Low voltage substrate current： a monitor for interface states generation in ultra-thin oxide n-MOSFETs under constant voltage stresses

作     者：王彦刚 许铭真 谭长华 

作者机构：Institute of MicroelectronicsPeking UniversityBeijing100871China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2007年第16卷第11期

页      面：3502-3506页

核心收录：

学科分类：080805[工学-电工理论与新技术] 080904[工学-电磁场与微波技术] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：the State Key Development Program for Basic Research of China (Grant TG2000-036503) 

主　　题：interface states substrate current ultra-thin oxide constant voltage stress 

摘      要：The low voltage substrate current （Ib） has been studied based on generation kinetics and used as a monitor of interface states （Nit） generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib（△Ib） are proportional to variations of Nit （△Nit）. The Nit energy distributions were determined by differentiating Nit（Vg）. The results have been compared with that measured by using gate diode technique.