Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits

作     者：Leini Wang Gang He Wenhao Wang Xiaofen Xu Shanshan Jiang Elvira Fortunato Rodrigo Martins Leini Wang;Gang He;Wenhao Wang;Xiaofen Xu;Shanshan Jiang;Elvira Fortunato;Rodrigo Martins

作者机构：School of Materials Science and EngineeringAnhui UniversityHefei 230601China School of Integration CircuitsAnhui UniversityHefei 230601China Department of Materials Science/CENIMAT-I3NFaculty of Sciences and TechnologyNew University of Lisbon and CEMOP-UNINOVA Campus de Caparica 2829-516 Caparic1Portugal 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2023年第159卷第28期

页      面：41-51页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the National Natural Science Foundation of China(No.11774001) the Anhui Project(No.Z010118169) 

主　　题：MXene-doped In_(2)O_(3) Homojunction 2D electron gases Thin film transistor Low frequency noise 

摘      要：The homojunction based on Ti_(3)C_(2)T_(x) MXene-doped In_(2)O_(3) and indium oxide as the channel layer is real-ized in high-performance metal oxide thin film transistors(TFTs).Doping of MXene into In_(2)O_(3) results in n-type semiconductor behavior,realizing tunable work function of In_(2)O_(3) from 5.11 to 4.79 eV as MXene content increases from 0 to 2 wt.%.MXene-doped In_(2)O_(3)-based homojunction TFT presents optimal per-formance with electron mobilities of greater than 27.10 cm^(2)/(V s)at 240°C,far exceeding the maximum mobility of 3.91 cm^(2)/(V s)for single-layer In_(2)O_(3)*** improved performance originates from boosting of a two-dimensional electron gas(2DEG)formed at carefully engineered In_(2)O_(3)/MXene-doped In_(2)O_(3)ox-ide homojunction ***,the transformation in conduction mechanism leads to better stability of MXene-doped In_(2)O_(3) homojunction devices compared to undoped bilayer In_(2)O_(3).Low-frequency noise further illustrates that doping MXene into In_(2)O_(3) helps to reduce the device trap density,demonstrating excellent electrical performance.A resistor-loaded unipolar inverter based on In_(2)O_(3)/0.5%MXene-In_(2)O_(3)TFT has demonstrated full swing characteristics and a high gain of *** effective doping of MXene into constructed homojunction TFTs not only contributes to improved stability,but also provides an ef-fective strategy for designing novel homojunction TFTs for low-cost oxide-based electronics.