Preparation of Indium Tin Oxide Films on Polycarbonate substrates by Radio-frequency Magnetron Sputtering

作     者：刘静 

作者机构：Glass Institute China Building Material Academy Beijing 100024 China 

出 版 物：《Journal of Wuhan University of Technology(Materials Science)》 (武汉理工大学学报（材料科学英文版）)

年 卷 期：2005年第20卷第4期

页      面：22-25页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

主　　题：indium tin oxide polycarbonate resistance optical transmittance radio-frequency magnetron sputtering 

摘      要：Indium tin oxide（ITO）thin films（100±10nm）were deposited on PC（polycarbonate）and glass substrates by rf（radio-frequency）mannetron *** oxygen content of the ITO films was changed by variation of the sputtering gas *** the other deposition parameters were kept *** sheet *** transmittance and microstructure of ITO films were investigated using a four-point ***,X-ray diffractometer（XRD）and atomic force microscope（AFM）.Sheet resistances for the ITO films with optical transmittance more than 75% on PC substrates varied from 40Ω/cm^2 to more than 104 Ω/cm^2 with increasing oxygen partial pressure from O to about 2%.The same tendeney of sheet resistances increasing with increasing oxygen partial pressure was observed on glass *** X-ray diffraction data indicated polycrystalline filns with grain orientations predominantly along（440）and （422）*** intensities of （440）and （422）peaks increased slightly with the increase of oxygen partial pressure both on PC and glass *** AFM images show that the ITO films on PC substrates were dense and *** average grain size of the films was about 40nm.