Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang110016China University of Chinese Academy of Sciences 19A Yuquan RoadBeijing100049China School of Material Science and Engineering University of Science and Technology of China72 Wenhua RoadShenyang110016China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences3 Bei-Tu-Cheng West RoadBeijing100029China Pak-Austria Fachhochschule:Institute of Applied Sciences and Technology MangKhanpur RoadHaripurKPKPakistan NUS Graduate School Integrative Sciences and Engineering ProgrammeNational University of Singapore119077Singapore Frontier Institute of Chip and System Fudan University2005 Songhu RoadShanghai 200433China Shenzhen Geim Graphene Center Shenzhen International Graduate SchoolTsinghua University1001 Xueyuan RoadShenzhen518055China

Metal phthalocyanine is considered one of the most promising candidates for the design and fabrication of flexible resistive random access memory(RRAM)devices due to its intrinsic flexibility and excellent functionality.However,performance degradation and the lack of multi-level capability,which can directly expand the storage capacity in one memory cell without sacrificing additional layout area,are the primary obstacles to the use of metal phthalocyanine RRAMs in information storage.Here,a flexible RRAM with pristine nickel phthalocyanine(Ni Pc)as the resistive layer is reported for multi-level data storage.Due to its high trap-concentration,the charge transport behavior of the device agrees well with classical space charge limited conduction controlled by traps,leading to an excellent performance,including a high on-off current ratio of 10^(7),a long-term retention of 10^(6)s,a reproducible endurance over6000 cycles,long-term flexibility at a bending strain of 0.6%,a write speed of 50 ns under sequential bias pulses and the capability of multi-level data storage with reliable retention and uniformity.

关键词： Flexible Metal phthalocyanine resistive random access memory Multi-level

An overview of resistive random access memory devices

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Science Bulletin 2011年第Z2期 3072-3078页

作者： LI YingTao 1,2 , LONG ShiBing 2 , LIU Qi 2 , Lü HangBing 2 , LIU Su 1 & LIU Ming 2* 1 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China 2 Laboratory of Nano-Fabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.

关键词： resistive random access memory resistive switching performance parameters

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基于准二维钙钛矿的高稳定电阻随机存储器

Science China Materials 2024年第3期67卷 879-886页

作者：陈享潘孝鑫蒋博闻危家昀龙研汤杰李晓庆张军段金霞桃李马国坤王浩 Institute of Microelectronics and Integrated Circuits School of MicroelectronicsHubei UniversityWuhan 430062China Hubei Yangtze memory Laboratories Wuhan 430205China

电阻式随机存储器(RRAM)一直被视为新兴存储器技术中具有挑战性的替代品.近年来,人们发现基于有机-无机杂化卤化物钙钛矿的RRAM具有优异的存储特性.本研究利用简单的一步旋涂策略,在空气中不使用反溶剂,制备出了具有准二维钙钛矿活性层... 详细信息

电阻式随机存储器(RRAM)一直被视为新兴存储器技术中具有挑战性的替代品.近年来,人们发现基于有机-无机杂化卤化物钙钛矿的RRAM具有优异的存储特性.本研究利用简单的一步旋涂策略,在空气中不使用反溶剂,制备出了具有准二维钙钛矿活性层的Al/(PEA)_(2)-MAPb_(2)I_(3)Br_(4)/SnO_(2)/氧化铟锡(ITO)非易失性RRAM,该器件表现出了出色且高度稳定的双极性电阻切换特性.此外,该器件表现出约为10~4的开/关比,低SET电压(约0.8 V),并且具有相对稳定的耐久性(大于1000次循环).高阻态和低阻态的传导机制分别是空间电荷限流传导和欧姆传导.此外,由于苯乙胺分子的疏水性,该器件在40%湿度下放置90天依然表现出显著的阻变特性.因此,这种高性能、稳定的RRAM为未来存储器的商业化提供了可能性.

关键词： resistive random access memory organic-inorganic hybrid quasi-two-dimensional high stability

A bidirectional threshold switching selector with a symmetric multilayer structure

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Science China(Information Sciences) 2021年第4期64卷 208-213页

作者： Qingjiang LI Kun LI Yongzhou WANG Sen LIU Bing SONG College of Electronic Science and Technology National University of Defense Technology

Selectors have been proposed as a highly effective tool for suppressing substantial leakage currents without sacrificing the high density of resistive random-access memory(RRAM) crossbar arrays. Among various selector types, the programmable metallization cell(PMC) selector is promising due to its simple structure and high selectivity. In this work, we demonstrate a new PMC selector that exhibits bidirectional threshold switching behavior by implementing symmetric multilayer dielectrics. The proposed Ag/SiTe/HfO/SiTe/Ag selector device has a low off current( 10~5), and low threshold voltage variation(< 0.05). Upon connection to a bipolar RRAM cell via a wire, the proposed selector successfully suppresses the leakage current of an unselected device below the threshold voltage.

关键词： threshold switching selector resistive random access memory leakage current programmable metallization cell

Investigation of resistive switching behaviours in WO_3-based RRAM devices

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Chinese Physics B 2011年第1期20卷 589-595页

作者：李颖弢龙世兵吕杭炳刘琦王琴王艳张森连文泰刘肃刘明 Institute of Microelectronics School of Physical Science and TechnologyLanzhou University Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

关键词： resistive random access memory resistive switching nonvolatile WO3

Improved resistive switching stability of Pt/ZnO/CoO_x /ZnO/Pt structure for nonvolatile memory devices

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Rare Metals 2013年第6期32卷 544-549页

作者： Guang Chen Cheng Song Feng Pan Laboratory of Advanced Materials Science and Engineering Tsinghua University

For Pt(Ag)/ZnO single-layer/Pt structure,random 10 formation and rupture of conductive filaments composed by oxygen vacancies or metallic ions often cause dispersion problems of resistive switching(RS)parameters,which is disadvantageous to devices application.In this study,ZnO/CoOx/ZnO(ZCZ)tri-layers were utilized as the switching layers to investigate their RS properties as compared with ZnO-based single-layer devices.It is interestingly noted that Pt/ZCZ/Pt devices show quite stable bipolar RS behaviors with little resistance value fluctuations compared to Ag/ZCZ/Pt devices and Pt(Ag)/ZnO/Pt devices,which minimize the dispersion of the resistances of RS.This highly stable RS effect of Pt/ZCZ/Pt structure would be promising for high density memory devices.

关键词： resistive random access memory Conductive filaments ZnO CoO x

Self-compliance multilevel storage characteristic in HfO_2-based device

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Chinese Physics B 2016年第10期25卷 259-261页

作者：高晓平傅丽萍陈传兵袁鹏李颖弢 Gansu Key Laboratory of Sensor and Sensor Technology Institute of Sensor Technology Gansu Academy of Sciences Cuiying Honors College Lanzhou University School of Physical Science and Technology Lanzhou University

In this paper, the self-compliance bipolar resistive switching characteristic of an HfO-based memory device with Ag/HfO/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s,which may be useful for the applications in nonvolatile multilevel storage.

关键词： resistive switching resistive random access memory multilevel self-compliance