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low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Chinese Physics B 2015年第8期24卷 613-618页

作者：刘远陈海波刘玉荣王信恩云飞李斌陆裕东 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI No. 58th Research Institute of China Electronics Technology Group Corporation School of Electronic and Information Engineering South China University of Technology Xinjiang Technical Institute of Physics & Chemistry Chinese Academy of Sciences

low frequency noise behaviors of partially depleted silicon-on-insulator(PDSOI) n-channel metal-oxide semiconductors(MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/V·s to 363.65 cm2/V·s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10-10V2·Hz-1and 2.7×10-8V2·Hz-1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017cm-3·e V-1to 6.16×1018cm-3·e V-1. Based on carrier mobility fluctuation theory, the extracted average Hooge’s parameter in these devices increases from 3.92×10-5to 1.34×10-2after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M·rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are-10.82 V and-31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

关键词： silicon on insulator ion implantation ionizing radiation low frequency noise

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TRPV4-induced Neurofilament Injury Contributes to Memory Impairment after High Intensity and low frequency noise Exposures

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Biomedical and Environmental Sciences 2023年第1期36卷 50-59页

作者： YANG Yang WANG Ju QUAN Yu Lian YANG Chuan Yan CHEN Xue Zhu LEI Xue Jiao TAN Liang FENG Hua LI Fei CHEN Tu Nan Department of Neurosurgery and Key Laboratory of Neurotrauma Southwest HospitalThird Military Medical University(Army Medical University)Chongqing 400038China Department of Neurosurgery The 904h Hospital of PLASchool of Medicine of Anhui Medical UniversityWuxi 214044JiangsuChina

Objective Exposure to high intensity, low frequency noise(HI-LFN) causes vibroacoustic disease(VAD),with memory deficit as a primary non-auditory symptomatic effect of VAD. However, the underlying mechanism of the memory deficit is unknown. This study aimed to characterize potential mechanisms involving morphological changes of neurons and nerve fibers in the hippocampus, after exposure to *** Adult wild-type and transient receptor potential vanilloid subtype 4 knockout(TRPV4^(-/-)) mice were used for construction of the HI-LFN injury model. The new object recognition task and the Morris water maze test were used to measure the memory of these animals. Hemoxylin and eosin and immunofluorescence staining were used to examine morphological changes of the hippocampus after exposure to *** The expression of TRPV4 was significantly upregulated in the hippocampus after HI-LFN exposure. Furthermore, memory deficits correlated with lower densities of neurons and neurofilamentpositive nerve fibers in the cornu ammonis 1(CA1) and dentate gyrus(DG) hippocampal areas in wildtype mice. However, TRPV4^(-/-)mice showed better performance in memory tests and more integrated neurofilament-positive nerve fibers in the CA1 and DG areas after HI-LFN *** TRPV4 up-regulation induced neurofilament positive nerve fiber injury in the hippocampus,which was a possible mechanism for memory impairment and cognitive decline resulting from HI-LFN exposure. Together, these results identified a promising therapeutic target for treating cognitive dysfunction in VAD patients.

关键词： low frequency noise Memory impairment TRPV4 Neurofilament Nerve fibers Hippocampuslow frequency noise Memory impairment TRPV4 Neurofilament Nerve fibers Hippocampus

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Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

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Chinese Physics B 2018年第6期27卷 524-530页

作者： Li Wang Yuan Liu Kui-Wei Geng Ya-Yi Chen Yun-Fei En School of Electronic and Information Engineering South China University of TechnologyGuangzhou 510640China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREIGuangzhou 510610China Key Laboratory of Silicon Device Technology Chinese Academy of SciencesBeijing 100029China

The instabilities of indium–zinc oxide thin film transistors under bias and/or illumination stress are studied in this paper. Firstly, illumination experiments are performed, which indicates the variations of current–voltage characteristics and electrical parameters（such as threshold voltage and sub-threshold swing） are dominated by the stress-induced ionized oxygen vacancies and acceptor-like states. The dependence of degradation on light wavelength is also investigated. More negative shift of threshold voltage and greater sub-threshold swing are observed with the decrease of light ***, a negative bias illumination stress experiment is carried out. The degradation of the device is aggravated due to the decrease of recombination effects between ionized oxygen vacancies and free carriers. Moreover, the contributions of ionized oxygen vacancies and acceptor-like states are separated by using the mid-gap method. In addition, ionized oxygen vacancies are partially recombined at room temperature and fully recombined at high temperature. Finally, low-frequency noise is measured before and after negative bias illumination stress. Experimental results show few variations of the oxide trapped charges are generated during stress, which is consistent with the proposed mechanism.

关键词： indium-zinc oxide thin film transistor illumination low frequency noise

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Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits

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Journal of Materials Science & Technology 2023年第28期159卷 41-51页

作者： Leini Wang Gang He Wenhao Wang Xiaofen Xu Shanshan Jiang Elvira Fortunato Rodrigo Martins School of Materials Science and Engineering Anhui UniversityHefei 230601China School of Integration Circuits Anhui UniversityHefei 230601China Department of Materials Science/CENIMAT-I3N Faculty of Sciences and TechnologyNew University of Lisbon and CEMOP-UNINOVA Campus de Caparica 2829-516 Caparic1Portugal

The homojunction based on Ti_(3)C_(2)T_(x) MXene-doped In_(2)O_(3) and indium oxide as the channel layer is real-ized in high-performance metal oxide thin film transistors(TFTs).Doping of MXene into In_(2)O_(3) results in n-type semiconductor behavior,realizing tunable work function of In_(2)O_(3) from 5.11 to 4.79 eV as MXene content increases from 0 to 2 wt.%.MXene-doped In_(2)O_(3)-based homojunction TFT presents optimal per-formance with electron mobilities of greater than 27.10 cm^(2)/(V s)at 240°C,far exceeding the maximum mobility of 3.91 cm^(2)/(V s)for single-layer In_(2)O_(3)*** improved performance originates from boosting of a two-dimensional electron gas(2DEG)formed at carefully engineered In_(2)O_(3)/MXene-doped In_(2)O_(3)ox-ide homojunction ***,the transformation in conduction mechanism leads to better stability of MXene-doped In_(2)O_(3) homojunction devices compared to undoped bilayer In_(2)O_(3).low-frequency noise further illustrates that doping MXene into In_(2)O_(3) helps to reduce the device trap density,demonstrating excellent electrical performance.A resistor-loaded unipolar inverter based on In_(2)O_(3)/0.5%MXene-In_(2)O_(3)TFT has demonstrated full swing characteristics and a high gain of *** effective doping of MXene into constructed homojunction TFTs not only contributes to improved stability,but also provides an ef-fective strategy for designing novel homojunction TFTs for low-cost oxide-based electronics.

关键词： MXene-doped In_(2)O_(3) Homojunction 2D electron gases Thin film transistor low frequency noise

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Ammonia sensing using arrays of silicon nanowires and graphene

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Journal of Semiconductors 2018年第6期39卷 112-118页

作者： K.Fobelets C.Panteli O.Sydoruk Chuanbo Li OSD Electrical and Electronic Engineering DepartmentImperial College London Institute of Semiconductors Chinese Academy of Sciences

Ammonia （NH3） is a toxic gas released in different industrial, agricultural and natural processes. It is also a biomarker for some diseases. These require NH3 sensors for health and safety reasons. To boost the sensitiv- ity of solid-state sensors, the effective sensing area should be increased. Two methods are explored and compared using an evaporating pool of 0.5 mL NH4OH （28% NH3）. In the first method an array of Si nanowires （Si NWA） is obtained via metal-assisted-electrochemical etching to increase the effective surface area. In the second method CVD graphene is suspended on top of the Si nanowires to act as a sensing layer. Both the effective surface area as well as the density of surface traps influences the amplitude of the response. The effective surface area of Si NWAs is 100 × larger than that of suspended graphene for the same top surface area, leading to a larger response in amp- litude by a factor of -7 notwithstanding a higher trap density in suspended graphene. The use of Si NWAs in- creases the response rate for both Si NWAs as well as the suspended graphene due to more effective NH3 diffu- sion processes.

关键词： NH3 sensor silicon nanowires resistive sensor low frequency noise graphene

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Journal of Semiconductors 2015年第9期36卷 66-70页

作者：方雯 Eddy Simoen Li Chikang Marc Aoulaiche 罗军赵超 Cor Claeys IMEC E.E. Depart. KU Leuven Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Graduate Institute of Photonics and Optoelectronics and Department of Electrical EngineeringNational Taiwan University Micron Technology Belgium IMEC Campus

This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.

关键词： random telegraph noise low frequency noise ultra-thin BOX silicon-on-insulator single charge trap

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