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High mobility germanium-on-insulator p-channel FinFETs

Science China(Information Sciences) 2021年第4期64卷 241-242页

作者： Huan LIU Genquan HAN Jiuren ZHOU Yan LIU Yue HAO State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University

Dear editor,Over the past decade, germanium has attracted great interest as a promising channel material for p-channel metal oxide semiconductor field-effect-transistor (MOSFET), owing to its higher hole mobility over... 详细信息

关键词： ZrO2 High Mobility p-channel FinFET Germanium on Insulator

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A novel 2 T p-channel nano-crystal memory for low power/high speed embedded NVM applications

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Journal of Semiconductors 2012年第8期33卷 67-70页

作者：张君宇王永刘璟张满红许中广霍宗亮刘明 Institute of Microelectronics Chinese Academy of Sciences

We introduce a novel 2 T p-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory（NVM） *** using the band-to-band tunneling-induced hot-electron （BTBTIHE） injection scheme,both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor,the ＂erased states＂ can be set to below 0 V,so that the periphery HV circuit （high-voltage generating and management） and read-out circuit can be *** memory cell performance has also been achieved,including a fast program/erase（p/E） speed（a 1.15 V memory window under 10μs program pulse）,an excellent data retention（only 20%charge loss for 10 years）.The data shows that the device has strong potential for future embedded NVM applications.

关键词： p-channel select transistor nano-crystal memory embedded

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High threshold voltage enhancement-mode GaN p-FET with Sirich LpCVD SiN_(x) gate insulator for high hole mobility

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Journal of Semiconductors 2023年第8期44卷 78-86页

作者： Liyang Zhu Kuangli Chen Ying Ma Yong Cai Chunhua Zhou Zhaoji Li Bo Zhang Qi Zhou State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsCASSuzhou 215123China Institute of Electronic and Information Engineering University of Electronic Science and Technology of ChinaDongguan 523808China

In this work,the GaN p-MISFET with LpCVD-SiN_(x) is studied as a gate dielectric to improve device *** changing the Si/N stoichiometry of SiN_(x),it is found that the channel hole mobility can be effectively enhanced with Si-rich SiN_(x) gate dielectric,which leads to a respectably improved drive current of GaN *** record high channel mobility of 19.4 cm2/(V∙s)was achieved in the device featuring an Enhancement-mode *** from the significantly improved channel mobility,the fabricated E-mode GaN p-MISFET is capable of delivering a decent-high current of 1.6 mA/mm,while simultaneously featuring a negative threshold-voltage(VTH)of–2.3 V(defining at a stringent criteria of 10μA/mm).The device also exhibits a well pinch-off at 0 V with low leakage current of 1 nA/*** suggests that a decent E-mode operation of the fabricated p-FET is *** addition,the VTH shows excellent stability,while the threshold-voltage hysteresisΔVTH is as small as 0.1 V for a gate voltage swing up to–10 V,which is among the best results reported in the *** results indicate that optimizing the Si/N stoichiometry of LpCVD-SiN_(x) is a promising approach to improve the device performance of GaN p-MISFET.

关键词： p-channel GaN p-FET LpCVD channel mobility hole mobility enhancement-mode

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