Improved resistive switching stability of Pt/ZnO/CoO_x /ZnO/Pt structure for nonvolatile memory devices

作     者：Guang Chen Cheng Song Feng Pan 

作者机构：Laboratory of Advanced MaterialsScience and Engineering Tsinghua University 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2013年第32卷第6期

页      面：544-549页

核心收录：

学科分类：0806[工学-冶金工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 081201[工学-计算机系统结构] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (Nos.51231004 and 51202125) National Basic Research Program of China (No.2010CB832905) 

主　　题：Resistive random access memory Conductive filaments ZnO CoO x 

摘      要：For Pt(Ag)/ZnO single-layer/Pt structure,random 10 formation and rupture of conductive filaments composed by oxygen vacancies or metallic ions often cause dispersion problems of resistive switching(RS)parameters,which is disadvantageous to devices *** this study,ZnO/CoOx/ZnO(ZCZ)tri-layers were utilized as the switching layers to investigate their RS properties as compared with ZnO-based single-layer *** is interestingly noted that Pt/ZCZ/Pt devices show quite stable bipolar RS behaviors with little resistance value fluctuations compared to Ag/ZCZ/Pt devices and Pt(Ag)/ZnO/Pt devices,which minimize the dispersion of the resistances of *** highly stable RS effect of Pt/ZCZ/Pt structure would be promising for high density memory devices.