Lateral Ordered InGaAs Self-organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy

作     者：XU Huai-zhe JIANG Wei-hong XU Bo ZHOU Wei WANG Zhan-guo 许怀哲;姜卫红;徐波;周伟;王占国

作者机构：Laboratory of Semiconductor Materials ScienceInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1999年第16卷第1期

页      面：68-70页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No.69736010 the National Advanced Materials Committee of China under Grant No.715-014-0040 

主　　题：Epitaxy alignment 

摘      要：Self-assembled In_(x)Ga_(l-x)As quantum dots(QDs)on(311)and(100)GaAs surfaces have been grown by conventional solid source molecular beam *** ordering alignment of In_(x)Ga_(l-x)As QDs with lower In content around 0.3 has been observed on As-terminated(B type)*** direction of alignment orientation of the QDs formation differs from the direction of misorientation of the(311)B surface,and is strongly dependent upon the In content *** ordering alignment becomes significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on(100)and(311)Ga-terminated(A type)substrates.