Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

作     者：刘远 陈海波 刘玉荣 王信 恩云飞 李斌 陆裕东 Liu Yuan;Chen Hai-Bo;Liu Yu-Rong;Wang Xin;En Yun-Fei;Li Bin;Lu Yu-Dong;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI;No. 58th Research Institute of China Electronics Technology Group Corporation;School of Electronic and Information Engineering, South China University of Technology;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences

作者机构：Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI No. 58th Research Institute of China Electronics Technology Group Corporation School of Electronic and Information Engineering South China University of Technology Xinjiang Technical Institute of Physics & Chemistry Chinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第8期

页      面：613-618页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61204112 and 61204116) 

主　　题：silicon on insulator ion implantation ionizing radiation low frequency noise 

摘      要：Low frequency noise behaviors of partially depleted silicon-on-insulator(PDSOI) n-channel metal-oxide semiconductors(MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/V·s to 363.65 cm2/V·s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10-10V2·Hz-1and 2.7×10-8V2·Hz-1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017cm-3·e V-1to 6.16×1018cm-3·e V-1. Based on carrier mobility fluctuation theory, the extracted average Hooge’s parameter in these devices increases from 3.92×10-5to 1.34×10-2after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M·rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are-10.82 V and-31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.