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Significantly enhanced varistor properties of CaCu_(3)Ti_(4)O_(12) based ceramics by designing superior grain boundary:Deepening and broadening interface states

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Journal of Materials Science & Technology 2022年第13期108卷 82-89页

作者： Zhuang Tang Kai Ning Zhiyao Fu Ze Lian Kangning Wu Shoudao Huang State Key Laboratory of Disaster Prevention and Reduction for Power Grid Transmission and Distribution Equipment SGCC(State Grid Corporation of China)Changsha 410000China College of Electrical and Information Engineering Hunan UniversityChangsha 410082China State Grid Shanxi Electric Power Research Institute Taiyuan 030001China State Key Laboratory of Electrical Insulation and Power Equipment Xi'an Jiaotong UniversityXi’an 710049China

Significantly enhanced varistor properties via tailoring interface states were obtained in Ca_(1-2x/3)Y_(x)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12) composite *** breakdown field was improved to 35.8 kV cm^(-1) and the nonlinear coefficient in 0.1-1 mA cm^(-2) was enhanced to 14.6 for Ca_(0.67)Y_(0.5)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12).Noticeably,the withstand voltage of single grain boundary reached up to 24 V while the reported ones were constant to about 3 *** improved properties were attributed to the formation of superior grain boundary rather than the reduced grain ***,with distinct discrepancy of nonlinear performance in the composites,the resistance and activation energy of grain boundary exhibited little *** on the double Schottky barrier at grain boundary and the field-assisted thermal emission model,it was found that the excellent electrical nonlinearity arose from the formation of deeper and broader interface states at grain *** this case,interface states were not easily entirely filled and the barrier could maintain its height under applied *** work provides a novel routine for enhancing the varistor properties of CaCu_(3)Ti_(4)O_(12) based ceramics by manipulating interface states at grain boundary.

关键词： Schottky barrier Grain boundary Varistor ceramics interface states

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Influence of interface states, conduction band offset, and front contact on the performance of a-SiC：H(n)/c-Si(p)heterojunction solar cells

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Chinese Physics B 2017年第6期26卷 534-540页

作者：乔治冀建利张彦立刘虎李同锴 Institue of Applied Physics Department of Mathematics and Physics Shijiazhuang Tiedao University Shijiazhuang 050043 China

P-type silicon heterojunction（SHJ） solar cells with a-SiC：H（n） emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC：H（n）/c-Si（p） SHJ solar cells was investigated systematically. It is shown that the open circuit voltage（Voc） and fill factor（F F） are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC：H（n）/c-Si（p） SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.

关键词： silicon heterojunction solar cells interface states band offset front contact

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Power loss transition of stable ZnO varistor ceramics: Role of oxygen adsorption on the stability of interface states at the grain boundary

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Journal of Advanced Ceramics 2023年第5期12卷 972-983页

作者： Zhuolin Cheng Rou Li Yiwei Long Jianying Li Shengtao Li Kangning Wu State Key Laboratory of Electrical Insulation and Power Equipment Xi’an Jiaotong UniversityXi’an 710049China Department of Thermal and Fluid Engineering University of TwenteEnschede 7500AEthe Netherlands

Highly stable ZnO varistor ceramics with steadily decreasing power loss have been put into applications in electrical and electronic systems for overvoltage protections, even with the absence of general understandings on their aging behaviors. In this paper, we investigated their aging nature via conducting comparative direct current (DC) aging experiments both in air and in nitrogen, during which variations of electrical properties and interface properties were measured and analyzed. Notably, continuously increasing power loss with severe electrical degradation was observed for the sample aged in nitrogen. The power loss transition was discovered to be closely related to the consumption of oxygen adsorption at the grain boundary (GB), which could, however, remain constant for the sample aged in air. The interface density of states (DOS) Ni, which is crucial for pinning the potential barrier, was proved to decrease in nitrogen, but keep stable in air. Therefore, it is concluded that the oxygen adsorption at the GB is significant for the stability of interface states, which further correlates to the long-term stability of modern stable ZnO varistor ceramics.

关键词： ZnO varistor ceramics aging power loss oxygen adsorption interface states

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Tailoring edge and interface states in topological metastructures exhibiting the acoustic valley Hall effect

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Science China(Physics,Mechanics & Astronomy) 2020年第2期63卷 82-92页

作者： Jiao Wang Yang Huang WeiQiu Chen Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province Department of Engineering MechanicsZhejiang UniversityHangzhou 310027China State Key Lab of CAD&CG Zhejiang UniversityHangzhou 310058China Soft Matter Research Center Zhejiang UniversityHangzhou 310027China

In this study, we investigate the acoustic topological insulator or topological metastructure, where an acoustic wave can exist only in an edge or interface state instead of propagating in bulk. Breaking the structural symmetry enables the opening of the Dirac cone in the band structure and the generation of a new band gap, wherein a topological edge or interface state ***, we systematically analyze two types of topological states that stem from the acoustic valley Hall effect mechanism;one type is confined to the boundary, whereas the other type can be observed at the interface between two topologically different structures. Results denote that the selection of different boundaries along with appropriately designed interfaces provides the acoustic waves in the band gap range with abilities of one-way propagation, dual-channel propagation, immunity from backscattering at sharp corners, and/or transition between propagation at interfaces and boundaries. Furthermore, we show that the acoustic wave propagation paths can be tailored in diverse and arbitrary ways by combing the two aforementioned types of topological states.

关键词： acoustic crystals valley Hall effect edge states interface states Dirac cone

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Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNχgate dielectric

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Chinese Physics B 2020年第6期29卷 419-425页

作者： Ya-Wen Zhao Liu-An Li Tao-Tao Que Qiu-Ling Qiu Liang He Zhen-Xing Liu Jin-Wei Zhang Qian-Shu Wu Jia Chen Zhi-Sheng Wu Yang Liu School of Electronics and Information Technology Sun Yat-Sen UniversityGuangzhou 510275China School of Materials Science and Engineering Sun Yat-Sen UniversityGuangzhou 510275China

We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric breakdown(TDDB).Under a high forward gate bias stress,newly increased traps generate both at the SiNx/AlGaN interface and the SiNx bulk,resulting in the voltage shift and the increase of the voltage *** prolonging the stress duration,the defects density generated in the SiNx dielectric becomes dominating,which drastically increases the gate leakage current and causes the catastrophic *** recovery by UV light illumination,the negative shift in threshold voltage(compared with the fresh one)confirms the accumulation of positive charge at the SiNx/AlGaN interface and/or in SiNx bulk,which is possibly ascribed to the broken bonds after long-term *** results experimentally confirm the role of defects in the TDDB of GaN-based MIS-HEMTs.

关键词： GaN-based MIS-HEMTs gate dielectric time-dependent dielectric breakdown interface states

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Determination of interface states and their time constant for Au/SnO_2 /n-Si (MOS) capacitors using admittance measurements

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Chinese Physics B 2013年第4期22卷 429-433页

作者： H. M. Baran A. Tataroglu Department of Physics Faculty of Arts and Sciences Gazi University

The frequency dependence of admittance measurements （capacitance–voltage （C–V ） and conductance–voltage （G/ω–V ）） of Au/SnO2 /n-Si （MOS） capacitors was investigated by taking into account the effects of the interface states （N ss ） and series resistance （Rs ） at room temperature. Admittance measurements were carried out in frequency and bias voltage ranges of 1 kHz–1 MHz and （ 5V）–（＋9V）, respectively. The values of N ss and R s were determined by using a conductance method and estimating from the admittance measurements of the MOS capacitors. At low frequencies, the interface states can follow the AC signal and yield excess capacitance and conductance. In addition, the parallel conductance （G p /ω） versus log（f） curves at various voltages include a peak due to the presence of interface states. It is observed that the N ss and their time constant （τ） range from 1.23 ×10 12 eV-1 ·cm-2 to 1.47 ×10 12 eV-1 ·cm-2 and from 7.29 ×10-5 s to 1.81 ×10-5s, respectively.

关键词： MOS capacitor admittance measurements interface states

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Low voltage substrate current： a monitor for interface states generation in ultra-thin oxide n-MOSFETs under constant voltage stresses

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Chinese Physics B 2007年第11期16卷 3502-3506页

作者：王彦刚许铭真谭长华 Institute of Microelectronics Peking UniversityBeijing100871China

The low voltage substrate current （Ib） has been studied based on generation kinetics and used as a monitor of interface states （Nit） generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib（△Ib） are proportional to variations of Nit （△Nit）. The Nit energy distributions were determined by differentiating Nit（Vg）. The results have been compared with that measured by using gate diode technique.

关键词： interface states substrate current ultra-thin oxide constant voltage stress

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Photonic and phononic interface states based on sunflower-type crystals[Invited]

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Chinese Optics Letters 2023年第6期21卷 61-66页

作者：郭子贤颜贝刘建军 Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China

interface states are widely applied in waveguide ***,previous studies failed to achieve photonic and phononic interface states independent of each other in the same crystal structure depending on the behavior of the crystal structure,i.e.,photonic or phononic crystals,making the function of interface states *** this study,straight-line and circular photonic and phononic interface states were realized independently in sunflower-type *** addition,with a defect and a metal barrier,interface states could remain almost *** results have the potential to achieve multifunction devices and reduce the cost of engineering applications.

关键词： interface states photonic and phononic crystals sunflower-type crystals

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Stimulated photoluminescence emission and trap states in Si/SiO_2 interface formed by irradiation of laser

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Chinese Physics B 2008年第5期17卷 1817-1820页

作者：黄伟其许丽王海旭金峰吴克跃刘世荣秦朝建秦水介 Key Laboratory of Photoelectron Technology and Application Guizhou University Institute of Geochemistry Chinese Academy of Sciences

Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.

关键词： interface states stimulated emission oxide structure of silicon laser irradiation

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Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

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Chinese Physics B 2017年第10期26卷 404-410页

作者：申占伟张峰 Sima Dimitrijev 韩吉胜闫果果温正欣赵万顺王雷刘兴昉孙国胜曾一平 Key Laboratory of Semiconductor Material Sciences Institute of Semiconductors University of Chinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Queensland Micro- and Nano-technology Center Griffith University

The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxide-semiconductor （MOS） capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250 ℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states. These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the （1120） and （1100） faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the （0001） face under the same NO annealing condition. In addition, it is found that Fowler-Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device. However, Poole-Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO2/SiC interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO2/SiC interfaces.

关键词： 4H-SiC metal-oxide-semiconductor capacitors trench interface states nitric oxide annealing

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