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Growth modulation of simultaneous epitaxy of ZnO obliquely aligned nanowire arrays and film on r-plane sapphire substrate

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Nano Research 2018年第7期11卷 3864-3876页

作者： Yongchun Xiao Yaoyao Tian Shujing sun Chenlong Chen Buguo Wang Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou 350002 China College of Materials Science and Engineering Fujian Normal University Fuzhou 350007 China wSemiconductor Research Center Wright State University Dayton OH45431 USA

Simultaneous epitaxial growth of film and nanowire array on a substrate is of both scientific significance and practical importance for nanoscale optoelectronics. Nevertheless, in situ building conducting connection between individually isolated nanowires grown on insulating substrates is still challenging. Herein, we demonstrate a novel and facile strategy for the simultaneous epitaxial growth of nonpolar a-plane ZnO film and obliquely aligned nanowire array on Au-coated r-plane sapphire substrate. The morphology, structure, components, and optical properties of the as-synthesized ZnO nanostructures were investigated using field-emission scanning electron microscopy X-ray diffraction, field-emission transmission electron microscopy energy-dispersive spectroscopy, X-ray photo- electron spectroscopy, and photoluminescence spectroscopy. A cooperative growth mechanism is proposed： Au-catalyzed vapor transport initiates the co-occurrence of nonpolar a-plane and polar c-plane ZnO nuclei, and subsequently, the non-upward directed Au catalyst helps the nonpolar a-plane ZnO nuclei develop into a ZnO conductive film at the bottom and zinc self-catalyzed vapor-liquid-solid growth helps the polar c-plane ZnO nuclei develop simultaneously into obliquely aligned nanowire arrays. The proposed strategy realized in situ synthesis of nanowires with conductive connection and it can benefit the application of ZnO nanowires in optoelectronics.

关键词： ZnO obliquely aligned nanowire arrays non-polar thin film epitaxy zinc self-catalyzed

Monolayer MoS_(2) epitaxy

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Nano Research 2021年第6期14卷 1598-1608页

作者： Zheng Wei Qinqin Wang Lu Li Rong Yang Guangyu Zhang Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing100190China Songshan Lake Materials Laboratory Dongguan523808China

As an emerging two-dimensional(2D)semiconductor material,monolayer MoS2 has recently attracted considerable *** promising applications of this material have been proposed for electronics,optoelectronics,sensing,catalysis,energy storage,and so *** realize these practical applications,high-quality and large-area MoS2 with controllable properties is *** the many different synthesis techniques,epitaxy provides a promising route for producing MoS2 ***,we review the epitaxial growth of monolayer MoS2 on various substrates,with a particular focus on large-scale films with large domain sizes and high domain ***,we offer perspectives and challenges for future research and applications of this technology.

关键词： monolayer MoS_(2) epitaxy domain size domain alignment heterostructures

Large-scale multiferroic complex oxide epitaxy with magnetically switched polarization enabled by solution processing

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National Science Review 2020年第1期7卷 84-91页

作者： Cong Liu Feng An Paria S.M.Gharavi Qinwen Lu Junkun Zha Chao Chen Liming Wang Xiaozhi Zhan Zedong Xu Yuan Zhang Ke Qu Junxiang Yao Yun Ou Zhiming Zhao Xiangli Zhong Dongwen Zhang Nagarajan Valanoor Lang Chen Tao Zhu Deyang Chen Xiaofang Zhai Peng Gao Tingting Jia Shuhong Xie Gaokuo Zhong Jiangyu Li Shenzhen Key Laboratory of Nanobiomechanics Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences School of Materials Science and Engineering Xiangtan University School of Materials Science and Engineering University of New South Wales Hefei National Laboratory for Physical Sciences at Microscale and Department of Chemical Physics University of Science and Technology of China Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology South China Academy of Advanced Optoelectronics South China Normal University Dongguan Neutron Science Center Department of Physics Southern University of Science and Technology International Center for Quantum Materials and Electron Microscopy Laboratory School of Physics Peking University Hunan Provincial Key Laboratory of Health Maintenance for Mechanical Equipment Hunan University of Science and Technology Department of Physics College of Science National University of Defense Technology Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Songshan Lake Materials Laboratory Dongguan Neutron Science Center

Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single-crystalline epitaxy for multiferroic（1-x）BiTi;/;Fe;Mg;/;O;–（x）CaTiO;（BTFM–CTO） solid solution in large area, confirming its ferroelectricity at the atomic scale with strong spontaneous polarization. Careful compositional tuning leads to a bulk magnetization of 0.07 ± 0.035 μB/Fe at room temperature, enabling magnetically induced polarization switching exhibiting a large magnetoelectric coefficient of 2.7–3.0 × 10;s/m. This work demonstrates the great potential of solution processing in large-scale complex oxide epitaxy and establishes novel room-temperature magnetoelectric coupling in epitaxial BTFM–CTO film, making it possible to explore a much wider space of composition,phase, and structure that can be easily scaled up for industrial applications.

关键词： complex oxide solution method epitaxy multiferroic

Atomic Force Microscopy Studies of Barium Titanate Thin Films Prepared by Laser Molecular Beam epitaxy

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Chinese Physics Letters 1997年第2期14卷 134-137页

作者： CUI Da-fu LU Hui-bin WANG Hui-sheng CHEN Zheng-hao ZHOU Yue-liang YANG Guo-zhen YANG Hai-tao TAO Hong-jie LI Lin Laboratory of Optical Physics Institute of Physics&Center for Condensed Matter PhysicsChinese Academy of SciencesBeijing 100080 National Laboratory for Superconductivity Institute of Physics&Center for Condensed Matter PhysicsChinese Academy of SciencesBeijing 100080

Laser molecular beam epitaxy(laser MBE)technique was utilized to grow the barium titanate(BaTiO_(3),BTO)thin films on SrTiO_(3)(100)*** surface morphology of the BaTiO_(3) thin films was studied by atomic force microscopy(AFM).Two-and three-dimensional AFM images were *** root mean square surface roughness,the height profile,the histogram and the bearing ratio of the height distributions for the BaTiO_(3) thin films were analyzed in *** results indicate that the laser MBE thin films exhibit an atomically smooth surface.

关键词： epitaxy roughness films

Damage Removal and Strain Relaxation in As^(+)-Implanted Si_(0.57)Ge_(0.43) Epilayers Grown by Gas Source Molecular Beam epitaxy

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Chinese Physics Letters 1997年第3期14卷 209-212页

作者： ZOU Lü-fan WANG Zhan-guo SUN Dian-zhao FAN Ti-wen LIU Xue-feng ZHANG Jing-wei Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083

The damage removal and strain relaxation in the As^(+)-implanted Si_(0.57)Ge_(0.43) epilayers were studied by double-crystal x-ray diffractornetry and transmission electron *** results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950℃ results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.

关键词： epitaxy damage relaxation

InAsP/InGaAsP Strained Microstructures Grown by Gas Source Molecular Beam epitaxy

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Chinese Physics Letters 2000年第6期17卷 435-437页

作者： CHEN Yi-Qiao CHEN Jian-Xin ZHANG Yong-Gang LI Ai-Zhen K.Frbjdh B.Stotz State Key Laboratory of Functional Materials for Informatics Shanghai Institute of MetallurgyChinese Academy of SciencesShanghai 200050 Ericsson Components AB Microelectronics DivisionOpto Electronic ProductsIsafjordsgatan 16KISTASE-16481 KISTA-STOCKHOLMSweden

Device quality InAsP/InGaAsP strained multiquantum-well(MQW)structures are successfully grown by using gas source molecular beam epitaxy *** grown MQW and InGaAsP quanternary alloy are characterized by using x-ray diffraction,room temperature photoluminescence measurements,confirming that optimum growth condition and high quality material have been obtained for device *** grown laser structures are processed into ridge waveguide lasers.A threshold current as low as 16mA at 250C for 300μm long device has been ***-dependent light-current measurement shows a characteristic temperature of75K.

关键词： InGaAsP waveguide epitaxy

Lateral Ordered InGaAs Self-organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam epitaxy

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Chinese Physics Letters 1999年第1期16卷 68-70页

作者： XU Huai-zhe JIANG Wei-hong XU Bo ZHOU Wei WANG Zhan-guo Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083

Self-assembled In_(x)Ga_(l-x)As quantum dots(QDs)on(311)and(100)GaAs surfaces have been grown by conventional solid source molecular beam *** ordering alignment of In_(x)Ga_(l-x)As QDs with lower In content around 0.3 has been observed on As-terminated(B type)*** direction of alignment orientation of the QDs formation differs from the direction of misorientation of the(311)B surface,and is strongly dependent upon the In content *** ordering alignment becomes significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on(100)and(311)Ga-terminated(A type)substrates.

关键词： epitaxy alignment

High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam epitaxy

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Chinese Physics Letters 2001年第5期18卷 659-661页

作者： PAN Zhong LI Lian-He DU Yun LIN Yao-Wang WU Rong-Han State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083

GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma *** of N into InGaAs decreases the bandgap *** highest N concentration of 2.6%in GaInNAs/GaAs QW is obtained,corresponding to the photoluminescence(PL)peak wavelength of 1.57μm at 10 *** PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N *** thermal annealing at 850℃ could significantly improve the crystal quality of the *** optimum annealing time of 5s at 850℃ was *** GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20℃-75℃.

关键词： GaInNAs/GaAs epitaxy Lasers

Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam epitaxy

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Chinese Physics Letters 2011年第6期28卷 308-311页

作者： SUI Yan-Ping YU Guang-Hui Department of Electronic Science and Technology College of Information Technical ScienceNankai UniversityTianjin 300071 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050

We investigate undoped GaN and Mg-doped GaN grown by rf plasma-assisted molecular beam epitaxy(MBE)with different Mg concentrations by photoluminescence(PL)at low temperature,Hall-effect and XRD *** the PL spectra of lightly Mg-doped GaN films,a low intensity near band edge(NBE)emission and strong donor-acceptor pair(DAP)emission with its phonon replicas are *** the Mg concentration is increased,the DAP and NBE bands become weaker and a red shift of these bands is observed in the PL *** luminescence(YL)is observed in heavily Mg-doped *** x-ray diffraction is employed to study the structure of the *** measurement shows that there is a maximum value(3.9×10^(18) cm^(−3))of hole concentration with increasing Mg source temperature for compensation *** spectra of undoped GaN are also studied under N-rich and Ga-rich growth *** luminescences of undoped Ga-rich GaN and heavily Mg-doped GaN are compared,indicating the different origins of the YL bands.

关键词： GaN epitaxy bands