High mobility germanium-on-insulator p-channel FinFETs

作     者：Huan LIU Genquan HAN Jiuren ZHOU Yan LIU Yue HAO Huan LIU;Genquan HAN;Jiuren ZHOU;Yan LIU;Yue HAO

作者机构：State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2021年第64卷第4期

页      面：241-242页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by National Key Research and Development Project (Grant Nos. 2018YFB2200500, 2018YFB2202800) National Natural Science Foundation of China (Grant Nos. 61534004, 61604112, 61622405, 61874081, 61851406) 

主　　题：ZrO2 High Mobility P-Channel FinFET Germanium on Insulator 

摘      要：Dear editor,Over the past decade, germanium has attracted great interest as a promising channel material for p-channel metal oxide semiconductor field-effect-transistor (MOSFET), owing to its higher hole mobility over Si [1].