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Tunning the bandgap of MnO_(2)homojunction by building active high-index facet to achieve rapid electron transfer for enhanced photocatalytic sterilization

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Journal of Materials Science & Technology 2024年第1期168卷 265-275页

作者： Tao Zhang Bo Li Chaofeng Wang Shuilin Wu Shengli Zhu Hui Jiang Yufeng Zheng Zhaoyang Li Zhenduo Cui Yu Zhang Paul K Chu Xiangmei Liu Biomedical Materials Engineering Research Center Hubei Key Laboratory of Polymer MaterialsMinistry-of-Education Key Laboratory for the Green Preparation and Application of Functional MaterialsSchool of Materials Science and Engineering Hubei UniversityWuhan 430062China School of Health Science&Biomedical Engineering Hebei University of TechnologyTianjin 300401China School of Materials Science&Engineering Peking UniversityBeijing 100871China School of Materials Science&Engineering the Key Laboratory of Advanced Ceramics and Machining Technology by the Ministry of Education of ChinaTianjin UniversityTianjin 300072China Department of Orthopedics Guangdong Provincial People’s HospitalGuangdong Academy of Medical SciencesGuangzhou 510080China Department of Physics Department of Materials Science and Engineering and Department of Biomedical EngineeringCity University of Hong KongHong Kong 999077China

Photocatalysis has been a research hotspot in recent years,and the design and modification of photocat-alysts have been the key *** methods for designing photocatalysts,including constructing heterojunctions and homojunctions,have been developed on the basis of *** this study,two homojunctions of manganese dioxide(MnO_(2)),including a high-index crystal plane homojunction and a general homojunction,are prepared using a stepwise hydrothermal *** a capping agent,the high-index crystal surface of the MnO_(2)is *** is found that the electron transport efficiency be-tween the two components of the homojunction with high-index planes is higher and the adsorption capacity of the oxygen is stronger,which leads to higher photocatalytic *** addition,the newly designed high-index homojunction is used for the treatment of bacterial infections,and it kills Staphy-lococcus aureus(***)and Escherichia coli(***)at rates of 99.95%±0.04%and 99.31%±0.25%,*** also has excellent therapeutic effects on mouse wounds,which implies superb practical application *** work provides a new strategy for the improved design of homojunctions and the application of photocatalytic materials.

关键词： Photocatalysis homojunction Bandgap High-index facet Antibacterial

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Built-in electric field induced S-scheme g-C_(3)N_(4)homojunction for efficient photocatalytic hydrogen evolution:Interfacial engineering and morphology control

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Nano Research 2024年第6期17卷 4961-4970页

作者： Yongpan Gu Yike Li Haoqiang Feng Yanan Han Zhongjun Li College of Chemistry Zhengzhou UniversityZhengzhou 450001China

S-scheme possesses superior redox capabilities compared with the II-scheme,providing an effective method to solve the innate defects of g-C_(3)N_(4)(CN).In this study,S-doped g-C_(3)N_(4)/g-C_(3)N_(4)(SCN-tm/CN)S-scheme homojunction was constructed by rationally integrating morphology control with interfacial engineering to enhance the photocatalytic hydrogen evolution ***-situ Kelvin probe force microscopy(KPFM)confirms the transport of photo-generated electrons from CN to *** functional theory(DFT)calculations reveal that the generation of a built-in electric field between SCN and CN enables the carrier separation to be more efficient and *** transient absorption spectrum(fs-TAS)indicates prolonged lifetimes of SCN-tm/CN_(3)(τ1:9.7,τ2:110,andτ3:1343.5 ps)in comparison to those of CN(τ1:4.86,τ2:55.2,andτ3:927 ps),signifying that the construction of homojunction promotes the separation and transport of electron hole pairs,thus favoring the photocatalytic *** visible light irradiation,the optimized SCN-tm/CN_(3)exhibits excellent photocatalytic activity with the hydrogen evolution rate of 5407.3μmol·g^(−1)·h^(−1),which is 20.4 times higher than that of CN(265.7μmol·g^(−1)·h^(−1)).Moreover,the homojunction also displays an apparent quantum efficiency of 26.8%at 435 nm as well as ultra-long and ultra-stable cycle *** work offers a new strategy to construct highly efficient photocatalysts based on the metal-free conjugated polymeric CN for realizing solar energy conversion.

关键词： homojunction built-in electric field morphology control interfacial engineering carrier separation

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homojunction and ohmic contact coexisting carbon nitride for efficient photocatalytic hydrogen evolution

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Nano Research 2023年第7期16卷 8782-8792页

作者： Xiao Fang Lu Chen Hongrui Cheng Xiaoqiong Bian Wenhao Sun Kaining Ding Xinghe Xia Xin Chen Jiefang Zhu Yuanhui Zheng College of Chemistry Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated MaterialsFuzhou UniversityFuzhou 350116China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350116China College of Physics and Information Engineering Fuzhou UniversityFuzhou 350116China Department of Chemistry−Ångström Laboratory Uppsala UniversityUppsala SE-75121Sweden The Key Laboratory for Ultrafine Materials of The Ministry of Education East China University of Science and TechnologyShanghai 200237China

Carbon nitride(CN)has attracted intensive attention as a visible light photocatalyst,but the rapid recombination of photogenerated charge carriers limits its photocatalytic ***,we develop a new strategy to construct both homojunction and ohmic junction into CN via selectively introducing metallized CN(MCN),which leads to rapid separation and transfer of photogenerated charge *** polymerization of urea in the presence of KOH creates CN homojunction with amino and cyano *** subsequent molten salt treatment induces a new type of cyano-terminated CN that can be converted to MCN through photodoping,forming homojunction and ohmic contact coexisting CN(HOCN).The formed HOCN photocatalyst exhibits a high photocatalytic H_(2)evolution rate of 18.5 mmol·g^(-1)·h^(-1)under visible light irradiation,45-fold higher than that of bulk *** strategy provides a new idea for designing ohmic contact between semiconductor and metal,and realizing efficient photocatalysis by improving charge separation and transfer.

关键词： carbon nitride photocatalysis homojunction ohmic contact hydrogen evolution

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homojunction photocatalysts for water splitting

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Nano Research 2022年第12期15卷 10171-10184页

作者： Xiangjiu Guan Shichao Zong Shaohua Shen International Research Center for Renewable Energy State Key Laboratory of Multiphase Flow in Power EngineeringXi’an Jiaotong UniversityXi’an710049China Suzhou Academy of Xi’an Jiaotong University Suzhou215123China Key Laboratory of Subsurface Hydrology and Ecological Effects in Arid Region Ministry of EducationSchool of Water and EnvironmentChang’an UniversityXi’an710064China

Charge-carrier separation is regarded as one of the critical issues of photocatalytic water splitting and could be accelerated by constructing microscopic junctions in *** photocatalysts consisting of different forms of semiconductor with identical compositions could inherit the advantages of heterojunction-based photocatalysts in charge separation due to the built-in electric field,while omitting the potential drawbacks of interfacial lattice distortion by providing continuous band ***,homojunction-based photocatalysts have recently drawn growing attention in water *** this review,the synthetic approaches to preparing photocatalysts with various homojunction structures including p-n junction,phase junction,and facet junction were introduced,together with a comprehensive analysis and discussion on the latest progress in the application of photocatalytic water *** review work is expected to inspire more related work with promoted research on designing efficient homojunction-based photocatalytic systems for water splitting.

关键词： photocatalytic water splitting homojunction charge separation

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Tune the electronic structure of MoS_(2)homojunction for broadband photodetection

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Journal of Materials Science & Technology 2022年第24期119卷 61-68页

作者： Rui Tao Xianlin Qu Zegao Wang Fang Li Lei Yang Jiheng Li Dan Wang Kun Zheng Mingdong Dong College of Materials Science and Engineering Sichuan UniversityChengdu 610065China Beijing Key Lab of Microstructure and Properties of Solids Faculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100124China State Key Laboratory for Advanced Metals&Materials University of Science&Technology BeijingBeijing 100083China State Key Laboratory of Organic-Inorganic Composites Beijing University of Chemical TechnologyBeijing 100029China Interdisciplinary Nanoscience Center Aarhus UniversityAarhus 8000Denmark

Due to the weak absorption and low light-matter interaction of MoS_(2),intrinsic MoS_(2)photodetector usually has low photoresponse,thus limiting its real ***,MoS_(2)homojunction was constructed by using the chemical vapor deposition grown intrinsic MoS_(2)films and the Nb-doped MoS_(2)*** results show that the Nb doping will induce p-type doping in MoS_(2),where the electron concentration will decrease by 2.08×10^(12)cm^(–2)after Nb *** investigating the photoelectric effect of MoS_(2)/Nb-doped MoS_(2)homojunction-based phototransistor,the tunability of the photoresponse,detectivity as the function of the external field,wavelength,and power of light have been studied in *** results show that the photoresponse and detectivity are strongly dependent on the gate voltage due to the external field tuned interlayer photoexcitation attributing to the band *** maximum of photoresponse can reach 51.4 A/W,the detectivity can reach 3.0×10^(12)Jones,which is two orders higher than that of intrinsic MoS_(2).Furthermore,by correlating the photoresponse and detectivity with the external field,it is found that the photodetection of MoS_(2)homojunction can be significantly tuned and exhibit well photodetection in *** comprehensive work not only sheds light on the tunable photoexcitation mechanism but also offers a strategy to achieve a high-performance photodetector.

关键词： Molybdenum disulfide P-type doping homojunction Photoresponse Tunability

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Gradient Si-and Ti-doped Fe_(2)O_(3) hierarchical homojunction photoanode for efficient solar water splitting:Effect of facile microwave-assisted growth of Si-FeOOH on Ti-FeOOH nanocorals

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Journal of Energy Chemistry 2023年第2期77卷 27-37,I0002页

作者： Tae Sik Koh Periyasamy Anushkkaran Weon-Sik Chae Hyun Hwi Lee Sun Hee Choi Jum Suk Jang Division of Biotechnology College of Environmental and Bioresource SciencesJeonbuk National UniversityIksan 54596Republic of Korea Daegu Center Korea Basic Science InstituteDaegu 41566Republic of Korea Pohang Accelerator Laboratory Pohang University of Science and Technology(POSTECH)Pohang 37673Republic of Korea

The construction of a homojunction is an effective approach for addressing issues such as slow charge separation and charge-transfer kinetics in *** the present work,we designed a gradient Si-and Ti-doped Fe_(2)O_(3) homojunction photoanode to improve the photoelectrochemical(PEC)performance of a Ti-doped Fe_(2)O_(3) ***-FeOOH nanocorals were synthesized using a hydrothermal process,and Si-FeOOH was grown on Ti-FeOOH nanocorals using a rapid and facile microwaveassisted(MW)*** varying the MW irradiation time,the thickness of the Si/Ti:Fe_(2)O_(3) photoanode was adjusted and an optimized 3-Si/Ti:Fe_(2)O_(3) photoelectrode was achieved with a significantly enhanced photocurrent density(1.37 mA cm^(-2) at 1.23 V ***)and a cathodic shift of the onset potential(150 mV)compared with that of bare Ti-Fe_(2)O_(3).This enhanced PEC performance can be ascribed to homojunction formation and Si gradient *** Si dopant increased the donor concentration and the formation of a homojunction improved the intrinsic built-in electric field,thereby promoting charge separation and charge ***,the as-formed homojunction passivated the surfacetrapping states,consequently improving the charge transfer efficiency(60%at 1.23 VRHE)at the photoanode/electrolyte *** findings could pave the way for the microwave-assisted fabrication of diverse efficient homojunction photoanodes for PEC water splitting applications.

关键词： homojunction Microwave-assisted Hematite Gradient doping PEC water splitting

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Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits

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Journal of Materials Science & Technology 2023年第28期159卷 41-51页

作者： Leini Wang Gang He Wenhao Wang Xiaofen Xu Shanshan Jiang Elvira Fortunato Rodrigo Martins School of Materials Science and Engineering Anhui UniversityHefei 230601China School of Integration Circuits Anhui UniversityHefei 230601China Department of Materials Science/CENIMAT-I3N Faculty of Sciences and TechnologyNew University of Lisbon and CEMOP-UNINOVA Campus de Caparica 2829-516 Caparic1Portugal

The homojunction based on Ti_(3)C_(2)T_(x) MXene-doped In_(2)O_(3) and indium oxide as the channel layer is real-ized in high-performance metal oxide thin film transistors(TFTs).Doping of MXene into In_(2)O_(3) results in n-type semiconductor behavior,realizing tunable work function of In_(2)O_(3) from 5.11 to 4.79 eV as MXene content increases from 0 to 2 wt.%.MXene-doped In_(2)O_(3)-based homojunction TFT presents optimal per-formance with electron mobilities of greater than 27.10 cm^(2)/(V s)at 240°C,far exceeding the maximum mobility of 3.91 cm^(2)/(V s)for single-layer In_(2)O_(3)*** improved performance originates from boosting of a two-dimensional electron gas(2DEG)formed at carefully engineered In_(2)O_(3)/MXene-doped In_(2)O_(3)ox-ide homojunction ***,the transformation in conduction mechanism leads to better stability of MXene-doped In_(2)O_(3) homojunction devices compared to undoped bilayer In_(2)O_(3).Low-frequency noise further illustrates that doping MXene into In_(2)O_(3) helps to reduce the device trap density,demonstrating excellent electrical performance.A resistor-loaded unipolar inverter based on In_(2)O_(3)/0.5%MXene-In_(2)O_(3)TFT has demonstrated full swing characteristics and a high gain of *** effective doping of MXene into constructed homojunction TFTs not only contributes to improved stability,but also provides an ef-fective strategy for designing novel homojunction TFTs for low-cost oxide-based electronics.

关键词： MXene-doped In_(2)O_(3) homojunction 2D electron gases Thin film transistor Low frequency noise

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homojunction structure amorphous oxide thin film transistors with ultra-high mobility

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Journal of Semiconductors 2023年第5期44卷 19-26页

作者： Rongkai Lu Siqin Li Jianguo Lu Bojing Lu Ruqi Yang Yangdan Lu Wenyi Shao Yi Zhao Liping Zhu Fei Zhuge Zhizhen Ye State Key Laboratory of Silicon Materials Key Laboratory for Biomedical Engineering of Ministry of EducationSchool of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials Institute of WenzhouZhejiang UniversityWenzhou 325006China Department of Electronic Science and Technology College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China Ningbo Institute of Materials Technology and Engineering Chinese Academy of SciencesNingbo 315201China

Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/*** are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect *** research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.

关键词： thin film transistors homojunction carrier mobility amorphous oxides

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Characteristics of Heat-Annealed Silicon homojunction Infrared Photodetector Fabricated by Plasma-Assisted Technique

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Photonic Sensors 2016年第4期6卷 345-350页

作者： Oday A. HAMMADI Department of Physics College of Education Al-Iraqia University Baghdad IRAQ

In this work, the effect of thermal annealing on the characteristics of silicon homojunction photodetector was studied. This homojunction photodetector was fabricated by means of plasma-induced etching of p-type silicon substrate and plasma sputtering of n-type silicon target in vacuum. The electrical and spectral characteristics of this photodetector were determined and optimized before and after the annealing process. The maximum surface reflectance of 1.89% and 1.81%, the maximum responsivity of 0.495A/W and 0.55A/W, the ideality factor of 1.80 and 1.99, the maximum external quantum efficiency of 76% and 83.5%, and the built-in potential of 0.79V and 0.72 V were obtained before and after annealing, respectively.

关键词： Photodetectors homojunction spectral responsivity plasma-induced etching

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WO_(3) homojunction photoanode:Integrating the advantages of WO_(3) different facets for efficient water oxidation

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Journal of Energy Chemistry 2021年第5期30卷 37-45页

作者： Minji Yang Jie Li Gaili Ke Binyao Liu Faqin Dong Long Yang Huichao He Yong Zhou A State Key Laboratory of Environmental-Friendly Energy Materials School of Materials Science and EngineeringSouthwest University of Science and TechnologyMianyang 621010SichuanChina Ecomaterials and Renewable Energy Research Center School of PhysicsNanjing UniversityNanjing 211102JiangsuChina

The manipulation of the surface property of WO_(3) photoanode is the main breakthrough direction to improve its solar water oxidation performance both in thermodynamics and ***,we report a WO_(3)(002)/m-WO_(3) homojunction film that is composed of an upper WO_(3) layer with predominant(002)facet(WO_(3)(002))and a lower WO_(3) layer with multi-crystal facets(m-WO_(3))as a photoanode for solar water *** to the synergistic effect of WO_(3)(002)layer and m-WO_(3) layer,better water oxidation activity and stability are achieved on the WO_(3)(002)/m-WO_(3) homojunction film relative to the m-WO_(3) and WO_(3)(002)***,the improved water oxidation performance on the WO_(3)(002)/m-WO_(3) homojunction film is attributed to the *** thermodynamics,the band position differences between WO_(3)(002)layer and m-WO_(3) layer lead to the formation of WO_(3)(002)/m-WO_(3) homojunction,which has positive function of improving their charge separation and *** kinetics,the upper WO_(3)(002)layer of the WO_(3)(002)/m-WO_(3) film has superior activity in the adsorption and activation of water molecules,water oxidation on this homojunction film photoanode is inclined to follow the four-holes pathway,and the corrosion of photoanode from the H_(2)O_(2) intermediate is *** present work provides a new strategy to modify the WO_(3) photoanodes for thermodynamically and kinetically efficient water oxidation.

关键词： Photoanode Water oxidation homojunction WO_(3)facet

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