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Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

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Chinese Physics B 2015年第4期24卷 300-305页

作者：陈睿韩建伟郑汉生余永涛上官士鹏封国强马英起 National Space Science Center Chinese Academy of Sciences University of Chinese Academy of Sciences

By using the pulsed laser single event effect facility and electro-static discharge （ESD） test system, the characteristics of the ＂high current＂, relation with external stimulus and relevance to impacted modes of single event latch-up （SEL） and transient-induced latch-up （TLU） are studied, respectively, for a 12-bit complementary metal--oxide semiconductor （CMOS） analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between ＂high current＂ induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the ＂high current＂ induced by SEL and for that by TLU, However, for SEL, the minority carder diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node （the ground node） is the cause of the minority carrier diffusion for TLU.

关键词： single event latch-up transient-induced latch-up electro-static discharge pulsed laser

A novel ESD protection structure for output pads

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Journal of Semiconductors 2013年第11期34卷 95-98页

作者：樊航蒋苓利张波 State Key Laboratory of electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China

electro-static discharge （ESD） is always a serious threat to integrated circuits. To achieve higher robustness and a smaller die area at the same time, a novel protection structure for the output pad is proposed. The complementary SCR devices in this structure can protect not only the output under positive or negative stresses versus VDD or Vss, respectively, but also the power rails at the cost of almost no extra area. The robustness of the proposed structure is about three times higher than the conventional four-finger GGNMOS/GDPMOS structure in the same area condition.

关键词： electro-static discharge power clamp silicon controlled rectifier

A novel NLDMOS with a high ballast resistance for ESD protection

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Journal of Semiconductors 2014年第2期35卷 47-50页

作者：樊航张波 State Key Laboratory of electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China

To prevent the non-uniform conduction phenomenon caused by the Kirk effect in an NLDMOS under ESD stress, a novel NLDMOS structure is proposed. High electron injection current is the base of Kirk effect. Higher electron injection can makes the Kirk effect more serious and lead easily to the non-uniform conduction phenomenon. By splitting the drain N＋ with the field oxide in the proposed structure, the crowded current can lead to a higher voltage drop on the ballast resistance. Therefore, the non-uniform conduction is suppressed, and its failure current is much improved.

关键词： electro-static discharge ballast resistance LDMOS