A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

作     者：张君宇 王永 刘璟 张满红 许中广 霍宗亮 刘明 

作者机构：Institute of MicroelectronicsChinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2012年第33卷第8期

页      面：67-70页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：Project supported by the National Basic Research Program of China(Nos.2010CB934204,2011CBA00600) the National Natural Science Foundation of China(Nos.60825403,60676008,60676061) the Hi-Tech Research and Development Program of China(Nos. 2008AA031403,2009AA03Z306) 

主　　题：P-channel select transistor nano-crystal memory embedded 

摘      要：We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory（NVM） *** using the band-to-band tunneling-induced hot-electron （BTBTIHE） injection scheme,both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor,the ＂erased states＂ can be set to below 0 V,so that the periphery HV circuit （high-voltage generating and management） and read-out circuit can be *** memory cell performance has also been achieved,including a fast program/erase（P/E） speed（a 1.15 V memory window under 10μs program pulse）,an excellent data retention（only 20%charge loss for 10 years）.The data shows that the device has strong potential for future embedded NVM applications.