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Molecular-beam epitaxy-grown hgcdte infrared detector:Material physics, structure design, and device fabrication

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Science China(Physics,Mechanics & Astronomy) 2023年第3期66卷 32-57页

作者： Xiaohui Wang Mengbo Wang Yulong Liao Huaiwu Zhang Baohui Zhang Tianlong Wen Jiabao Yi Liang Qiao State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 611731China Yangtze Delta Region Institute(Huzhou) University of Electronic Science and Technology of ChinaHuzhou 313001China Kunming Institute of Physics Kunming 650223China Global Innovative Centre for Advanced Nanomaterials School of EngineeringThe University of NewcastleCallaghan NSW 2308Australia School of Physics University of Electronic Science and Technology of ChinaChengdu 611731China

Infrared(IR) detectors have important applications in numerous civil and military sectors. Hg Cd Te is one of the most important materials for IR detector manufacture. This review systematically discusses the progress of Hg Cd Te materials grown via molecular-beam epitaxy(MBE) for IR detection in terms of material physics, structure design, and fabrication. The material physics of Hg Cd Te includes crystal information, band structure, and electrical and optical properties. The characterization methods of the As-grown Hg Cd Te materials are also summarized. Then, four design structures of Hg Cd Te for IR detectors, with multilayer, superlattice, double-layer heterojunction, and barrier properties, which significantly improve the device performance,are discussed. The third section summarizes the studies on Hg Cd Te MBE-grown on different substrates, including Cd Zn Te, Si,and Ga Sb, in recent decades. This review discusses the factors influencing the growth of the Hg Cd Te film and their relationships and optimal conditions. Finally, we present the prospects and challenges associated with the fabrication and applications of Hg Cd Te materials for IR detectors.

关键词： hgcdte infrared detector MBE etch pit density

Mid-infrared plasmonic silicon quantum dot/hgcdte photodetector with ultrahigh specific detectivity

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Science China(Information Sciences) 2023年第4期66卷 286-292页

作者： Yueying CUI Zhouyu TONG Xinlei ZHANG Wenhui WANG Weiwei ZHAO Yuanfang YU Xiaodong PI Jialin ZHANG Zhenhua NI School of Physics and Key Laboratory of MEMS of Ministry of Education Southeast University State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University

Highly sensitive photodetectors operating at mid-infrared(MIR) wavelengths are urgently required for the applications of astronomy, optical communication, security monitoring, and so forth. However,further promoting the sensitivity in conventional MIR devices for a higher detectivity is challenging. Among the potential strategies, integrating localized surface plasmon resonance with MIR semiconductors is a promising approach to developing high-performance optoelectronics. Here we demonstrate a high-sensitivity boron(B)-doped silicon quantum dot(Si-QD)/hgcdte(MCT) MIR photodetector. Because of plasmon-induced hot-hole tunneling and enhanced light absorption, the hybrid photodetector exhibits a high specific detectivity of ～1.6×109cm·Hz1/2·W-1(Jones) and a high-speed response(～224 ns for the rise time and ～580 ns for the fall time) at room temperature. Furthermore, the device achieves high-performance spectral blackbody detection with a peak detectivity of up to 1.6×1011Jones at ～5.8 μm under a cryogenic environment of 77 K, higher than that of bare MCT. This prominent enhancement can be attributed to the further suppression of hot-hole cooling due to a reduced phonon population at low temperatures, which facilitates more efficient hot-carrier extraction and contributes to ultrahigh sensitivity. The plasmonic material-integrated MCT architecture can pave the way for developing high-performance MIR photodetection.

关键词： doped silicon quantum dots hgcdte localized surface plasmon resonance hot-hole tunneling mid-infrared photodetector

Crosstalk of hgcdte LWIR n-on-p diode arrays

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Journal of Semiconductors 2009年第9期30卷 49-52页

作者：孙英会张波于梅芳廖清君张燕文鑫姜偑璐胡晓宁戴宁 Shanghai Institute of Technical Physics Chinese Academy of Sciences

Crosstalk of hgcdte long-wavelength infrared （LWIR） n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, hgcdte diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area （optically sensitive area） is also measured and discussed.

关键词： crosstalk hgcdte n-on-p diode arrays scanning laser microscope

Influence of hydrogenation on the dark current mechanism of hgcdte photovoltaic detectors

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Journal of Semiconductors 2010年第3期31卷 116-118页

作者：乔辉胡伟达叶振华李向阳龚海梅 Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical PhysicsChinese Academy of Sciences National Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences

The influence of hydrogenation on the dark current mechanism ofhgcdte photovoltaic detectors is studied. The hydrogenation is achieved by exposing samples to a H2/Ar plasma atmosphere that was produced during a reactive ion etching process. A set of variable-area photomask was specially designed to evaluate the hydrogenation effect. It was found that the current-voltage characteristics were gradually improved when detectors were hydrogenated by different areas. The fitting results of experimental results at reverse bias conditions sustained that the improvement of current-voltage curves was due to the suppression of trap assisted tunneling current and the enhancement of minority lifetime in the depletion region. It was also found that the dominative forward current was gradually converted from a generation-recombination current to a diffusion current with the enlargement of the hydrogenation area, which was infered from the ideality factors by abstraction of forward resistance-voltage curves of different detectors.

关键词： hydrogenation passivation dark current photovoltaic detector hgcdte

DISPERSION RELATION AND LANDAU LEVELS OF INVERSION LAYER SUBBAND ON p-hgcdte

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Science China Mathematics 1990年第10期33卷 1192-1200页

作者：褚君浩 R.SIZMANN F.KOCH National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 PRC Physik-Department E-16 T. U. München D-8046 Garching F. R. Germany

Starting from Kane’s model and taking into account the surface electron spin-orbit interaction, we have derived the dispersion relation and Landau levels of inversion layer subband on narrow-gap semiconductors. The capacitance-voltage spectroscopy, magnetoconductivity oscillations and cyclotron resonance spectroscopy for the p-Hg1-xCdx Te MIS structure sample at temperature 4.2 K have been measured. From the experimental data, the subband parameters and spin-orbit coupling intensity, which are involved in the expressions of subband dispersion relation and Landau levels, have been determined. As a result, the inversion layer electron subband dispersion relation and Landau level fan chart for hgcdte as well as the zero field spin splitting effect, the shifting and the crossing effect of Landau levels have been described quantitatively.

关键词： narrow-gap semiconductors hgcdte 2-dimensional electron gas subband Landau level.

hgcdte长波光伏探测器的表面漏电流及1/f噪声研究

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物理学报 2005年第7期54卷 3357-3362页

作者：孙涛陈兴国胡晓宁李言谨中国科学院上海技术物理所功能材料器件中心上海200083

在同一Hg1-xCdxTe晶片上(x=0.217)制备了单层ZnS钝化和双层(CdTe+ZnS)钝化的两种器件,对器件烘烤前后的暗电流和1f噪声进行了测试,烘烤前发现,ZnS钝化的器件在反偏较大时具有较大的表面隧道电流,而这种表面漏电流是ZnS钝化器件具有较大1... 详细信息

在同一Hg1-xCdxTe晶片上(x=0.217)制备了单层ZnS钝化和双层(CdTe+ZnS)钝化的两种器件,对器件烘烤前后的暗电流和1f噪声进行了测试,烘烤前发现,ZnS钝化的器件在反偏较大时具有较大的表面隧道电流,而这种表面漏电流是ZnS钝化器件具有较大1f噪声电流的原因,通过高分辨x射线衍射中的倒易点阵技术(reciprocal spacemapping,RSM)研究了单双层钝化对hgcdte外延层晶格完整性的影响,发现单层ZnS钝化的hgcdte外延层产生了大量缺陷,而这些缺陷正是ZnS钝化器件具有较大表面漏电流和1f噪声的原因.经过高温烘烤后,ZnS钝化的器件暗电流和1f噪声增加,而双层钝化器件经过高温烘烤后性能提高.RSM的研究表明,高温烘烤后ZnS钝化的hgcdte外延层产生大量缺陷,这些缺陷正是单层钝化器件表面漏电流和1f噪声电流增加的原因.

关键词： hgcdte 表面漏电流光伏探测器噪声研究高分辨X射线衍射 mapping 1/f噪声长波高温烘烤噪声电流 ZnS space 1/f噪声外延层隧道电流倒易点阵暗电流钝化器件缺陷单层原因 RSM 晶片

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hgcdte薄膜的输运特性及其应力调控

物理学报 2020年第5期69卷 196-201页

作者：张松然何代华涂华垚孙艳康亭亭戴宁褚君浩俞国林上海理工大学材料科学与工程学院上海200093 中国科学院上海技术物理研究所红外物理国家重点实验室上海200083

窄禁带直接带隙半导体材料碲镉汞(Hg1–xCdxTe)是一种在红外探测与自旋轨道耦合效应基础研究方面都具有重要应用意义的材料.本文对单晶生长的体材料Hg0.851Cd0.149Te进行阳极氧化以形成表面反型层,将样品粘贴在压电陶瓷上减薄后进行磁... 详细信息

窄禁带直接带隙半导体材料碲镉汞(Hg1–xCdxTe)是一种在红外探测与自旋轨道耦合效应基础研究方面都具有重要应用意义的材料.本文对单晶生长的体材料Hg0.851Cd0.149Te进行阳极氧化以形成表面反型层,将样品粘贴在压电陶瓷上减薄后进行磁输运测试,在压电陶瓷未加电压时观察到了明显的SdH振荡效应.对填充因子与磁场倒数进行线性拟合,获得样品反型层二维电子气的载流子浓度为ns=1.25×10^16m^-2.在不同磁场下,利用压电陶瓷对样品进行应力调控,观测到具有不同特征的现象,分析应是样品中存在二维电子气与体材料两个导电通道.零磁场下体材料主导的电阻的变化应来源于应力导致的带隙的改变;而高场下产生类振荡现象的原因应为应力导致的二维电子气能级的分裂.

关键词： hgcdte Shubnikov-de Haas振荡压电陶瓷应力调控

hgcdte探测列阵干法技术的刻蚀形貌研究

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红外与毫米波学报 2006年第5期25卷 325-328页

作者：叶振华胡晓宁全知觉丁瑞军何力中国科学院上海技术物理研究所材料器件中心上海200083 中国科学院上海技术物理研究所红外物理国家重点实验室上海200083

首次报道了hgcdte微台面焦平面探测列阵成形工艺的干法刻蚀技术有关刻蚀形貌的一些研究结果.从hgcdte外延材料的特点出发,详细分析了其干法刻蚀适用的RIE(reactive ion etching)设备和刻蚀原理.采用高等离子体密度、低腔体工作压力、高... 详细信息

首次报道了hgcdte微台面焦平面探测列阵成形工艺的干法刻蚀技术有关刻蚀形貌的一些研究结果.从hgcdte外延材料的特点出发,详细分析了其干法刻蚀适用的RIE(reactive ion etching)设备和刻蚀原理.采用高等离子体密度、低腔体工作压力、高均匀性和低刻蚀能量的ICP(inductively coupled plasma)增强型RIE技术,研究了不同的工艺气体配比、腔体工作压力、ICP源功率和RF源功率对hgcdte材料刻蚀形貌的影响,并初步得到了一种稳定的、刻蚀表面清洁、光滑、图形轮廓良好、均匀性较好和刻蚀速率较高的干法刻蚀工艺.

关键词： hgcdte 微台面列阵干法刻蚀反应离子刻蚀刻蚀形貌

hgcdte光伏探测器在高温背景辐照下的I-V特性分析

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红外与毫米波学报 2006年第4期25卷 257-260页

作者：王晨飞李言谨中国科学院上海技术物理研究所上海200083

对中波hgcdte光伏探测器进行了不同目标温度范围的黑体辐射I-V测试研究,结果表明器件光电流随着目标辐射的升高逐渐上升,同时器件微分阻抗随之下降;在同一背景红外辐射下,器件微分阻抗随着反向偏压的增加而下降.采用“lucky electron”... 详细信息

对中波hgcdte光伏探测器进行了不同目标温度范围的黑体辐射I-V测试研究,结果表明器件光电流随着目标辐射的升高逐渐上升,同时器件微分阻抗随之下降;在同一背景红外辐射下,器件微分阻抗随着反向偏压的增加而下降.采用“lucky electron”模型对器件的R-V曲线进行了拟合,结果证实器件反偏微分电阻下降的主要原因是由于pn结耗尽区光生载流子的激增,碰撞电离导致的光电倍增效应所引起.

关键词： hgcdte 高温背景辐照碰撞离子化微分阻抗