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Molecular-beam epitaxy-grown HgCdTe infrared detector:Material physics, structure design, and device fabrication

Science China(Physics,Mechanics & Astronomy) 2023年第3期66卷 32-57页

作者： Xiaohui Wang Mengbo Wang Yulong Liao Huaiwu Zhang Baohui Zhang Tianlong Wen Jiabao Yi Liang Qiao State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 611731China Yangtze Delta Region Institute(Huzhou) University of Electronic Science and Technology of ChinaHuzhou 313001China Kunming Institute of Physics Kunming 650223China Global Innovative Centre for Advanced Nanomaterials School of EngineeringThe University of NewcastleCallaghan NSW 2308Australia School of Physics University of Electronic Science and Technology of ChinaChengdu 611731China

infrared(IR) detectors have important applications in numerous civil and military sectors. Hg Cd Te is one of the most important materials for IR detector manufacture. This review systematically discusses the progress of Hg Cd Te materials grown via molecular-beam epitaxy(MBE) for IR detection in terms of material physics, structure design, and fabrication. The material physics of Hg Cd Te includes crystal information, band structure, and electrical and optical properties. The characterization methods of the As-grown Hg Cd Te materials are also summarized. Then, four design structures of Hg Cd Te for IR detectors, with multilayer, superlattice, double-layer heterojunction, and barrier properties, which significantly improve the device performance,are discussed. The third section summarizes the studies on Hg Cd Te MBE-grown on different substrates, including Cd Zn Te, Si,and Ga Sb, in recent decades. This review discusses the factors influencing the growth of the Hg Cd Te film and their relationships and optimal conditions. Finally, we present the prospects and challenges associated with the fabrication and applications of Hg Cd Te materials for IR detectors.

关键词： HgCdTe infrared detector MBE etch pit density

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The theory and experiment of very-long-wavelength 256×1 GaAs/Al_(x)Ga_(1-x)As quantum well infrared detector linear arrays

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Science China(Physics,Mechanics & Astronomy) 2008年第7期51卷 805-812页

作者： GUO FangMin LI Ning XIONG DaYuan ZHEN HongLou XU XiangYan HOU Ying DING RuiJun LU Wei HUANG Qi ZHOU JunMing National Laboratory for infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Institute of Physics Chinese Academy of SciencesBeijing 100080China

The 256×1 linear array of multiple quantum wells infrared photodetector (QWIP) is designed and fabricated for the peak response wavelength at λP=14.6 μm. The response spectral width is bigger than 2.2 μm. The two-dimensional (2D) diffractive coupling grating has been formed on the top QWIP photosensitive pixel for coupling the infrared radiation to the infrared detective layers. The performance of the device at VB=3 V and T=45 K has the responsibility 4.28×10-2 (A/W), the blackbody detectivity Db*=5.14×109 (cm·Hz1/2/W), and the peak detectivity Dλ*=4.24× 1010 (cm·Hz1/2/W). The sensor pixels are connected with CMOS read out circuit (ROC) hybridization by indium bumps. When integral time is 100 μs, the linear array has the effective pixel of QWIP FPA Nef of 99.2%, the average responsibility  (V/W) of 3.48×106 (V/W), the average peak detectivity Dλ* of 8.29×109 (cm·Hz1/2/W), and the non-uniformity UR of 5.83%. This device is ready for the thermal image application.

关键词： quantum well focal plane arrays very long wavelength infrared detector diffraction grating

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MOCVD Ga_xIn_(1-x)As_(1-y)Sb_y Alloys and the infrared detector

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Rare Metals 1992年第3期11卷 190-194页

作者：周天明张宝林金亿鑫蒋红宁永强 Changchun Institute of Physics Chinese Academy of SciencesChangchun 130021China

Ga_xIn_(1-x)As_(1-y)Sb_y alloys have been grown by atmospheric pressure MOCVD on n-GaSb(Te-doped) *** sohd composition was determined by using electron *** alloys of GalnAsSb with composition in miscibility gap were successfully *** optical properties of Ga_xIn_(1-x)As_(1-y)Sb_y lavers were characterized by the photoluminescence and the infrared *** spectral responses of p^+-GaInAsSb/p-Ga_xIn_(1-x)As_(1-y)Sb_y/n-GaSb detectors showed wavelength cut off at 2.4μm and detectivity- D~*=5×10~8 cmHz^(1/2)/W at room temperature.

关键词： MOCVD Ga_xIn+(1-x)As_(1-y)Sb_y Photoluminescence infrared absorption infrared detector

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Graphene-aluminum nitride NEMS resonant infrared detector

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Microsystems & Nanoengineering 2016年第1期2卷 181-187页

作者： Zhenyun Qian Yu Hui Fangze Liu Sungho Kang Swastik Kar Matteo Rinaldi Department of Electrical and Computer Engineering Northeastern UniversityBostonMA 02115USA Department of Physics Northeastern UniversityBostonMA 02115USA Los Alamos National Laboratory Los AlamosNM 87545USA

The use of micro-/nanoelectromechanical resonators for the room temperature detection of electromagnetic radiation at infrared frequencies has recently been investigated,showing thermal detection capabilities that could potentially outperform conventional *** scaling of the device thickness in the nanometer range and the achievement of high infrared absorption in such a subwavelength thickness,without sacrificing the electromechanical performance,are the two key challenges for the implementation of fast,high-resolution micro-/nanoelectromechanical resonant infrared *** this paper,we show that by using a virtually massless,high-electrical-conductivity,and transparent graphene electrode,floating at the van der Waals separation of a few angstroms from a piezoelectric aluminum nitride nanoplate,it is possible to implement ultrathin(460 nm)piezoelectric nanomechanical resonant structures with improved electromechanical performance(450% improved frequency×quality factor)and infrared detection capabilities(4100×improved infrared absorptance)compared with metal-electrode counterparts,despite their reduced *** intrinsic infrared absorption capabilities of a submicron thin graphene–aluminum nitride plate backed with a metal electrode are investigated for the first time and exploited for the first experimental demonstration of a piezoelectric nanoelectromechanical resonant thermal detector with enhanced infrared absorptance in a reduced ***,the combination of electromagnetic and piezoelectric resonances provided by the same graphene–aluminum nitride-metal stack allows the proposed device to selectively detect short-wavelength infrared radiation(by tailoring the thickness of aluminum nitride)with unprecedented electromechanical performance and thermal *** attributes potentially lead to the development of uncooled infrared detectors suitable for the implementation of high performance,miniaturized and power-efficient mul

关键词： aluminum nitride graphene infrared detector MEMS NEMS piezoelectric resonant sensor

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Improvement of tunnel compensated quantum well infrared detector

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Journal of Semiconductors 2019年第12期40卷 142-145页

作者： Chaohui Li Jun Deng Weiye Sun Leilei He Jianjun Li Jun Han Yanli Shi Key Laboratory of Optoelectronics Technology Faculty of Information TechnologyBeijing University of TechnologyBeijing 100124China School of Physics&Astronomy Yunnan UniversityKunming 650091China

To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector(QWIP)with tunnel compensation structure,an improved structure is *** the new structure,the superlattices are located between the tunnel junction and the barrier as the infrared absorption region,eliminating the effect of doping concentration on the well width in the original *** analysis and experimental verification of the new structure are carried *** experimental sample is a two-cycle device,each cycle contains a tunnel junction,a superlattice infrared absorption region and a thick *** photosurface of the detector is 200×200μm^2 and the light is optically coupled by 45°oblique *** results show that the optimal operating voltage of the sample is-1.1 V,the dark current is 2.99×10^-8A,and the blackbody detectivity is1.352×10^8 cm·Hz^1/2·W^-1at 77 *** experiments show that the new structure can work normally.

关键词： infrared detector tunnel compensation superlattice

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On-orbit geometric calibration of satellite laser altimeters using infrared detectors and corner-cube retroreflectors

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International Journal of Digital Earth 2023年第1期16卷 2067-2088页

作者： Junfeng Xie Ren Liu Xiaomeng Yanga Fan Mo Fangxu Zhang Lirong Liu Land Satellite Remote Sensing Application Center Ministry of Natural ResourcesBeijingPeople’s Republic of China School of Earth Sciences and Engineering Hohai UniversityNanjingPeople’s Republic of China Faculty of Geography Yunnan Normal UniversityKunmingPeople’s Republic of China

After being launched into orbit,the geometric calibration of a satellite laser altimeter will reduce errors in laser pointing and ranging caused by satellite vibrations during launch,environmental changes,and thermal effects during long-term operation,which guarantees the accuracy of measurement *** this study,a satellite laser geometric calibration method combining infrared detectors and corner-cube retroreflectors(CCRs)is ***,a CCR-based laser ranging error calibration method was established,and then a laser pointing error calibration model was derived based on a single infrared detector *** GaoFen-7(GF-7)satellite laser beam 2 as the experimental object,laser geometric calibration was realized using an infrared detector and CCR-measured ***,the accuracy of the proposed method was compared with that of other calibration methods,the CMLID and the *** results show that the accuracy of the proposed calibration method is equivalent to that of the CMLID and higher than that of the *** them,the accuracy of the laser pointing after calibration using the proposed method is better than 0.8 arcsec,and the elevation accuracy of the laser on flat,sloping,and mountainous terrains is better than 0.11 m,0.30 m,and 1.80 m,respectively.

关键词： Satellite laser calibration infrared detector corner-cube retroreflector(CCR) GaoFen-7(GF-7)satellite accuracy verification

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High-performance midwavelength infrared detectors based on InAsSb nBn design

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Chinese Physics B 2020年第6期29卷 549-552页

作者：张璇贾庆轩孙矩蒋洞微王国伟徐应强牛智川 State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101408China Center of Materials Science and Optoelectronics Engineering College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China

we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandgap Al As0.08 Sb0.92 barrier layer in the n Bn detector, in which the depletion region of n Bn detector exists. The n Bn design has many advantages, such as low dark current and high quantum efficiency, because the n Bn design can suppress the generation–recombination(GR)current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0–1/T indicates the absence of the generation–recombination dark current. We fabricate an n Bn detector with a quantum efficiency(QE) maximum of ~ 60% under-0.2-V bias voltage. The In As Sb n Bn detectors may be a competitive candidate for midwavelength infrared detector.

关键词： infrared detector InAsSb nBn

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A compact polarization-integrated long wavelength infrared focal plane array based on In As/GaSb superlattice

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Science China(Information Sciences) 2022年第2期65卷 204-210页

作者： Jian ZHOU Yi ZHOU Ying SHI Fangfang WANG Zhicheng XU Zhizhong BAI Min HUANG Lulu ZHENG Zhaoming LIANG Yihong ZHU Qingqing XU Yiming SHEN Xiangxiao YING Jianxin CHEN Key Laboratory of infrared Imaging Materials and Devices Shanghai Institute of Technical PhysicsChinese Academy of Sciences Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences

Real-time polarization imaging plays a vital role in target detection, recognition, and tracking in complex scenes. However, large optical crosstalk and the integration technology are difficult problems in the development of polarization-integrated infrared detectors. We demonstrate a monolithic long wavelength infrared(LWIR) In As/Ga Sb superlattice focal plane array(FPA) integrated with the polarizer. To obtain high performance and real-time polarization imaging devices, the parameters of the grating were optimized and the optical crosstalk between adjacent polarization bands was studied. We analyze the light diffraction depending on the distance between the polarizer and photosensitive elements and the coupling between oblique incident light and device. The fabrication process of the antireflective polarizer, the integration technology of the polarizer and the FPA composed of 512×4×3 pixels were explored. Finally, a polarization integrated focal plane array(PI-FPA) was fabricated to detect polarized light with different oscillating directions. The large response extinction ratio of corresponding polarization bands was measured as 50:1,49:1, and 44:1 of 0?, 60?, and 120?, respectively.

关键词： LWIR polarization integration infrared detector optical crosstalk extinction ration

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Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices

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Journal of Semiconductors 2013年第11期34卷 74-78页

作者：王国伟向伟徐应强张亮彭振宇吕衍秋司俊杰王娟邢军亮任正伟牛智川 State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Luoyang Optical Electronics Development Center

We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 ***^1/2/W.

关键词： superlattices GaSb focal plane array infrared detector

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Room temperature quantum cascade detector operating at 4.3 μm

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Journal of Semiconductors 2014年第10期35卷 66-69页

作者：王雪娇刘俊岐翟慎强刘峰奇王占国 Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences

A strain-compensated InP-based InGaAs/lnAlAs quantum cascade detector grown by solid source molecular beam epitaxy is demonstrated. The device operates at 4.3 μm up to room temperature （300 K） with a responsivity of 1.27 mA/W and a Johnson noise limited detectivity of 1.02 × 10^7 cm-Hz1/2/W. At 80 K, the responsivity and detectivity are 14.55 mA/W and 1.26 ×10^***1/2/W, respectively. According to the response range, this detector is much suitable for greenhouse gas detection.

关键词： infrared detector quantum cascade molecular beam epitaxy

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