Estimation of electron mobility of n-doped 4,7-diphenyl-1,10-phenanthroline using space-charge-limited currents

作     者：希扎尔.乌尔.哈克 鲁富翰 蒋雪茵 张志林 张小文 张良 李俊 

作者机构：School of Materials Science and EngineeringShanghai University Key Laboratories of Advanced Display and System ApplicationsMinistry of EducationShanghai University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第11期

页      面：63-66页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China (Nos.60477014,60577041,60776040,60777018) the National High Technology Research and Development Program of China (No.2008AA03A336) 

主　　题：doping electron mobility SCLC 8-hydroxyquinolinonate-lithium (Liq) 

摘      要：The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline （BPhen） doped 8-hydroxyquinolinatolithium （Liq） at various thicknesses （50-300 nm） have been estimated by using space-charge-limited current measurements. It is observed that the electron mobility of 33 wt% Liq doped BPhen approaches its true value when the thickness is more than 200 rim. The electron mobility of 33 wt% Liq doped BPhen at 300 nm is found to be -5.2 × 10^-3 cm^2/（V.s） （at 0.3 MV/cm） with weak dependence on electric field, which is about one order of magnitude higher than that of pristine BPhen （3.4 × 10^-4 cm^2/（V.s）） measured by SCLC. For the typical thickness of organic light-emitting devices, the electron mobility of doped BPhen is also investigated.