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Chinese Physics B 2012年第12期21卷 526-530页

作者：杨倩倩赵谡玲徐征张福俊闫光孔超樊星张妍斐徐叙瑢 Key Laboratory of Luminescence and Optical Information(Beijing Jiaotong University) Ministry of Education Institute of Optoelectronics Technology Beijing Jiaotong University

The properties of poly（3-hexylthiophene）：（6,6）-phenyl C61 butyric acid methyl ester （P3HT：PCBM） organic pho- tovoltaic devices （OPVs） with an indium tin oxide （ITO） anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency （PCE） of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO4, and then the charge collection efficiency is improved.

关键词： organic photovoltaic devices indium tin oxide anode modification KMnO4

Work Function Enhancement of indium tin oxide via Oxygen Plasma Immersion Ion Implantation

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Plasma Science and Technology 2013年第8期15卷 791-793页

作者：高欢忠何龙何志江李泽斌吴忠航成卫海艾畦范晓轩区琼荣梁荣庆 Department of Illuminating Engineering and Light Sources Institute for Electric Light SourcesFudan University

indium tin oxide （ITO） transparent conducting film was treated with oxygen plasma immersion ion implantation （PIII）. X-ray photoelectron spectroscopy （XPS） was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.

关键词： plasma immersion ion implantation surface treatment work function indium tin oxide

Influence of Annealing Temperature on the Microstructure and Electrical Properties of indium tin oxide Thin Films

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Acta Metallurgica Sinica(English Letters) 2014年第2期27卷 368-372页

作者： Yinzhi Chen Hongchuan Jiang Shuwen Jiang Xingzhao Liu Wanli Zhang Qinyong Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China School of Material Science and Engineering Xihua University

indium tin oxide （ITO） thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering. The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 ℃ for 1 h. The influences of the annealing temperature on the microstructure and electrical properties of the ITO thin films were investigated, and the results indicate that the as-deposited ITO thin films are amorphous in nature. All samples were crystallized by annealing at 500 ~C. As the annealing temperature increases, the predominant orientation shifts from （222） to （400）. The carrier concentration decreases initially and then increases when the annealing temperature rises beyond 1,000 ℃. The resistivity of the ITO thin films increases smoothly as the annealing temperature increases to just below 900 ℃. Beyond 900 ℃, however, the resistivity of the films increases sharply. The annealing temperature has a significant effect on the stability of the ITO/Pt thin film thermocouples （TFTCs）. TFTCs annealed at 1,000 ℃ show improved high- temperature stability and Seebeck coefficients of up to 77.73 pV/℃.

关键词： indium tin oxide Thin film Annealing treatment

Gold nanoparticles attached NH^(2+) ion implantation-modified indium tin oxide electrode:Characterization and electrochemical studies

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Science China Chemistry 2012年第9期55卷 1940-1945页

作者： LI ShuoQi LIU Lu HU JingBo Key Laboratory of Beam Technology and Material Modification Ministry of Education Beijing Normal UniversityBeijing 100875China College of Chemistry Beijing Normal University Beijing 100875China College of Chemistry and Molecular Engineering Peking UniversityBeijing 100870China

An NH2+ ion implantation-modified indium tin oxide film was prepared and the implantation of amino groups on the indium tin oxide substrate was verified by X-ray photoelectron spectroscopy *** gold nanoparticles attached surface could be obtained by self-assembly of different sized colloidal gold nanoparticles onto the NH2+ ion implantation-modified indium tin oxide *** scanning electron microscopy and electrochemical techniques,the as-prepared AuNPs attached NH2+ ion implantation-modified indium tin oxide electrode was characterized and compared with bare indium tin oxide *** a [Fe(CN)6]3 /[Fe(CN)6]4 redox probe,the increasingly facile heterogeneous electron transfer kinetics resulting from the attached gold nanoparticle arrays was *** gold nanoparticle arrays exhibited high catalytic activity toward the electro-oxidation of nitric oxide,which could provide electroanalytical application for nitric oxide sensing.

关键词： ion implantation gold nanoparticles indium tin oxide amino groups electrode

Preparation of indium tin oxide Films on Polycarbonate substrates by Radio-frequency Magnetron Sputtering

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Journal of Wuhan University of Technology(Materials Science) 2005年第4期20卷 22-25页

作者：刘静 Glass Institute China Building Material Academy Beijing 100024 China

indium tin oxide（ITO）thin films（100±10nm）were deposited on PC（polycarbonate）and glass substrates by rf（radio-frequency）mannetron *** oxygen content of the ITO films was changed by variation of the sputtering gas *** the other deposition parameters were kept *** sheet *** transmittance and microstructure of ITO films were investigated using a four-point ***,X-ray diffractometer（XRD）and atomic force microscope（AFM）.Sheet resistances for the ITO films with optical transmittance more than 75% on PC substrates varied from 40Ω/cm^2 to more than 104 Ω/cm^2 with increasing oxygen partial pressure from O to about 2%.The same tendeney of sheet resistances increasing with increasing oxygen partial pressure was observed on glass *** X-ray diffraction data indicated polycrystalline filns with grain orientations predominantly along（440）and （422）*** intensities of （440）and （422）peaks increased slightly with the increase of oxygen partial pressure both on PC and glass *** AFM images show that the ITO films on PC substrates were dense and *** average grain size of the films was about 40nm.

关键词： indium tin oxide polycarbonate resistance optical transmittance radio-frequency magnetron sputtering

Work Function Optimization Technology of indium tin oxide Films

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Journal of Harbin Institute of Technology(New Series) 2021年第4期28卷 33-39页

作者： Bo Zhang Zhibo Zhang Xintao Guo Ya’nan Yang Ying Liu Lei Yang Jiaqi Zhu Department of Materials Research AVIC Manufacturing Technology InstituteBeijing 100024China National Key Laboratory of Science and Technology on Advanced Composite in Special Environments Harbin Institute of TechnologyHarbin 150001China Center of Analysis and Measurement Harbin Institute of TechnologyHarbin 150001China

indium tin oxide(In_(2)O_(3)∶Sn)film is one of the most potential materials in the field of semiconductor ***,untreated In2O3∶Sn film has a low work function which can result in a high energy barrier that hinders the passage of carriers through the interface,thus leading to poor overall performance of directly prepared *** this study,crystalline transparent conductive In_(2)O_(3)∶Sn films were prepared by plasma exposure assisted magnetron sputtering under room *** on multiple testing methods,it can be found that the low temperature crystallization characteristics of In_(2)O_(3)∶Sn film were enhanced and the work function was effectively improved after Ar^(+)plasma *** increase of the work function of In_(2)O_(3)∶Sn film was due to the increment of Sn⁃O bond on the surface brought by the transition from low oxidation state Sn^(2+)to high oxidation state Sn^(4+)under the action of high exposure.

关键词： work function indium tin oxide low temperature crystallization plasma exposure

Microstructure Study on Nano-phase Powder of indium tin oxide

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Rare Metals 1998年第1期17卷 51-55页

作者：高愈尊李永洪张泰宋北京有色金属研究总院北京

hemical co-precipitation method was used to prepare indium tin hydroxide. indium tin hydroxide has the structure of cubic crystal. The cubic crystal structure transformed to amorphous after heat treatment at 250℃ for 1 h. When the heat treatment temperature was higher than 280℃, the amorphous transformed to cubic crystal structure. After heat treatment at 600℃ for 1 h, the particle size of indium tin oxide is 8～20 nm. The weight ratio of In∶Sn is near 9∶1. Its granule has spherical shape. The dispersity is good.

关键词： Microstructure Nanophase powder indium tin oxide

indium tin oxide Films Prepared by Radio Frequency Magnetron Sputtering under Low Vacuum Level

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Indium Tin Oxide Films Prepared by Radio Frequency Magnetron...

Electrophoretic deposition of a supercapacitor electrode of activated carbon onto an indium-tin-oxide substrate using ethyl cellulose as a binder

2007亚洲显示国际会议

作者： X.D.Li H.B.Zhu J.B.Chu S.Y.Huang Z Sun Y.W.Chen S.M.Huang Engineering Research Center for Nanophotonics and Advanced Instrument,Ministry of Education,East China Normal University,North Zhongshan Rd.3663,Shanghai 200062,China,

We have prepared indium tin oxide(ITO)thin films using radio frequency(RF)magnetron sputtering and under a quite low vacuum level of 2.3×*** sputtering was done in an Ar and 02 gas mixture at a temperature of 200℃.A ceramic InO:SnO target(10 wt% SnO)was *** microstructures of the films were investigated by a field emission scanning electron microscope(FESEM)and an X-ray diffractometer(XRD).X-ray photoelectron spec- troscopy(XPS)was performed to characterize the compositions of the *** films with a high transparency in the visible wavelength range(80%-95%)were *** a low working pressure(1 Pa),the more highly transparent and conductive films were produced at the lower O flow *** a high working pressure(2 Pa),low quality,low transparency and amorphous films were obtained.

关键词： indium tin oxide Thin film Radio frequency magnetron sputtering X-ray photoelectron spectroscopy

来源： cnki会议评论

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Journal of Materials Science & Technology 2020年第23期58卷 188-196页

作者： Taeuk Kim Seong-Hoon Yi Sang-Eun Chun School of Materials Science and Engineering Kyungpook National UniversityDaegu 41566Republic of Korea

A transparent energy storage device is an essential component for transparent *** increasing demand for high-power devices stimulates the development of transparent supercapacitors with high power density.A transparent electrode for such supercapacitors can be assembled via the electrophoretic deposition of an active material powder with a binder onto a transparent *** properties of the binder critically influence the electrochemical behavior and performance of the resulting *** cellulose(EC)is known as an eco-friendly,transparent,flexible,and inexpensive ***,we fabricated an electrode film with EC binder via electrophoretic deposition on an indium tin oxide(ITO)substrate instead of using the conventional polytetrafluoroethylene(PTFE)*** assembled electrodes with EC and PTFE were compared to investigate the feasibility of EC as a binder from different perspectives,including homogeneity,wettability,electrochemical behavior,and mechanical *** EC enabled the formation of a homogeneous film composed of smaller particles and with a higher specific capacitance compared with films prepared with *** annealing improved the adhesion strength of the EC because of its glass transition;however,its hydrophobic nature limited utilization of the active material for charge *** electrochemical activation improved the wettability of the electrode,resulting in an increased capacitance of 60 F g^(-1).Furthermore,even with the lower wettability of EC compared with that of PTFE,better rate performance was possible with the EC *** increased mechanical stability after the annealing process ensured an excellent cycle life of 95%capacitance retention for 15,000 cycles.

关键词： Electrophoretic deposition Transparent electrode Activated carbon Ethyl cellulose indium tin oxide

Effects of Sn Concentration in indium tin oxide Back Contacts on the Device Performance of Cu(In1-xGax)Se2 Thin Film Solar Cells

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Effects of Sn Concentration in Indium Tin Oxide Back Contact...