Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

作     者：赵建芝 林兆军 Corrigan T D 张宇 李惠军 王占国 

作者机构：School of PhysicsShandong University Department of PhysicsUniversity of MarylandCollege ParkMaryland 20740USA School of Information Science and EngineeringShandong University Key Laboratory of Semiconductor Materials ScienceInstitute of SemiconductorsChinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第10期

页      面：10-12页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China(No.10774090) the State Key Development Program for Basic Research of China(No.2007CB936602) 

主　　题：AlGaN/GaN heterostructure anneal ohmic contact metals 2DEG electron mobility 

摘      要：The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas （2DEG） is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors （AlGaN/GaN HFETs）. Current-voltage （I-V） characteristics for ungated AlGaN/GaN heterostructures and capacitance-voltage （C-V） characteristics for AlGaN/GaN HFETs are obtained, and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated. It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50% compared with the electron mobility of Hall measurements. We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.