A novel NLDMOS with a high ballast resistance for ESD protection

作     者：樊航 张波 

作者机构：State Key Laboratory of Electronic Thin Film and Integrated DevicesUniversity of Electronic Science and Technology of China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第2期

页      面：47-50页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the Important National S&T Special Project of China(No.2010ZX02201-003-002) 

主　　题：electro-static discharge ballast resistance LDMOS 

摘      要：To prevent the non-uniform conduction phenomenon caused by the Kirk effect in an NLDMOS under ESD stress, a novel NLDMOS structure is proposed. High electron injection current is the base of Kirk effect. Higher electron injection can makes the Kirk effect more serious and lead easily to the non-uniform conduction phenomenon. By splitting the drain N＋ with the field oxide in the proposed structure, the crowded current can lead to a higher voltage drop on the ballast resistance. Therefore, the non-uniform conduction is suppressed, and its failure current is much improved.