Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNχgate dielectric

作     者：Ya-Wen Zhao Liu-An Li Tao-Tao Que Qiu-Ling Qiu Liang He Zhen-Xing Liu Jin-Wei Zhang Qian-Shu Wu Jia Chen Zhi-Sheng Wu Yang Liu 赵亚文;李柳暗;阙陶陶;丘秋凌;何亮;刘振兴;张津玮;吴千树;陈佳;吴志盛;刘扬

作者机构：School of Electronics and Information TechnologySun Yat-Sen UniversityGuangzhou 510275China School of Materials Science and EngineeringSun Yat-Sen UniversityGuangzhou 510275China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2020年第29卷第6期

页      面：419-425页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：National Key Research and Development Program of China(Grant No.2017YFB0402800) the Key Research and Development Program of Guangdong Province,China(Grant Nos.2019B010128002 and 2020B010173001) the National Natural Science Foundation of China(Grant Nos.U1601210 and 61904207) the Natural Science Foundation of Guangdong Province of China(Grant No.2015A030312011) the China Postdoctoral Science Foundation(Grant No.2019M663233) 

主　　题：GaN-based MIS-HEMTs gate dielectric time-dependent dielectric breakdown interface states 

摘      要：We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric breakdown(TDDB).Under a high forward gate bias stress,newly increased traps generate both at the SiNx/AlGaN interface and the SiNx bulk,resulting in the voltage shift and the increase of the voltage *** prolonging the stress duration,the defects density generated in the SiNx dielectric becomes dominating,which drastically increases the gate leakage current and causes the catastrophic *** recovery by UV light illumination,the negative shift in threshold voltage(compared with the fresh one)confirms the accumulation of positive charge at the SiNx/AlGaN interface and/or in SiNx bulk,which is possibly ascribed to the broken bonds after long-term *** results experimentally confirm the role of defects in the TDDB of GaN-based MIS-HEMTs.