Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

作     者：赵谊华 董桂芳 王立铎 邱勇 

作者机构：Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education Department of Chemistry Tsinghua University Beijing 100084 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2007年第24卷第6期

页      面：1664-1667页

核心收录：

学科分类：07[理学] 070203[理学-原子与分子物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50573039  the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20060003085  and the National Key Basic Research Programme of China under Grant No 2002CB613405 

主　　题：FIELD-EFFECT TRANSISTORS DIELECTRIC LAYER GATE DIELECTRICS MORPHOLOGY 

摘      要：We employ the Ta2Os/PVP （poly-4-vinylphenol） double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta205 insulator layers, the device with the Ta2Os/PVP doublelayer insulator exhibits an enhancement of the field-effect mobility from 0.21 to 0.54 cm2/Vs, and the decreasing threshold voltage from 4.38 V to -2.5 V. The results suggest that the Ta2Os/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.