An overview of resistive random access memory devices

作     者：LI YingTao 1,2 , LONG ShiBing 2 , LIU Qi 2 , Lü HangBing 2 , LIU Su 1 & LIU Ming 2* 1 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China 2 Laboratory of Nano-Fabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China 

出 版 物：《Science Bulletin》 (科学通报(英文版))

年 卷 期：2011年第Z2期

页      面：3072-3078页

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

主　　题：resistive random access memory resistive switching performance parameters 

摘      要：With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.