InAsP/InGaAsP Strained Microstructures Grown by Gas Source Molecular Beam Epitaxy

作     者：CHEN Yi-Qiao CHEN Jian-Xin ZHANG Yong-Gang LI Ai-Zhen K.Frbjdh B.Stotz 陈意桥;陈建新;张永刚;李爱珍;K.Frojdh;B.Stotz

作者机构：State Key Laboratory of Functional Materials for InformaticsShanghai Institute of MetallurgyChinese Academy of SciencesShanghai 200050 Ericsson Components ABMicroelectronics DivisionOpto Electronic ProductsIsafjordsgatan 16KISTASE-16481 KISTA-STOCKHOLMSweden 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2000年第17卷第6期

页      面：435-437页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：Supported by the Key Project for Fundamental Study of Chinese Academy of Sciences under Grant No.KT951-B1-706-3 

主　　题：InGaAsP waveguide Epitaxy 

摘      要：Device quality InAsP/InGaAsP strained multiquantum-well(MQW)structures are successfully grown by using gas source molecular beam epitaxy *** grown MQW and InGaAsP quanternary alloy are characterized by using x-ray diffraction,room temperature photoluminescence measurements,confirming that optimum growth condition and high quality material have been obtained for device *** grown laser structures are processed into ridge waveguide lasers.A threshold current as low as 16mA at 250C for 300μm long device has been ***-dependent light-current measurement shows a characteristic temperature of75K.