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Selective synthesis of three-dimensional ZnO@Ag/SiO2@Ag nanorod arrays as surface-enhanced Raman scattering substrates with tunable interior dielectric layer

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Chinese Physics B 2019年第12期28卷 165-169页

作者：牟佳佳何畅意孙伟杰管越 College of Science Beihua UniversityJilin 132013China Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences.Beijing 100083China

We describe the synthesis of three-dimensional(3D) multilayer ZnO@Ag/SiO2@Ag nanorod arrays by the physico–chemical method. The surface-enhanced Raman scattering(SERS) performance of the 3D multilayer Zn O@Ag/SiO2@Ag nanorod arrays is studied by varying the thickness of dielectric layer SiO2 and outer-layer noble Ag. The 3D Zn O@Ag/SiO2@Ag nanorod arrays create a huge number of SERS "hot spots" that mainly contribute to the high SERS sensitivity. The great enhancement of SERS results from the electron transfer between ZnO and Ag and different electromagnetic enhancements of Ag nanoparticles(NPs) with different thicknesses. Through the finite-difference time-domain(FDTD) theoretical simulation, the enhancement of SERS signal can be ascribed to a strong electric field enhancement produced in the 3D framework. The simplicity and generality of our method offer great advantages for further understanding the SERS mechanism induced by the surface plasmon resonance(SPR) effect.

关键词： ZnO multilayer composite structure surface-enhanced Raman scattering(SERS) dielectric layer electromagnetic field enhancement

维普期刊数据库

dielectric size optimization for high power density in large-scale triboelectric nanogenerators

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Nano Research 2024年第9期17卷 8455-8464页

作者： Abdulkerim Karabiber Ömer Dirik Feyyaz Koc Faruk Ozel Department of Electrical and Electronics Engineering Bingol UniversityBingol 12000Turkey Department of Metallurgical and Materials Engineering Karamanoglu Mehmetbey UniversityKaraman 70200Turkey

Triboelectric nanogenerators(TENGs)have emerged as a promising technology to harvest electrical energy from natural motions such as human movement,wind,and water *** TENGs show significant potential in small-scale applications,developing large-scale TENGs capable of generating high power remains a significant *** factors that can affect the performance of large-scale TENGs are being investigated to overcome this challenge,including the size and configuration of dielectric *** study optimizes dielectrics regarding surface area,thickness,and multicell configuration to improve harvested electrical power density in large-scale *** the studies,glass fiber was used as the positive dielectric,and multipurpose white silicone was used as the negative dielectric because of their high tribo-potential,durability,and easy *** the size optimization phase,dielectric thicknesses and surface areas that provide the maximum power density were ***,horizontal and vertical multicell configurations were examined to efficiently integrate size-optimized *** results reveal that large-scale TENGs with vertical multicell configurations can achieve high and usable energy density for *** findings provide valuable insight into the development of large-scale TENGs with advanced power generation capabilities.

关键词： triboelectric nanogenerator dielectric layer size optimization multi-cell structure high power density

Comparison of the RF MEMS switches with dielectric layers on the bridge’s lower surface and on the transmission line

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Science China(Information Sciences) 2011年第2期54卷 396-406页

作者： CHEN KenLe & ZHANG JinWen National Key Laboratory of Micro/Nano Fabrication Technology, Institute of Microelectronics, Peking University, Beijing 100871, China National Key Laboratory of Micro/Nano Fabrication Technology Institute of Microelectronics Peking University Beijing China

Previously, we proposed that the dielectric layer of RF MEMS switch can be fabricated either on the transmission line, as traditional switches, or on the lower surface of the bridge. This paper presents a detailed comparison of the RF MEMS switches with different positions of dielectric layer. Through theoretically analyzing the physical model of fringing capacitance, it is revealed that different positions of dielectric layer can result in different switch capacitances. Therefore, the change of dielectric-layer position can reduce the switch capacitance and insertion loss when the bridge is much wider than t-line. The theoretical analysis is demonstrated by Maxwell 3D and HFSS simulation, showing that the insertion loss is reduced by around 13% when the bridge width is three times of transmission line width. Further, the inffuence of switch’s structural parameters, such as dielectric material and dimensions of dielectric layer, on the differences between these two kinds of switches is discussed. To achieve high integration together with low-loss and low-actuation-voltage design, the novel switch with dielectric layer on bridge’s lower surface can be expected to have broad applications in the future.

关键词： RF MEMS switch insertion loss fringing capacitance dielectric layer

High-performance MoS_(2)/p^(+)-Si heterojunction field-effect transistors by interface modulation

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Nano Research 2022年第7期15卷 6500-6506页

作者： Yoonsok Kim Taeyoung Kim Eun Kyu Kim Department of Physics and Research Institute of Natural Science Hanyang UniversitySeoul 04763Republic of Korea

Molybdenum disulfide(MoS_(2)),one of transition metal dichalcogenides,is a promising semiconductor material for electronic or optoelectronic devices due to its favorably electronic ***,in metal-oxide semiconductor field-effect transistor(MOSFET)structures using MoS_(2),electrical performances such as mobility and subthreshold swing are suppressed by the interface trap density between the channel and dielectric ***,the electrical stability of such structures is compromised due to interface traps and that can be analyzed such as current hysteresis and transient ***,we demonstrate MoS_(2) heterojunction field-effect transistors(HFET)by applying MoS_(2)/p^(+)-Si heterojunctions and achieve high performance characteristics,including a mobility of 636.19 cm^(2)/(V∙s),a subthreshold swing of 67.4 mV/dec,minimal hysteresis of 0.05 V,and minimized transient ***,the HFET devices with varying the channel length demonstrated degradation of electrical performance with increasing the overlap area of the channel and dielectric *** results regarding MoS_(2)/p^(+)-Si HFETs resulted in the structural optimization of high-performance electronic devices for practical applications.

关键词： molybdenum disulfide(MoS_(2)) transition metal dichalcogenide junction field-effect transistor dielectric layer interface trap

Recent progress in flexible capacitive sensors:Structures and properties

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纳米材料科学:英文版 2023年第3期5卷 265-277页

作者： Zhuyu Ma Yang Zhang Kaiyi Zhang Hua Deng Qiang Fu College of Polymer Science and Engineering State Key Laboratory of Polymer Materials EngineeringSichuan UniversityChengdu610065China

The future intelligent era that will be brought about by 5G technology can be well *** example,the connection between humans and smart wearable devices will become increasingly more *** wearable pressure sensors have received much attention as a part of this ***,there is a lack of complete and detailed discussion on the recent research status of capacitive pressure sensors composed of polymer ***,this article will mainly discuss the key concepts,preparation methods and main performance of flexible wearable capacitive *** concept of a processing“toolbox”is used to review the developmental status of the dielectric layer as revealed in highly cited literature from the past five *** preparation methods are categorized into types of processing:primary and *** these categories,the preparation methods and structure of the dielectric layer are *** influence on the final capacitive sensing behavior is also *** developments in the electrode layer are also systematically ***,the results of the above discussion are summarized and future development trends are discussed.

关键词： Capacitive sensors dielectric layer Structures and properties Processing

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Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-layer Insulator

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Chinese Physics Letters 2007年第6期24卷 1664-1667页

作者：赵谊华董桂芳王立铎邱勇 Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education Department of Chemistry Tsinghua University Beijing 100084

We employ the Ta2Os/PVP （poly-4-vinylphenol） double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta205 insulator layers, the device with the Ta2Os/PVP doublelayer insulator exhibits an enhancement of the field-effect mobility from 0.21 to 0.54 cm2/Vs, and the decreasing threshold voltage from 4.38 V to -2.5 V. The results suggest that the Ta2Os/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.

关键词： FIELD-EFFECT TRANSISTORS dielectric layer GATE dielectricS MORPHOLOGY

Highly sensitive flexible capacitive pressure sensor with a broad linear response range and finite element analysis of micro-array electrode

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Journal of Materiomics 2020年第2期6卷 321-329页

作者： Longquan Ma Xuecheng Yu Yuanyuan Yang Yougen Hu Xinyu Zhang Huayuan Li Xing Ouyang Pengli Zhu Rong Sun Ching-ping Wong Shenzhen Institute of Advanced Electronic Materials Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen518005China School of Materials Science Shenzhen UniversityShenzhen518071China Shenzhen College of Advanced Technology University of Chinese Academy of SciencesShenzhen518055PR China School of Materials Science and Engineering Georgia Institute of TechnologyAtlantaUSA

With the continuous development of wearable electronics,health care and smart terminals,highly performance flexible pressure sensors present a huge application *** this study,by introducing the micro-array structured electrodes and dielectric layers with high dielectric constant,capacitive pressure sensor fabricated with a brand new preparation strategy and highly sensitive is *** prepared micro-array structure is the basis for sensors with high ***,the contact area between the two electrodes changes from linear to planar with the increased loading,which result in a wider linear responding *** addition,by introducing ceramic dielectric material-barium titanate(BT)fillers into the dielectric layer to increase it’s the dielectric constant,the sensitivity of the sensor shows two-fold ***,the sensitivity gradients can be tuned by changing the loading contents of BT ***,compared with parallel board capacitive sensors with ordinary dielectric layer,these sensors exhibit excellent performance as follow,high sensitivity(up to 4.9 kPa^(-1))under low pressure range(0-2500 Pa),low detection limit(<1.7 Pa),short response time(<50 ms),a stable response over 5000 loading-unloading cycles,bending stability and an adjustable ***,the flexible pressure sensor can detect the pressure of the water droplets and monitor human movement *** the facile design and excellent comprehensive properties,the flexible pressure sensor provides a new approach to improve the sensitivity and shows a broad application prospects in the wearable electronics,health care and smart terminals.

关键词： Pressure sensor Barium titanate dielectric layer Micro-array structure Tunable sensitivity