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Planarized Polymer Acceptor Featuring High electron mobility for Efficient All-Polymer Solar Cells

Chinese Journal of Polymer Science 2022年第8期40卷 968-978,I0011页

作者： Feng Liu Ri Sun Cheng-Yu Wang Liang Zhou Wen-Li Su Qi-Hui Yue Shuai Sun Wu-Yue Liu Hai-Jun Fan Wen-Kai Zhang Yun-Long Guo Li-Heng Feng Xiao-Zhang Zhu School of Chemistry and Chemical Engineering Shanxi UniversityTaiyuan030006China Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China Department of Physics and Applied Optics Beijing Area Major Laboratory Center for Advanced Quantum StudiesBeijing Normal UniversityBeijing100875China University of Chinese Academy of Sciences Beijing100049China

Significant progress has been achieved for all-polymer solar cells(APSCs)in the last few years by the use of polymerized small molecular acceptors(PSMAs).Developing high electron mobility polymer acceptors has been considered a feasible solution to further improve the photovoltaic performance of APSCs and fabricate thick film devices,which contributed to roll-to-roll printing *** this work,we designed and synthesized PSV,an A-DA’D-A small molecule acceptor-based PSMA with the vinyl group as a bridged linkage to reduce the steric hindrance between the 1,1-dicyanomethylene-3-indanone(IC)terminal *** comparison with the C-C bond linked polymer acceptor PS,PSV exhibits an almost planar conjugated framework and well-ordered molecular stacking in the thin ***,PSV exhibits superior n-type semiconducting properties with high electron mobility of up to 0.54 cm^(2)·V^(−1)·s^(−1),which is the highest value among reported *** utilizing PM6 as a polymer donor,PSV-based blend forms a favorable nanomorphology and exhibits high and well-balanced hole/electron mobilities,which is beneficial for exciton separation and charge ***,APSCs based on PM6:PSV achieved high power conversion efficiencies of up to 15.73%,with a simultaneously realized high Voc of 0.923 V,Jsc of 23.2 mA·cm^(-2),and FF of *** superior features enable PSV with excellent thickness-insensitive properties and over 13%PCE was obtained at 300 *** the best of our knowledge,the high PCE of 15.73%with excellent electron mobility of 0.54 cm^(2)·V^(−1)·s^(−1)is the highest values reported for *** results point to the great significance of developing polymer acceptors with a high electron mobility for boosting the performance of APSCs.

关键词： All-polymer solar cells Polymerized small molecular acceptors Planarization electron mobility Thick film organic solar cells

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Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn_(1-x)Cd_xSe strained heterojunction

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Chinese Physics B 2008年第12期17卷 4606-4613页

作者：白鲜萍班士良 Department of Physics School of Physical Science and Technology Inner Mongolia University

With a memory function approach, this paper investigates the electronic mobility parallel to the interface in a ZnSe/Zn1-xCdxSe strained heterojunction under hydrostatic pressure by considering the intersubband and intrasubband scattering from the optical phonon modes. A triangular potential approximation is adopted to simplify the potential of the conduction band bending in the channel side and the electronic penetrating into the barrier is considered by a finite interface potential in the adopted model. The numerical results with and without strain effect are compared and analysed. Meanwhile, the properties of electronic mobility under pressure versus temperature, Cd concentration and electronic density are also given and discussed, respectively. It shows that the strain effect lowers the mobility of electrons while the hydrostatic pressure effect is more obvious to decrease the mobility. The contribution induced by the longitudinal optical phonons in the channel side is dominant to decide the mobility. Compared with the intrasubband scattering it finds that the effect of intersubband scattering is also important for the studied material.

关键词： electron mobility ZnSe/Zn1-xCdxSe, strain, pressure effect

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Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures

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Chinese Physics B 2021年第9期30卷 451-455页

作者： Yao Li Hong-Bin Pu Department of electronic Engineering Xi'an University of TechnologyXi'an 710048China Key Laboratory of Wide Bandgap Semiconductor Materials Ministry of EducationXi'an 710071China Xi'an Key Laboratory of Power electronic Devices and High Efficiency Power Conversion Xi'an 710048China

To study the electron transport properties in InGaN channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back *** scattering mechanisms,such as dislocation impurity(DIS)scattering,polar optical phonon(POP)scattering,piezoelectric field(PE)scattering,interface roughness(IFR)scattering,deformation potential(DP)scattering,alloy disorder(ADO)scattering from InGaN channel layer,and temperature-dependent energy bandgaps are considered in the calculation model.A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure(DH)to the theoretical AlInGaN/AlN/InGaN single heterostructure(SH)is made and analyzed with a full range of barrier alloy *** effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al_(0.4)In_(0.07)Ga_(0.53)N ***,the temperature-dependent two-dimensional electron gas(2DEG)density and mobility in InGaN channel-based DH with Al_(0.83)In_(0.13)Ga_(0.04)N and Al_(0.4)In_(0.07)Ga_(0.53)N barrier are *** results are expected to conduce to the practical application of InGaN channel-based heterostructures.

关键词： scattering mechanism double heterostructures electron mobility InGaN channel

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Interface modulated electron mobility enhancement in core–shell nanowires

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Chinese Physics B 2022年第11期31卷 256-261页

作者： Yan He Hua-Kai Xu Gang Ouyang College of Science Guangdong University of Petrochemical TechnologyMaoming 525000China Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education Key Laboratory for Matter Microstructure and Function of Hunan ProvinceSchool of Physics and ElectronicsHunan Normal UniversityChangsha 410081China

The transport properties of core–shell nanowires(CSNWs)under interface modulation and confinement are investigated based on the atomic-bond-relaxation(ABR)correlation mechanism and Fermi’s golden *** analytical expression for the relationship between carrier mobility and interface mismatch strain is derived and the influence of size,shell thickness and alloyed layer on effective mass,band structures,and deformation potential constant are *** is found that interface modulation can not only reduce the lattice mismatch to optimize the band alignment,but also participate in the carrier transport for enhancing ***,the underlying mechanism regarding the interface shape dependence of transport properties in CSNWs is *** great enhancement of electron mobility suggests that the interface modulation may become a potential pathway to improving the performance of nanoelectronic devices.

关键词： core-shell nanowires interface modulated electron mobility

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Low-bandgap conjugated polymers based on benzodipyrrolidone with reliable unipolar electron mobility exceeding 1 cm^(2) V^(-1)s^(-1)

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Science China Chemistry 2021年第7期64卷 1219-1227页

作者： Mingqun Yang Tian Du Xuxia Zhao Xuelong Huang Langheng Pan Shuting Pang Haoran Tang Zhongxiang Peng Long Ye Yunfeng Deng Mingliang Sun Chunhui Duan Fei Huang Yong Cao School of Materials Science and Engineering Ocean University of ChinaQingdao 266100China Institute of Polymer Optoelectronic Materials and Devices State Key Laboratory of Luminescent Materials and DevicesSouth China University of TechnologyGuangzhou 510640China School of Materials Science and Engineering Tianjin UniversityTianjin 300350China College of Pharmacy Gannan Medical UniversityGanzhou 341000China State Key Laboratory of Fine Chemicals Dalian University of TechnologyDalian 116024China

The employment of an intrinsic quinoidal building block,benzodipyrrolidone(BDP),on constructing conjugated polymers(PBDP-2F and PBDP-2CN)with high electron mobility and unipolar transport characteristic in polyethylenimine ethoxylated(PEIE)modified organic field-effect transistors(OFETs)is *** intrinsic quinoidal characteristic and excellent coplanarity of BDP can lower the lowest unoccupied molecular orbital(LUMO)levels and improve ordered interchain packing of the resulting polymers in solid states,which are favorable for electron-injection and *** using PEIE as the interlayer to block the hole injection,unipolar n-type transport characteristics with high electron mobility of 0.58 and 1.01 cm^(2) V^(-1)s^(-1)were achieved by the OFETs based on PBDP-2F and PBDP-2CN,*** importantly,the extracted mobilities are highly reliable with the reliability factor of above 80%.To the best of our knowledge,PBDP-2CN is the very first quinoid-based conjugated polymer with reliable electron mobility exceeding 1 cm^(2) V^(-1)s^(-1).This work represents a significant step in exploring intrinsic quinoidal CPs for application in n-channel OFETs and logic complementary circuits.

关键词： field-effect transistors electron mobility conjugated polymers quinoidal structure benzodipyrrolidone

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Estimation of electron mobility of n-doped 4,7-diphenyl-1,10-phenanthroline using space-charge-limited currents

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Journal of Semiconductors 2009年第11期30卷 63-66页

作者：希扎尔.乌尔.哈克鲁富翰蒋雪茵张志林张小文张良李俊 School of Materials Science and Engineering Shanghai University Key Laboratories of Advanced Display and System Applications Ministry of EducationShanghai University

The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline （BPhen） doped 8-hydroxyquinolinatolithium （Liq） at various thicknesses （50-300 nm） have been estimated by using space-charge-limited current measurements. It is observed that the electron mobility of 33 wt% Liq doped BPhen approaches its true value when the thickness is more than 200 rim. The electron mobility of 33 wt% Liq doped BPhen at 300 nm is found to be -5.2 × 10^-3 cm^2/（V.s）（at 0.3 MV/cm） with weak dependence on electric field, which is about one order of magnitude higher than that of pristine BPhen （3.4 × 10^-4 cm^2/（V.s）） measured by SCLC. For the typical thickness of organic light-emitting devices, the electron mobility of doped BPhen is also investigated.

关键词： doping electron mobility SCLC 8-hydroxyquinolinonate-lithium (Liq)

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Phonon-Limited electron mobility in Single-Layer MoS2

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Chinese Physics Letters 2014年第2期31卷 101-104页

作者：曾琅辛争陈少闻杜刚康晋锋刘晓彦 Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 Yuanpei College Peking University Beijing 100871

The dynamics of electron transport in single-layer MoS2 is simulated by employing the single particle Monte Carlo method. Acoustic phonon scattering, optical phonon scattering and Frohlich scattering are taken into account. It is found that the electron mobility decreases from 806cm2 /V.s for a transverse electrical field of 103 Vim to 426/112 cm2 /V.s for a transverse electrical field of 105/107 Vim. Further detailed analysis on carrier dynamics reveals that the low field mobility is dominated by the acoustic phonon scattering while the role of optical phonon scattering is to relax the electron energy below the optical phonon energy by efficient energy relaxation through optical phonon emission. Only when the transverse electrical field is larger than 106 V/m, the mobility can be determined by the optical phonon scattering, leading to a strong mobility degradation.

关键词： electron mobility

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Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

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Journal of Semiconductors 2009年第10期30卷 10-12页

作者：赵建芝林兆军 Corrigan T D 张宇李惠军王占国 School of Physics Shandong University Department of Physics University of MarylandCollege ParkMaryland 20740USA School of Information Science and Engineering Shandong University Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of Sciences

The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas （2DEG） is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors （AlGaN/GaN HFETs）. Current-voltage （I-V） characteristics for ungated AlGaN/GaN heterostructures and capacitance-voltage （C-V） characteristics for AlGaN/GaN HFETs are obtained, and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated. It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50% compared with the electron mobility of Hall measurements. We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.

关键词： AlGaN/GaN heterostructure anneal ohmic contact metals 2DEG electron mobility

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High electron mobility fluorinated indacenodithiophene small molecule acceptors for organic solar cells

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Chinese Chemical Letters 2021年第3期32卷 1257-1262页

作者： Fei Pan Xiaojun Li Song Bai Tianhao Liu Xian Wei Yingfen Li Shanshan Chen Changduk Yang Xiwen Chen Menglan Lv Yongfang Li School of Chemical Engineering Guizhou Institute of TechnologyGuiyang 550003China Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing 100190China School of Chemical Science University of Chinese Academy of SciencesBeijing 100049China School of Chemistry and Chemical Engineering Guizhou UniversityGuiyang 550025China MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems CQU-NUS Renewable Energy Materials&Devices Joint LaboratorySchool of Energy&Power EngineeringChongqing UniversityChongqing 400044China Department of Energy Engineering School of Energy and Chemical EngineeringLow Dimensional Carbon Materials CenterUlsan National Institute of Science and Technology(UNIST)Ulsan 689-798South Korea Guangzhou Polyforte Chemical Technology Co.Ltd. Guangzhou 510520China

Indacenodithiophene(IDT)derivatives are kinds of the most representative and widely used cores of small molecule acceptors(SMAs)in organic solar cells(OSCs).Here we systematically investigate the influence of end-group fluo rination density and position on the photovoltaic properties of the IDT-based SMAs IDIC-nF(n=0,2,4).The absorption edge of IDIC-nF red-shifts with theπ-πstacking and crystallinity improvement,and their electronic energy levels downshift with increasing *** to the advantages of J_(sc)and FF as well as acceptable V_(oc),the difluorinated IDIC-2 F acceptor based OSCs achieve the highest power conversion efficiency(PCE)of 13%,better than the OSC devices based on IDIC and IDIC-4 F as *** the photovoltaic performance of the PTQ10:IDIC-2 F OSCs is insensitive to the active layer thickness:PCE still keep high values of 12.00%and 11.46%for the devices with active layer thickness of 80 and 354 nm,*** work verifies that fine and delicate modulation of the SMAs molecular structure could optimize photovoltaic performance of the corresponding ***,the thickness-insensitivity property of the OSCs has potential for large-scale and printable fabrication technology.

关键词： Organic solar cells Indacenodithiophene electron mobility Fluorination π-πStacking Crystallinity

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Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

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Chinese Physics B 2013年第6期22卷 518-521页

作者：吕元杰冯志红蔡树军敦少博刘波尹甲运张雄文房玉龙林兆军孟令国栾崇彪 Science and Technology on Application Specific Integrated Circuit Laboratory Hebei Semiconductor Research Institute School of Physics Shandong University

Using measured capacitance-voltage curves and current-voltage characteristics for the AlGaN/AlN/GaN heterostructure field-effect transistors with different gate lengths and drain-to-source distances, the influence of drain bias on the electron mobility is investigated. It is found that below the knee voltage the longitudinal optical （LO） phonon scattering and interface roughness scattering are dominant for the sample with a large ratio of gate length to drain-to-source distance （here 4/5）, and the polarization Coulomb field scattering is dominant for the sample with a small ratio （here 1/5）. However, the above polarization Coulomb field scattering is weakened in the sample with a small drain-to-source distance （here 20 μm） compared with the one with a large distance （here 100 μm）. This is due to the induced strain in the AlGaN layer caused by the drain bias.

关键词： AlGaN/GaN heterostructures electron mobility drain bias electron scattering

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