Molecular-beam epitaxy-grown HgCdTe infrared detector:Material physics, structure design, and device fabrication

作     者：Xiaohui Wang Mengbo Wang Yulong Liao Huaiwu Zhang Baohui Zhang Tianlong Wen Jiabao Yi Liang Qiao 

作者机构：State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu 611731China Yangtze Delta Region Institute(Huzhou)University of Electronic Science and Technology of ChinaHuzhou 313001China Kunming Institute of PhysicsKunming 650223China Global Innovative Centre for Advanced NanomaterialsSchool of EngineeringThe University of NewcastleCallaghan NSW 2308Australia School of PhysicsUniversity of Electronic Science and Technology of ChinaChengdu 611731China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2023年第66卷第3期

页      面：32-57页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.52072059,12274061,11774044,and 61971094) the Natural Science Foundation of Sichuan(Grant Nos.2022NSFSC0870,and2022NSFSC0485) the Foundation of Sichuan Excellent Young Talents(Grant No.2021JDJQ0015) the Fundamental Research Funds for the Central Universities(Grant No.ZYGX2020J023) 

主　　题：HgCdTe infrared detector MBE etch pit density 

摘      要：Infrared(IR) detectors have important applications in numerous civil and military sectors. Hg Cd Te is one of the most important materials for IR detector manufacture. This review systematically discusses the progress of Hg Cd Te materials grown via molecular-beam epitaxy(MBE) for IR detection in terms of material physics, structure design, and fabrication. The material physics of Hg Cd Te includes crystal information, band structure, and electrical and optical properties. The characterization methods of the As-grown Hg Cd Te materials are also summarized. Then, four design structures of Hg Cd Te for IR detectors, with multilayer, superlattice, double-layer heterojunction, and barrier properties, which significantly improve the device performance,are discussed. The third section summarizes the studies on Hg Cd Te MBE-grown on different substrates, including Cd Zn Te, Si,and Ga Sb, in recent decades. This review discusses the factors influencing the growth of the Hg Cd Te film and their relationships and optimal conditions. Finally, we present the prospects and challenges associated with the fabrication and applications of Hg Cd Te materials for IR detectors.